Abstract: The present application provides a novel drug balloon catheter capable of controlling drug release, comprising a balloon, a catheter, and a drug coating, and wherein a surface of the balloon is coated with the drug coating, and the drug coating is divided into a first drug coating, a second drug coating, and a third drug coating; and release rates of a drug in the first drug coating, the second drug coating, and the third drug coating are different. By controlling a drug release period, a problem of a toxic reaction caused by a downstream blood vessel is solved, while the drug release period is prolonged, thereby effectively treating a blood vessel tear caused by over-dilation and improving a long-term effectiveness of a drug treatment.

Abstract: The present disclosure belongs to the field of medical preparations, and particularly relates to a drug coating for an expandable balloon catheter and a preparation method therefor. The present disclosure selects two amphiphilic auxiliary materials of phospholipid and PEG, an outer layer of the phospholipid prevents a coating from being washed away by blood in a delivery process of a balloon, is dissolved with a cell membrane to realize a residence of a drug at a target position, and improves biocompatibility, and the hydrophilic excipient PEG enables a drug coating surface and a balloon surface to form an easy-to-strip state, such that the drug coating surface is separated from the balloon surface, and a balance of adhesion and stripping is realized.

Abstract: The present disclosure belongs to the technical field of medicines, and specifically, relates to a core-shell micelle microsphere, and a preparation method therefor and use thereof. The core-shell micelle microsphere of the present disclosure has an outer layer shell composed of an amphiphilic lipid, an inner layer shell formed by a hydrophilic chain polymer, and a drug molecule inner core wrapped by a copolymer with a net structure. A drug may be effectively transported through the two-layer shell structure, such that a loss of the drug in a transportation process is reduced, and a utilization rate of the drug is improved. A slow release of the drug is realized by using a wrapped drug molecule as the inner core.

Abstract: The present invention relates to the field of medical instruments, more particularly to a pulse balloon and use thereof. The pulse balloon comprises a balloon body and an inner tube, wherein the balloon body comprises an insulating layer and a balloon wall. The insulating layer is arranged on the balloon body, when the balloon body operates, the balloon body is filled with an electrolyte so that an electrode releases high-pulse piezoelectricity to generate pulses, the electrolyte spreads to drive the vibration of the balloon, so that most of electrical energy is converted into mechanical energy to break down a calcified area of a blood vessel, and the residual high voltage is blocked by the insulating layer.

Abstract: A system and method comprising depositing a first layer on a substrate, in which the first layer comprises at least one of, a metal oxide and carbon based derivative, wherein the first layer is a gate electrode of a tag. Depositing a second layer, annealing said second layer, and treating a surface of the second layer, wherein the surface treatment is configured to enhance conductivity. Depositing a third layer, wherein the third layer is a gate dielectric of the tag. Depositing a fourth and a fifth layer. The fifth layer comprises at least an Indium Gallium Zinc Oxide layer and as a semiconductor layer of the tag. Photonic curing the fifth layer. Depositing a sixth and a seventh layer, in which the sixth layer is a source contact layer and said seventh layer is a drain contact layer of the tag.

Abstract: In one embodiment of the invention, video data is received in a buffer and parsed for a first and second start code to determine whether a complete video picture is present. After failing to identify the second start code, additional video data is added to the buffer and parsed beginning from a subsequent starting point, which is based on the first ending point.

Abstract: In one embodiment of the invention, video data is received in a buffer and parsed for a first and second start code to determine whether a complete video picture is present. After failing to identify the second start code, additional video data is added to the buffer and parsed beginning from a subsequent starting point, which is based on the first ending point.

Abstract: Methods are provided for forming a semiconductor device from a substrate comprising a bottom gate layer, a channel layer overlying the bottom gate layer, and a top gate structure formed over the channel layer. First, a hardmask comprising a first material interposed between a second material and a third material is deposited over a portion of the top gate structure. Then, the hardmask and top gate structure are encapsulated with an insulating material to form a spacer. A channel structure is formed from the channel layer, and the channel structure is disposed under the spacer. A bottom gate structure is formed from the bottom gate layer, and the bottom gate structure is disposed under the channel structure. Then, a source/drain contact is formed around the bottom gate structure.

Abstract: Methods are provided for forming a semiconductor device from a substrate comprising a bottom gate layer, a channel layer overlying the bottom gate layer, and a top gate structure formed over the channel layer. First, a hardmask comprising a first material interposed between a second material and a third material is deposited over a portion of the top gate structure. Then, the hardmask and top gate structure are encapsulated with an insulating material to form a spacer. A channel structure is formed from the channel layer, and the channel structure is disposed under the spacer. A bottom gate structure is formed from the bottom gate layer, and the bottom gate structure is disposed under the channel structure. Then, a source/drain contact is formed around the bottom gate structure.

Abstract: In one embodiment, a semiconductor device (500) includes a buffer layer (504) formed over a substrate (502). An AlxGa1-xAs layer (506) is formed over the buffer layer (504) and has a first doped region (508) formed therein. An InxGa1-xAs channel layer (512) is formed over the AlxGa1-xAs layer (506). An AlxGa1-xAs layer (518) is formed over the InxGa1-xAs channel layer (512), and the AlxGa1-xAs layer (518) has a second doped region formed therein. A GaAs layer (520) having a first recess is formed over the AlxGa1-xAs layer (518). A control electrode (526) is formed over the AlxGa1-xAs layer (518). A doped GaAs layer (524) is formed over the undoped GaAs layer (520) and on opposite sides of the control electrode (526) and provides first and second current electrodes. When used to amplify a digital modulation signal, the semiconductor device (500) maintains linear operation over a wide temperature range.

Abstract: A method and apparatus for decreasing contact resistance between a ohmic contact (120) and a semiconductor material (106) are disclosed. Increased contact resistance, which occurs as a result of encroachment of the ohmic contact (120) into the semiconductor material (106) is compensated for by notching edges of the ohmic contact (1210) to increase the effective surface area between abutting surfaces of the ohmic contact (120) and semiconductor material (106).

Abstract: A method and apparatus for decreasing contact resistance between a ohmic contact (120) and a semiconductor material (106) are disclosed. Increased contact resistance, which occurs as a result of encroachment of the ohmic contact (120) into the semiconductor material (106) is compensated for by notching edges of the ohmic contact (1210) to increase the effective surface area between abutting surfaces of the ohmic contact (120) and semiconductor material (106). The increase in surface area increases the effective transfer length of the contact, which correspondingly reduces contact resistance and improves device performance.