Patents by Inventor Philip Grigg

Philip Grigg has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integrated circuit device having sidewall spacers along conductors
    Patent number: 6717269
    Abstract: Two conductors of the same layer are separated by a low-K dielectric to minimize capacitance between them. The first and second conductors may have sidewalls with conductive barriers. The conductive barriers are separated from the low-K dielectric by spacers. The dielectric spacers have a top portion and a lower portion in which the top portion may have a higher dielectric constant than the lower portion or may be the same material. The two conductors are formed in trenches in a convenient dielectric. Prior to forming the conductors, the conductive barriers are deposited in the trench. After the conductors are formed, the convenient dielectric is removed. The dielectric spacers are formed adjacent to the conductive barriers. The low-K dielectric is then deposited adjacent to the dielectric spacers and not in contact with the conductive barriers.
    Type: Grant
    Filed: January 24, 2003
    Date of Patent: April 6, 2004
    Assignee: Motorola, Inc.
    Inventors: Mehul Shroff, Gerald G. Benard, Philip Grigg
  • Dielectric between metal structures and method therefor
    Publication number: 20030143832
    Abstract: Two conductors of the same layer are separated by a low-K dielectric to minimize capacitance between them. The first and second conductors may have sidewalls with conductive barriers. The conductive barriers are separated from the low-K dielectric by spacers. The dielectric spacers have a top portion and a lower portion in which the top portion may have a higher dielectric constant than the lower portion or may be the same material. The two conductors are formed in trenches in a convenient dielectric. Prior to forming the conductors, the conductive barriers are deposited in the trench. After the conductors are formed, the convenient dielectric is removed. The dielectric spacers are formed adjacent to the conductive barriers. The low-K dielectric is then deposited adjacent to the dielectric spacers and not in contact with the conductive barriers.
    Type: Application
    Filed: January 24, 2003
    Publication date: July 31, 2003
    Inventors: Mehul Shroff, Gerald G. Benard, Philip Grigg
  • Dielectric between metal structures and method therefor
    Patent number: 6583043
    Abstract: Two conductors of the same layer are separated by a low-K dielectric to minimize capacitance between them. The first and second conductors may have sidewalls with conductive barriers. The conductive barriers are separated from the low-K dielectric by spacers. The dielectric spacers have a top portion and a lower portion in which the top portion may have a higher dielectric constant than the lower portion or may be the same material. The two conductors are formed in trenches in a convenient dielectric. Prior to forming the conductors, the conductive barriers are deposited in the trench. After the conductors are formed, the convenient dielectric is removed. The dielectric spacers are formed adjacent to the conductive barriers. The low-K dielectric is then deposited adjacent to the dielectric spacers and not in contact with the conductive barriers.
    Type: Grant
    Filed: July 27, 2001
    Date of Patent: June 24, 2003
    Assignee: Motorola, Inc.
    Inventors: Mehul Shroff, Gerald G. Benard, Philip Grigg
  • Dielectric between metal structures and method therefor
    Publication number: 20030022483
    Abstract: Two conductors of the same layer are separated by a low-K dielectric to minimize capacitance between them. The first and second conductors may have sidewalls with conductive barriers. The conductive barriers are separated from the low-K dielectric by spacers. The dielectric spacers have a top portion and a lower portion in which the top portion may have a higher dielectric constant than the lower portion or may be the same material. The two conductors are formed in trenches in a convenient dielectric. Prior to forming the conductors, the conductive barriers are deposited in the trench. After the conductors are formed, the convenient dielectric is removed. The dielectric spacers are formed adjacent to the conductive barriers. The low-K dielectric is then deposited adjacent to the dielectric spacers and not in contact with the conductive barriers.
    Type: Application
    Filed: July 27, 2001
    Publication date: January 30, 2003
    Inventors: Mehul Shroff, Gerald G. Benard, Philip Grigg