Patents by Inventor Philip L. Trouilloud
Philip L. Trouilloud has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 10236438Abstract: A mechanism is provided for a thermally assisted magnetoresistive random access memory device (TAS-MRAM). A storage layer has an anisotropic axis, in which the storage layer is configured to store a state in off axis positions and on axis positions. The off axis positions are not aligned with the anisotropic axis. A tunnel barrier is disposed on top of the storage layer. A ferromagnetic sense layer is disposed on top of the tunnel barrier.Type: GrantFiled: July 18, 2017Date of Patent: March 19, 2019Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, CROCUS TECHNOLOGY SAInventors: Anthony J. Annunziata, Lucian Prejbeanu, Philip L. Trouilloud, Daniel C. Worledge
-
Patent number: 9917247Abstract: A mechanism is provided for fabricating a thermally assisted magnetoresistive random access memory device. A bottom thermal barrier is formed on a bottom contact. A magnetic tunnel junction is formed on the bottom thermal barrier. The magnetic tunnel junction includes a top ferromagnetic layer formed on a tunnel barrier. The tunnel barrier is formed on a bottom ferromagnetic layer. A top thermal barrier is formed on the top ferromagnetic layer. A top contact is formed on the top thermal barrier. The top contact is reduced to a first diameter. The tunnel barrier and the bottom ferromagnetic layer each have a second diameter. The first diameter of the top contact is smaller than the second diameter.Type: GrantFiled: November 9, 2016Date of Patent: March 13, 2018Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, CROCUS TECHNOLOGY SAInventors: Anthony J. Annunziata, Lucian Prejbeanu, Philip L. Trouilloud, Daniel C. Worledge
-
Publication number: 20170317270Abstract: A mechanism is provided for a thermally assisted magnetoresistive random access memory device (TAS-MRAM). A storage layer has an anisotropic axis, in which the storage layer is configured to store a state in off axis positions and on axis positions. The off axis positions are not aligned with the anisotropic axis. A tunnel barrier is disposed on top of the storage layer. A ferromagnetic sense layer is disposed on top of the tunnel barrier.Type: ApplicationFiled: July 18, 2017Publication date: November 2, 2017Inventors: Anthony J. Annunziata, Lucian Prejbeanu, Philip L. Trouilloud, Daniel C. Worledge
-
Patent number: 9786837Abstract: A mechanism is provided for a thermally assisted magnetoresistive random access memory device (TAS-MRAM). A storage layer has an anisotropic axis, in which the storage layer is configured to store a state in off axis positions and on axis positions. The off axis positions are not aligned with the anisotropic axis. A tunnel barrier is disposed on top of the storage layer. A ferromagnetic sense layer is disposed on top of the tunnel barrier.Type: GrantFiled: October 20, 2015Date of Patent: October 10, 2017Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, CROCUS TECHNOLOGY SAInventors: Anthony J. Annunziata, Lucian Prejbeanu, Philip L. Trouilloud, Daniel C. Worledge
-
Patent number: 9786836Abstract: A mechanism is provided for a thermally assisted magnetoresistive random access memory device (TAS-MRAM). A storage layer has an anisotropic axis, in which the storage layer is configured to store a state in off axis positions and on axis positions. The off axis positions are not aligned with the anisotropic axis. A tunnel barrier is disposed on top of the storage layer. A ferromagnetic sense layer is disposed on top of the tunnel barrier.Type: GrantFiled: October 20, 2015Date of Patent: October 10, 2017Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, CROCUS TECHNOLOGY SAInventors: Anthony J. Annunziata, Lucian Prejbeanu, Philip L. Trouilloud, Daniel C. Worledge
-
Patent number: 9705500Abstract: The present invention provides integrated circuit chips having chip identification aspects. The chips include magnetic tunnel junction (MTJ) structures, and more specifically, include permanent bit strings used for chip identification and/or authentication. Systems and processes for chip identification are also disclosed herein. The MTJ element structures provided herein can have a defined resistance profile such that the intrinsic variability of the MTJ element structure is used to encode and generate a bit string that becomes a fingerprint for the chip. In some embodiments, an oxygen treatment covering all or a selected portion of an array of MTJ elements can be used to create a mask or secret key that can be used and implemented to enhance chip identification.Type: GrantFiled: October 5, 2016Date of Patent: July 11, 2017Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Anthony J. Annunziata, Chandrasekharan Kothandaraman, Philip L. Trouilloud
