Patents by Inventor Philip Freiberger

Philip Freiberger has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5389581
    Abstract: A method of forming a device and the device itself that utilizes a high density plasma-enhanced TEOS-based intermetal dielectric is disclosed. The high density is accomplished though the use of higher RF power and higher oxygen flow rate so that the TEOS is more completely oxidized. The higher density intermetal dielectric absorbs water from air slower than a standard intermetal dielectric film. This lower water absorbance reduces the amount of water in the device and reduces hot electron induced device degradation.
    Type: Grant
    Filed: May 25, 1993
    Date of Patent: February 14, 1995
    Assignee: Intel Corporation
    Inventors: Philip Freiberger, Ragupathy V. Giridhar, Brett Huff, Farhad K. Moghadam