Abstract: A system and method comprising depositing a first layer on a substrate, in which the first layer comprises at least one of, a metal oxide and carbon based derivative, wherein the first layer is a gate electrode of a tag. Depositing a second layer, annealing said second layer, and treating a surface of the second layer, wherein the surface treatment is configured to enhance conductivity. Depositing a third layer, wherein the third layer is a gate dielectric of the tag. Depositing a fourth and a fifth layer. The fifth layer comprises at least an Indium Gallium Zinc Oxide layer and as a semiconductor layer of the tag. Photonic curing the fifth layer. Depositing a sixth and a seventh layer, in which the sixth layer is a source contact layer and said seventh layer is a drain contact layer of the tag.

Abstract: In one embodiment of the invention, video data is received in a buffer and parsed for a first and second start code to determine whether a complete video picture is present. After failing to identify the second start code, additional video data is added to the buffer and parsed beginning from a subsequent starting point, which is based on the first ending point.

Abstract: In one embodiment of the invention, video data is received in a buffer and parsed for a first and second start code to determine whether a complete video picture is present. After failing to identify the second start code, additional video data is added to the buffer and parsed beginning from a subsequent starting point, which is based on the first ending point.

Abstract: Methods are provided for forming a semiconductor device from a substrate comprising a bottom gate layer, a channel layer overlying the bottom gate layer, and a top gate structure formed over the channel layer. First, a hardmask comprising a first material interposed between a second material and a third material is deposited over a portion of the top gate structure. Then, the hardmask and top gate structure are encapsulated with an insulating material to form a spacer. A channel structure is formed from the channel layer, and the channel structure is disposed under the spacer. A bottom gate structure is formed from the bottom gate layer, and the bottom gate structure is disposed under the channel structure. Then, a source/drain contact is formed around the bottom gate structure.

Abstract: Methods are provided for forming a semiconductor device from a substrate comprising a bottom gate layer, a channel layer overlying the bottom gate layer, and a top gate structure formed over the channel layer. First, a hardmask comprising a first material interposed between a second material and a third material is deposited over a portion of the top gate structure. Then, the hardmask and top gate structure are encapsulated with an insulating material to form a spacer. A channel structure is formed from the channel layer, and the channel structure is disposed under the spacer. A bottom gate structure is formed from the bottom gate layer, and the bottom gate structure is disposed under the channel structure. Then, a source/drain contact is formed around the bottom gate structure.

Abstract: In one embodiment, a semiconductor device (500) includes a buffer layer (504) formed over a substrate (502). An AlxGa1-xAs layer (506) is formed over the buffer layer (504) and has a first doped region (508) formed therein. An InxGa1-xAs channel layer (512) is formed over the AlxGa1-xAs layer (506). An AlxGa1-xAs layer (518) is formed over the InxGa1-xAs channel layer (512), and the AlxGa1-xAs layer (518) has a second doped region formed therein. A GaAs layer (520) having a first recess is formed over the AlxGa1-xAs layer (518). A control electrode (526) is formed over the AlxGa1-xAs layer (518). A doped GaAs layer (524) is formed over the undoped GaAs layer (520) and on opposite sides of the control electrode (526) and provides first and second current electrodes. When used to amplify a digital modulation signal, the semiconductor device (500) maintains linear operation over a wide temperature range.