Patents by Inventor Philip Milton Rice

Philip Milton Rice has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7116532
    Abstract: An exchange-coupled magnetic structure includes a ferromagnetic layer, a coercive ferrite layer, such as cobalt-ferrite, for biasing the magnetization of the ferromagnetic layer, and an oxide underlayer, such as cobalt-oxide, in proximity to the coercive ferrite layer. The oxide underlayer has a lattice structure of either rock salt or a spinel and exhibits no magnetic moment at room temperature. The underlayer affects the structure of the coercive ferrite layer and therefore its magnetic properties, providing increased coercivity and enhanced thermal stability. As a result, the coercive ferrite layer is thermally stable at much smaller thicknesses than without the underlayer. The exchange-coupled structure is used in spin valve and magnetic tunnel junction magnetoresistive sensors in read heads of magnetic disk drive systems. Because the coercive ferrite layer can be made as thin as 1 nm while remaining thermally stable, the sensor satisfies the narrow gap requirements of high recording density systems.
    Type: Grant
    Filed: November 9, 2004
    Date of Patent: October 3, 2006
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Matthew Joseph Carey, Eric Edward Fullerton, Bruce Alvin Gurney, Thai Le, Stefan Maat, Philip Milton Rice
  • Patent number: 6992866
    Abstract: An exchange-coupled magnetic structure includes a ferromagnetic layer, a coercive ferrite layer, such as cobalt-ferrite, for biasing the magnetization of the ferromagnetic layer, and an oxide underlayer, such as cobalt-oxide, in proximity to the coercive ferrite layer. The oxide underlayer has a lattice structure of either rock salt or a spinel and exhibits no magnetic moment at room temperature. The underlayer affects the structure of the coercive ferrite layer and therefore its magnetic properties, providing increased coercivity and enhanced thermal stability. As a result, the coercive ferrite layer is thermally stable at much smaller thicknesses than without the underlayer. The exchange-coupled structure is used in spin valve and magnetic tunnel junction magnetoresistive sensors in read heads of magnetic disk drive systems. Because the coercive ferrite layer can be made as thin as 1 nm while remaining thermally stable, the sensor satisfies the narrow gap requirements of high recording density systems.
    Type: Grant
    Filed: August 31, 2004
    Date of Patent: January 31, 2006
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Matthew Joseph Carey, Eric Edward Fullerton, Bruce Alvin Gurney, Thai Le, Stefan Maat, Philip Milton Rice
  • Patent number: 6928723
    Abstract: An exchange-coupled magnetic structure of a cobalt-ferrite layer adjacent a magnetic metal layer is used in magnetorestive sensors, such as spin valves or tunnel junction valves. The exchange-coupled magnetic structure is used in a pinning structure pinning the magnetization of a ferromagnetic pinned layer, or in an AP pinned layer. A low coercivity ferrite may be used in an AP free layer. Cobalt-ferrite layers may be formed by co-sputtering of Co and Fe in an oxygen/argon gas mixture, or by sputtering of a CoFe2 composition target in an oxygen/argon gas mixture. Alternatively, the cobalt-ferrite layer may be formed by evaporation of Co and Fe from an alloy source or separate sources along with a flux of oxygen atoms from a RF oxygen atom beam source. Magnetoresistive sensors including cobalt-ferrite layers have small read gaps and produce large signals with high efficiency.
    Type: Grant
    Filed: December 23, 2003
    Date of Patent: August 16, 2005
    Assignee: International Business Machines Corporation
    Inventors: Matthew Joseph Carey, Hoa Van Do, Robin Frederick Charles Farrow, Bruce Alvin Gurney, David Thomas Margulies, Ronald Franklin Marks, Philip Milton Rice, Ren Xu
  • Patent number: 6836392
    Abstract: An exchange-coupled magnetic structure includes a ferromagnetic layer, a coercive ferrite layer, such as cobalt-ferrite, for biasing the magnetization of the ferromagnetic layer, and an oxide underlayer, such as cobalt-oxide, in proximity to the coercive ferrite layer. The oxide underlayer has a lattice structure of either rock salt or a spinel and exhibits no magnetic moment at room temperature. The underlayer affects the structure of the coercive ferrite layer and therefore its magnetic properties, providing increased coercivity and enhanced thermal stability. As a result, the coercive ferrite layer is thermally stable at much smaller thicknesses than without the underlayer. The exchange-coupled structure is used in spin valve and magnetic tunnel junction magnetoresistive sensors in read heads of magnetic disk drive systems. Because the coercive ferrite layer can be made as thin as 1 nm while remaining thermally stable, the sensor satisfies the narrow gap requirements of high recording density systems.
