Patents by Inventor Philip Michael Antognetti

Philip Michael Antognetti has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • System and method of transistor switch biasing in a high power semiconductor switch
    Patent number: 8476961
    Abstract: A system and method are provided for biasing transistor switches in a semiconductor based high power switch. Off-state Vgsd biasing for the off transistor switches is based upon acceptable levels of spurious harmonic emissions and linearity.
    Type: Grant
    Filed: January 6, 2012
    Date of Patent: July 2, 2013
    Assignee: SiGe Semiconductor, Inc.
    Inventors: Chun-Wen Paul Huang, Mark Doherty, Philip Michael Antognetti
  • SYSTEM AND METHOD OF TRANSISTOR SWITCH BIASING IN A HIGH POWER SEMICONDUCTOR SWITCH
    Publication number: 20120202438
    Abstract: A system and method are provided for biasing transistor switches in a semiconductor based high power switch. Off-state Vgsd biasing for the off transistor switches is based upon acceptable levels of spurious harmonic emissions and linearity.
    Type: Application
    Filed: January 6, 2012
    Publication date: August 9, 2012
    Applicant: SKYWORKS SOLUTIONS, INC.
    Inventors: Chun-Wen Paul Huang, Mark Doherty, Philip Michael Antognetti
  • System and method of transistor switch biasing in a high power semiconductor switch
    Patent number: 8093940
    Abstract: A system and method are provided for biasing transistor switches in a semiconductor based high power switch. Off-state Vgsd biasing for the off transistor switches is based upon acceptable levels of spurious harmonic emissions and linearity.
    Type: Grant
    Filed: April 16, 2010
    Date of Patent: January 10, 2012
    Assignee: SiGe Semiconductor Inc.
    Inventors: Chun-Wen Paul Huang, Mark Doherty, Philip Michael Antognetti
  • System and Method of Transistor Switch Biasing in a High Power Semiconductor Switch
    Publication number: 20110254614
    Abstract: A system and method are provided for biasing transistor switches in a semiconductor based high power switch. Off-state Vgsd biasing for the off transistor switches is based upon acceptable levels of spurious harmonic emissions and linearity.
    Type: Application
    Filed: April 16, 2010
    Publication date: October 20, 2011
    Applicant: SiGe Semiconductor Inc.
    Inventors: Chun-Wen Paul Huang, Mark Doherty, Philip Michael Antognetti