-
Publication number: 20170170827Abstract: The present invention provides integrated circuit chips having chip identification aspects. The chips include magnetic tunnel junction (MTJ) structures, and more specifically, include permanent bit strings used for chip identification and/or authentication. Systems and processes for chip identification are also disclosed herein. The MTJ element structures provided herein can have a defined resistance profile such that the intrinsic variability of the MTJ element structure is used to encode and generate a bit string that becomes a fingerprint for the chip. In some embodiments, an oxygen treatment covering all or a selected portion of an array of MTJ elements can be used to create a mask or secret key that can be used and implemented to enhance chip identification.Type: ApplicationFiled: October 5, 2016Publication date: June 15, 2017Inventors: Anthony J. Annunziata, Chandrasekharan Kothandaraman, Philip L. Trouilloud
-
Publication number: 20170062701Abstract: A mechanism is provided for fabricating a thermally assisted magnetoresistive random access memory device. A bottom thermal barrier is formed on a bottom contact. A magnetic tunnel junction is formed on the bottom thermal barrier. The magnetic tunnel junction includes a top ferromagnetic layer formed on a tunnel barrier. The tunnel barrier is formed on a bottom ferromagnetic layer. A top thermal barrier is formed on the top ferromagnetic layer. A top contact is formed on the top thermal barrier. The top contact is reduced to a first diameter. The tunnel barrier and the bottom ferromagnetic layer each have a second diameter. The first diameter of the top contact is smaller than the second diameter.Type: ApplicationFiled: November 9, 2016Publication date: March 2, 2017Inventors: Anthony J. Annunziata, Lucian Prejbeanu, Philip L. Trouilloud, Daniel C. Worledge
-
Patent number: 9576634Abstract: The present invention provides integrated circuit chips having chip identification aspects. The chips include magnetic tunnel junction (MTJ) structures, and more specifically, include permanent bit strings used for chip identification and/or authentication. Systems and processes for chip identification are also disclosed herein. The MTJ element structures provided herein can have a defined resistance profile such that the intrinsic variability of the MTJ element structure is used to encode and generate a bit string that becomes a fingerprint for the chip. In some embodiments, an oxygen treatment covering all or a selected portion of an array of MTJ elements can be used to create a mask or secret key that can be used and implemented to enhance chip identification.Type: GrantFiled: May 27, 2016Date of Patent: February 21, 2017Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Anthony J. Annunziata, Chandrasekharan Kothandaraman, Philip L. Trouilloud
-
Patent number: 9569712Abstract: The present invention provides integrated circuit chips having chip identification aspects. The chips include magnetic tunnel junction (MTJ) structures, and more specifically, include permanent bit strings used for chip identification and/or authentication. Systems and processes for chip identification are also disclosed herein. The MTJ element structures provided herein can have a defined resistance profile such that the intrinsic variability of the MTJ element structure is used to encode and generate a bit string that becomes a fingerprint for the chip. In some embodiments, an oxygen treatment covering all or a selected portion of an array of MTJ elements can be used to create a mask or secret key that can be used and implemented to enhance chip identification.Type: GrantFiled: May 27, 2016Date of Patent: February 14, 2017Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Anthony J. Annunziata, Chandrasekharan Kothandaraman, Philip L. Trouilloud
-
