Patents by Inventor Philip J. Elizondo

Philip J. Elizondo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Gate electrode formation method
    Patent number: 6217403
    Abstract: A method for forming a gate electrode. In one embodiment, the present invention comprises depositing a gate metal over an underlying substrate such that a layer of the gate metal is formed above the underlying substrate. In the present invention, the layer of the gate metal is deposited to a thickness approximately the same as the thickness desired for the gate electrode. Next, the present invention deposits polymer particles onto the layer of gate metal. A hard mask layer is then deposited over the polymer particles and the layer of the gate metal. The present invention removes the polymer particles and portions of the hard mask layer which overlie the polymer particles such that first regions of the layer of the gate metal are exposed, and such that second regions of the layer of the gate metal remain covered by the hard mask layer.
    Type: Grant
    Filed: October 21, 1999
    Date of Patent: April 17, 2001
    Assignee: Candescent Technologies Corporation
    Inventors: Kishore K. Chakravorty, Philip J. Elizondo
  • Spatially uniform deposition of polymer particles during gate electrode formation
    Patent number: 6095883
    Abstract: A method for uniformly depositing of polymer particles onto the surface of a gate metal during the formation of a gate electrode. In one embodiment, the present invention comprises immersing a substrate having a layer of a gate metal disposed over the surface thereof in a fluid bath containing polymer particles. In this embodiment, the fluid bath is contained within a fluid bath tank. Additionally, in the present embodiment, the layer of the gate metal disposed over the substrate has a thickness approximately the same as a desired thickness of the gate electrode to be formed. Next, the present embodiment applies a uniform potential across the surface of the layer of gate metal such that the polymer particles are uniformly deposited onto the layer of the gate metal. In so doing, the present embodiment uniformly deposits the polymer particles onto the layer of the gate metal.
    Type: Grant
    Filed: November 3, 1997
    Date of Patent: August 1, 2000
    Assignee: Candlescent Technologies Corporation
    Inventors: Philip J. Elizondo, Kishore K. Chakravorty, David Caudillo
  • Gate electrode formation method
    Patent number: 6039621
    Abstract: A method for forming a gate electrode. In one embodiment, the present invention comprises depositing a gate metal over an underlying substrate such that a layer of the gate metal is formed above the underlying substrate. In the present invention, the layer of the gate metal is deposited to a thickness approximately the same as the thickness desired for the gate electrode. Next, the present invention deposits polymer particles onto the layer of gate metal. A hard mask layer is then deposited over the polymer particles and the layer of the gate metal. The present invention removes the polymer particles and portions of the hard mask layer which overlie the polymer particles such that first regions of the layer of the gate metal are exposed, and such that second regions of the layer of the gate metal remain covered by the hard mask layer.
    Type: Grant
    Filed: July 7, 1997
    Date of Patent: March 21, 2000
    Assignee: Candescent Technologies Corporation
    Inventors: Kishore K. Chakravorty, Philip J. Elizondo