Abstract: A method of forming a layer, the method including providing a feedstock, the feedstock including a first component and a second component; ionizing at least part of the feedstock thereby forming a plasma, wherein the plasma includes constituents selected from: the first component, derivatives of the first component, ions of the first component, ions of derivatives of the first component, the second component, derivatives of the second component, ions of the second component, ions of derivatives of the second component, or combinations thereof, and wherein the individual identities, individual ratios, total quantities, or any combination thereof of the first and second component in the feedstock can modulate the makeup of the plasma; forming a beam from the plasma; and forming a layer from the beam, wherein the layer includes at least some portion of at least the first or the second component.

Abstract: A method of forming a layer, the method including providing a substrate having at least one surface adapted for forming a layer thereon; directing a particle beam towards the surface of the substrate, the particle beam including particles, wherein the particle beam has an angle of incidence with respect to the substrate, and is configured so that the particles have implant energies that are not greater than about 100 eV; changing the angle of incidence of the particle beam, the implant energy of the particles, or a combination thereof; and directing the particle beam towards the surface of the substrate a subsequent time, wherein the particles of the particle beam form a layer on the substrate.

Abstract: A method of forming a layer, the method including providing a substrate having at least one surface adapted for deposition thereon; and directing a particle beam towards the surface of the substrate, the particle beam including small molecule molecular species, wherein the small molecule molecular species break apart upon interaction with atoms at the substrate into atomic components, each of the atomic components having implant energies from about 20 eV to about 100 eV to form a layer.

Abstract: A method of forming a layer, the method including providing a substrate having at least one surface adapted for deposition thereon; and directing a particle beam towards the surface of the substrate, the particle beam including moderately charged ions (MCIs), substantially all the MCIs independently have charges from ±2 to ±6 and kinetic energies of not greater than about 200 eV, wherein the MCIs do not penetrate more than about 30 ? into the surface of the substrate to form a layer on the substrate.

Abstract: A method of forming a layer, the method including providing a substrate having at least one surface adapted for deposition thereon; providing a precursor ion beam, the precursor ion beam including ions; neutralizing at least a portion of the ions of the precursor ion beam to form a neutral particle beam, the neutral particle beam including neutral particles; and directing the neutral particle beam towards the surface of the substrate, wherein both the ions and the neutral particles have implant energies of not greater than 100 eV, and the neutral particles of the particle beam form a layer on the substrate.

Abstract: A method of forming a layer, the method including providing a feedstock, the feedstock including a first component and a second component; ionizing at least part of the feedstock thereby forming a plasma, wherein the plasma includes constituents selected from: the first component, derivatives of the first component, ions of the first component, ions of derivatives of the first component, the second component, derivatives of the second component, ions of the second component, ions of derivatives of the second component, or combinations thereof, and wherein the individual identities, individual ratios, total quantities, or any combination thereof of the first and second component in the feedstock can modulate the makeup of the plasma; forming a beam from the plasma; and forming a layer from the beam, wherein the layer includes at least some portion of at least the first or the second component.

Abstract: A system that includes an ion source, the ion source configured to produce ions having a first energy; an extractor to extract the ions; an accelerator configured to accelerate the ions; a focusing and steering device configured to focus and/or steer the accelerated ions; and a decelerator configured to decelerate the accelerated ions so that the ions have a second energy when they impact a substrate, wherein the second energy is less than the first energy.

Abstract: A method of forming a layer, the method including providing a substrate having at least one surface adapted for deposition thereon; and directing a particle beam towards the surface of the substrate, the particle beam including small molecule molecular species, wherein the small molecule molecular species break apart upon interaction with atoms at the substrate into atomic components, each of the atomic components having implant energies from about 20 eV to about 100 eV to form a layer.

Abstract: A method of forming a layer, the method including providing a substrate having at least one surface adapted for forming a layer thereon; directing a particle beam towards the surface of the substrate, the particle beam including particles, wherein the particle beam has an angle of incidence with respect to the substrate, and is configured so that the particles have implant energies that are not greater than about 100 eV; changing the angle of incidence of the particle beam, the implant energy of the particles, or a combination thereof; and directing the particle beam towards the surface of the substrate a subsequent time, wherein the particles of the particle beam form a layer on the substrate.

Abstract: Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode.

Abstract: Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode.

Abstract: Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode.

Abstract: Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode.

Abstract: Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode.

Abstract: A ferroelectric polarization pattern with differing feedback signals. An apparatus including a ferroelectric layer and a polarization pattern configured in the ferroelectric layer to represent position data. The polarization pattern has a first switchable polarization state domain and a second switchable polarization state domain that are both switchable by an applied signal. The first switchable polarization state domain has a first feedback signal in response to the applied signal that is different than a second feedback signal of the second switchable polarization state domain at the applied signal.

Abstract: A data storage medium that includes a multiferroic thin film and ferromagnetic storage domains formed in the multiferroic thin film. The multiferroic thin film may be formed of at least one of BiFeO3, or any other ferroelectric and antiferromagnetic material. The ferromagnetic storage domains may be formed in the multiferroic thin film by an ion implantation process. A data storage system that incorporates the data storage medium is also provided.

Abstract: Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode.

Abstract: An apparatus includes a ferroelectric layer and a polarization pattern configured in the ferroelectric layer to represent position data. The polarization pattern has a switchable polarization state domain and an unswitchable polarization state domain. A method includes providing a ferroelectric layer and establishing a polarization pattern in the ferroelectric layer to represent position data.

Abstract: A ferroelectric polarization pattern with differing feedback signals. An apparatus including a ferroelectric layer and a polarization pattern configured in the ferroelectric layer to represent position data. The polarization pattern has a first switchable polarization state domain and a second switchable polarization state domain that are both switchable by an applied signal. The first switchable polarization state domain has a first feedback signal in response to the applied signal that is different than a second feedback signal of the second switchable polarization state domain at the applied signal.

Abstract: A process and device for making sputtered films with a linear scanning magnetron, wherein sputtering employs directionally emitting targets and “ballistic” transport to achieve controlled angular dispersion of incident particles with respect to the normal of the substrate. Sputter films made by this process can exhibit a high degree of step coverage over sub-micron, high aspect ratio substrate features and can fill high aspect ratio substrate features, for example, channels or vias.