Abstract: A CVD reactor includes a reactor housing, a susceptor that forms a floor of a process chamber, a gas inlet member with at least one gas inlet region, a heating device arranged under the susceptor for producing a difference in temperature between the main body of the susceptor and a ceiling of the process chamber, substrate carriers located at a distance from the gas inlet member in a direction of flow, and flow zone plates arranged between the gas inlet member and each of the substrate carriers. For each flow zone plate, a flow zone temperature of a surface of the flow zone plate which faces the process chamber can be set by respectively selecting or setting a heat transfer medium. For individually controlling each of the flow zone temperatures, the flow zone plates can be exchanged with other flow zone plates with different flow transfer properties.