Patent number: 9515251Abstract: A mechanism is provided for fabricating a thermally assisted magnetoresistive random access memory device. A bottom thermal barrier is formed on a bottom contact. A magnetic tunnel junction is formed on the bottom thermal barrier. The magnetic tunnel junction includes a top ferromagnetic layer formed on a tunnel barrier. The tunnel barrier is formed on a bottom ferromagnetic layer. A top thermal barrier is formed on the top ferromagnetic layer. A top contact is formed on the top thermal barrier. The top contact is reduced to a first diameter. The tunnel barrier and the bottom ferromagnetic layer each have a second diameter. The first diameter of the top contact is smaller than the second diameter.Type: GrantFiled: December 29, 2014Date of Patent: December 6, 2016Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, CROCUS TECHNOLOGY SAInventors: Anthony J. Annunziata, Lucian Prejbeanu, Philip L. Trouilloud, Daniel C. Worledge
-
Patent number: 9495627Abstract: The present invention provides integrated circuit chips having chip identification aspects. The chips include magnetic tunnel junction (MTJ) structures, and more specifically, include permanent bit strings used for chip identification and/or authentication. Systems and processes for chip identification are also disclosed herein. The MTJ element structures provided herein can have a defined resistance profile such that the intrinsic variability of the MTJ element structure is used to encode and generate a bit string that becomes a fingerprint for the chip. In some embodiments, an oxygen treatment covering all or a selected portion of an array of MTJ elements can be used to create a mask or secret key that can be used and implemented to enhance chip identification.Type: GrantFiled: December 15, 2015Date of Patent: November 15, 2016Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Anthony J. Annunziata, Chandrasekharan Kothandaraman, Philip L. Trouilloud
-
Publication number: 20160240773Abstract: A mechanism is provided for a thermally assisted magnetoresistive random access memory device (TAS-MRAM) with reduced power for reading and writing. A tunnel barrier is disposed adjacent to a ferromagnetic sense layer and a ferromagnetic storage layer, such that the tunnel barrier is sandwiched between the ferromagnetic sense layer and the ferromagnetic storage layer. An antiferromagnetic pinning layer is disposed adjacent to the ferromagnetic storage layer. The pinning layer pins a magnetic moment of the storage layer until heating is applied. The storage layer includes a non-magnetic material to reduce a storage layer magnetization as compared to not having the non-magnetic material. The sense layer includes the non-magnetic material to reduce a sense layer magnetization as compared to not having the non-magnetic material.Type: ApplicationFiled: April 28, 2016Publication date: August 18, 2016Inventors: Anthony J. Annunziata, Sebastien Bandiera, Lucien Lombard, Lucian Prejbeanu, Philip L. Trouilloud, Daniel C. Worledge
-
Patent number: 9406870Abstract: A mechanism is provided for a thermally assisted magnetoresistive random access memory device (TAS-MRAM). A storage layer has an anisotropic axis, in which the storage layer is configured to store a state in off axis positions and on axis positions. The off axis positions are not aligned with the anisotropic axis. A tunnel barrier is disposed on top of the storage layer. A ferromagnetic sense layer is disposed on top of the tunnel barrier.Type: GrantFiled: December 29, 2014Date of Patent: August 2, 2016Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, CROCUS TECHNOLOGY SAInventors: Anthony J. Annunziata, Lucian Prejbeanu, Philip L. Trouilloud, Daniel C. Worledge
-
Publication number: 20160043309Abstract: A mechanism is provided for a thermally assisted magnetoresistive random access memory device (TAS-MRAM). A storage layer has an anisotropic axis, in which the storage layer is configured to store a state in off axis positions and on axis positions. The off axis positions are not aligned with the anisotropic axis. A tunnel barrier is disposed on top of the storage layer. A ferromagnetic sense layer is disposed on top of the tunnel barrier.Type: ApplicationFiled: October 20, 2015Publication date: February 11, 2016Inventors: Anthony J. Annunziata, Lucian Prejbeanu, Philip L. Trouilloud, Daniel C. Worledge
