Patents by Inventor Philip Judge

Philip Judge has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Reduction of ALMS1 gene expression or inhibition of altröm protein to induce cardiomyocyte proliferation
    Patent number: 9040496
    Abstract: The present invention relates to the field of cardiology. More specifically, the present invention provides methods and compositions for inducing proliferation of cardiomyocytes. In a specific embodiment, a method for inducing proliferation of cardiomyocytes comprises the step of administering an effective amount of an ALMS1 inhibitor.
    Type: Grant
    Filed: November 26, 2013
    Date of Patent: May 26, 2015
    Assignee: The Johns Hopkins University
    Inventors: Daniel Philip Judge, Peter Andersen, Lincoln Takura Shenje
  • REDUCTION OF ALMS1 GENE EXPRESSION OR INHIBITION OF ALTROM PROTEIN TO INDUCE CARDIOMYOCYTE PROLIFERATION
    Publication number: 20140179763
    Abstract: The present invention relates to the field of cardiology. More specifically, the present invention provides methods and compositions for inducing proliferation of cardiomyocytes. In a specific embodiment, a method for inducing proliferation of cardiomyocytes comprises the step of administering an effective amount of an ALMS1 inhibitor.
    Type: Application
    Filed: November 26, 2013
    Publication date: June 26, 2014
    Applicant: The Johns Hopkins University
    Inventors: Daniel Philip Judge, Peter Andersen, Lincoln Takura Shenje
  • High resistivity thin film composition and fabrication method
    Patent number: 7609144
    Abstract: A thin film composition is made from silicon, an insulator such as alumina or silicon dioxide, and at least one additional material such as chromium, nickel, boron and/or carbon. These materials are combined to provide a thin film having a ? of at least 0.02 ?-cm (typically 0.02-1.0 ?-cm), and a TCR of less than ±1000 ppm/° C. (typically less than ±300 ppm/° C.). A sheet resistance of at least 20 k?/? may also be obtained. The resulting thin film is preferably at least 200 thick, to reduce surface scattering conduction currents.
    Type: Grant
    Filed: December 8, 2006
    Date of Patent: October 27, 2009
    Assignee: Analog Devices, Inc.
    Inventors: Michael Lee, Steven Wright, Philip Judge, Craig Wilson, Gregory Cestra, Derek Bowers
  • HIGH RESISTIVITY THIN FILM COMPOSITION AND FABRICATION METHOD
    Publication number: 20080136579
    Abstract: A thin film composition is made from silicon, an insulator such as alumina or silicon dioxide, and at least one additional material such as chromium, nickel, boron and/or carbon. These materials are combined to provide a thin film having a ? of at least 0.02 ?-cm (typically 0.02-1.0 ?-cm), and a TCR of less than ±1000 ppm/° C. (typically less than ±300 ppm/° C.). A sheet resistance of at least 20 k?/? may also be obtained. The resulting thin film is preferably at least 200 ? thick, to reduce surface scattering conduction currents.
    Type: Application
    Filed: December 8, 2006
    Publication date: June 12, 2008
    Inventors: Michael Lee, Steven Wright, Philip Judge, Craig Wilson, Gregory Cestra, Derek Bowers