Abstract: A lithographic method for producing high aspect ratio silica micro-structures having the steps of: providing a carrier substrate with a confinement boundary placed on the carrier substrate; placing the SOG material within the confinement boundary and soft baking at a temperature above its glass transition temperature; forming a pattern of interest on the soft baked SOG material by x-ray lithography; and heating the SOG material until it is substantially converted to a silica-like oxide.

Abstract: A method is disclosed for producing x-ray masks on graphite substrates inexpensively and rapidly. The method eliminates the need for an intermediate x-ray mask, instead using a less expensive intermediate UV lithography step. The absorber structures are electroplated directly onto the graphite. The capability to economically produce x-ray masks is expected to greatly enhance the commercial appeal of x-ray lithography in processes such as LIGA. The x-ray mask produced by this process comprises a graphite substrate that supports an absorber such as gold-on-nickel. The thickness of the absorber structures can be varied as needed to supply sufficient contrast for the particular application. A layer of a deep UV resist such as SU-8 is spin-coated directly onto a graphite substrate. The resist is then patterned with an UV mask using a UV radiation source.

Abstract: Apparatus and methods are disclosed for inspecting unsintered single or multiple layer ceramic specimens containing or carrying metal paste patterns of the type commonly used to ultimately form laminated multilayer ceramic (MLC) carriers for large scale integrated (LSI) chips. A relatively large surface area of an unsintered ceramic specimen (large in comparison with the minimum feature size of the paste patterns) is temporarily electrically contacted with a conforming electrode. The conforming electrode makes non-damaging electrical contact to any metallic paste exposed at the contacted area. Electric charge is either collected or delivered by this electrode, depending upon the mode of operation.

Abstract: The specification describes a mask structure comprising a resist pattern having a controlled line profile, for use in defining a predetermined region on and above a substrate. First, a composite electron-beam sensitive resist comprising a bottom layer of resist, a middle layer of a chosen conductive material, and a top layer of resist is formed on a selected substrate. The substrate with the composite resist is exposed to a beam of electrons to simultaneously define a predetermined pattern in the top and bottom layers of the resist. Next, a first chosen solvent is applied for a first predetermined period of time to develop the pattern in the top layer of resist, with the layer of conductive material protecting the bottom layer of resist from exposure to the first chosen solvent. Then, the portion of the conductive layer which is exposed after development of the top resist layer, is removed.

Abstract: The specification describes a process for defining a predetermined region on and above a substrate by using a resist pattern having a controlled line profile. First, a composite electron-beam sensitive resist comprising a bottom layer of resist, a middle layer of a chosen conductive material, and a top layer of resist is formed on a selected substrate. The substrate with the composite resist is exposed to a beam of electrons to simultaneously define a predetermined pattern in the top and bottom layers of the resist. Next, a first chosen solvent is applied for a first predetermined period of time to develop the pattern in the top layer of resist, with the layer of conductive material protecting the bottom layer of resist from exposure of the first chosen solvent. Then, the portion of the conductive layer which is exposed after development of the top resist layer, is removed.