-
Publication number: 20160043303Abstract: A mechanism is provided for a thermally assisted magnetoresistive random access memory device (TAS-MRAM). A storage layer has an anisotropic axis, in which the storage layer is configured to store a state in off axis positions and on axis positions. The off axis positions are not aligned with the anisotropic axis. A tunnel barrier is disposed on top of the storage layer. A ferromagnetic sense layer is disposed on top of the tunnel barrier.Type: ApplicationFiled: October 20, 2015Publication date: February 11, 2016Inventors: Anthony J. Annunziata, Lucian Prejbeanu, Philip L. Trouilloud, Daniel C. Worledge
-
Patent number: 9214625Abstract: A mechanism is provided for a thermally assisted magnetoresistive random access memory device (TAS-MRAM). A non-magnetic heating structure is formed of a barrier seed layer disposed on a buffer layer. A non-magnetic tunnel barrier is disposed on the barrier seed layer. A barrier cap layer is disposed on the non-magnetic tunnel barrier. A top buffer layer is disposed on the barrier cap layer. An antiferromagnetic layer is disposed on the top buffer layer of the non-magnetic heating structure. A magnetic tunnel junction is disposed on the antiferromagnetic layer. The magnetic tunnel junction includes a ferromagnetic storage layer disposed on the antiferromagnetic layer, a non-magnetic active tunnel barrier disposed on the ferromagnetic storage layer, and a ferromagnetic sense layer disposed on the non-magnetic active tunnel barrier.Type: GrantFiled: March 18, 2014Date of Patent: December 15, 2015Assignee: International Business Machines CorporationInventors: Anthony J. Annunziata, Philip L. Trouilloud, Daniel C. Worledge
-
Publication number: 20150294708Abstract: A mechanism is provided for a thermally assisted magnetoresistive random access memory device (TAS-MRAM). A storage layer has an anisotropic axis, in which the storage layer is configured to store a state in off axis positions and on axis positions. The off axis positions are not aligned with the anisotropic axis. A tunnel barrier is disposed on top of the storage layer. A ferromagnetic sense layer is disposed on top of the tunnel barrier.Type: ApplicationFiled: December 29, 2014Publication date: October 15, 2015Inventors: Anthony J. Annunziata, Lucian Prejbeanu, Philip L. Trouilloud, Daniel C. Worledge
-
Publication number: 20150295165Abstract: A mechanism is provided for fabricating a thermally assisted magnetoresistive random access memory device. A bottom thermal barrier is formed on a bottom contact. A magnetic tunnel junction is formed on the bottom thermal barrier. The magnetic tunnel junction includes a top ferromagnetic layer formed on a tunnel barrier. The tunnel barrier is formed on a bottom ferromagnetic layer. A top thermal barrier is formed on the top ferromagnetic layer. A top contact is formed on the top thermal barrier. The top contact is reduced to a first diameter. The tunnel barrier and the bottom ferromagnetic layer each have a second diameter. The first diameter of the top contact is smaller than the second diameter.Type: ApplicationFiled: December 29, 2014Publication date: October 15, 2015Inventors: Anthony J. Annunziata, Lucian Prejbeanu, Philip L. Trouilloud, Daniel C. Worledge
-
Publication number: 20150270478Abstract: A mechanism is provided for a thermally assisted magnetoresistive random access memory device (TAS-MRAM). A non-magnetic heating structure is formed of a barrier seed layer disposed on a buffer layer. A non-magnetic tunnel barrier is disposed on the barrier seed layer. A barrier cap layer is disposed on the non-magnetic tunnel barrier. A top buffer layer is disposed on the barrier cap layer. An antiferromagnetic layer is disposed on the top buffer layer of the non-magnetic heating structure. A magnetic tunnel junction is disposed on the antiferromagnetic layer. The magnetic tunnel junction includes a ferromagnetic storage layer disposed on the antiferromagnetic layer, a non-magnetic active tunnel barrier disposed on the ferromagnetic storage layer, and a ferromagnetic sense layer disposed on the non-magnetic active tunnel barrier.Type: ApplicationFiled: March 18, 2014Publication date: September 24, 2015Applicant: International Business Machines CorporationInventors: Anthony J. Annunziata, Philip L. Trouilloud, Daniel C. Worledge