    Type: Grant
    Filed: April 24, 2001
    Date of Patent: December 28, 2004
    Assignee: Hitachi Global Storage Technologies Netherlands, B.V.
    Inventors: Matthew Joseph Carey, Eric Edward Fullerton, Bruce Alvin Gurney, Thai Le, Stefan Maat, Philip Milton Rice
  • Publication number: 20040134060
    Abstract: An exchange-coupled magnetic structure of a cobalt-ferrite layer adjacent a magnetic metal layer is used in magnetorestive sensors, such as spin valves or tunnel junction valves. The exchange-coupled magnetic structure is used in a pinning structure pinning the magnetization of a ferromagnetic pinned layer, or in an AP pinned layer. A low coercivity ferrite may be used in an AP free layer. Cobalt-ferrite layers may be formed by co-sputtering of Co and Fe in an oxygen/argon gas mixture, or by sputtering of a CoFe2 composition target in an oxygen/argon gas mixture. Alternatively, the cobalt-ferrite layer may be formed by evaporation of Co and Fe from an alloy source or separate sources along with a flux of oxygen atoms from a RF oxygen atom beam source. Magnetoresistive sensors including cobalt-ferrite layers have small read gaps and produce large signals with high efficiency.
    Type: Application
    Filed: December 23, 2003
    Publication date: July 15, 2004
    Inventors: Matthew Joseph Carey, Hoa Van Do, Robin Frederick Charles Farrow, Bruce Alvin Gurney, David Thomas Margulies, Ronald Franklin Marks, Philip Milton Rice, Ren Xu
  • Patent number: 6721144
    Abstract: An exchange-coupled magnetic structure of a cobalt-ferrite layer adjacent a magnetic metal layer is used in magnetorestive sensors, such as spin valves or tunnel junction valves. The exchange-coupled magnetic structure is used in a pinning structure pinning the magnetization of a ferromagnetic pinned layer, or in an AP pinned layer. A low coercivity ferrite may be used in an AP free layer. Cobalt-ferrite layers may be formed by co-sputtering of Co and Fe in an oxygen/argon gas mixture, or by sputtering of a CoFe2 composition target in an oxygen/argon gas mixture. Alternatively, the cobalt-ferrite layer may be formed by evaporation of Co and Fe from an alloy source or separate sources along with a flux of oxygen atoms from a RF oxygen atom beam source. Magnetoresistive sensors including cobalt-ferrite layers have small read gaps and produce large signals with high efficiency.
    Type: Grant
    Filed: January 4, 2001
    Date of Patent: April 13, 2004
    Assignee: International Business Machines Corporation
    Inventors: Matthew Joseph Carey, Hoa Van Do, Robin Frederick Charles Farrow, Bruce Alvin Gurney, David Thomas Margulies, Ronald Franklin Marks, Philip Milton Rice, Ren Xu
  • Publication number: 20020154456
    Abstract: An exchange-coupled magnetic structure includes a ferromagnetic layer, a coercive ferrite layer, such as cobalt-ferrite, for biasing the magnetization of the ferromagnetic layer, and an oxide underlayer, such as cobalt-oxide, in proximity to the coercive ferrite layer. The oxide underlayer has a lattice structure of either rock salt or a spinel and exhibits no magnetic moment at room temperature. The underlayer affects the structure of the coercive ferrite layer and therefore its magnetic properties, providing increased coercivity and enhanced thermal stability. As a result, the coercive ferrite layer is thermally stable at much smaller thicknesses than without the underlayer. The exchange-coupled structure is used in spin valve and magnetic tunnel junction magnetoresistive sensors in read heads of magnetic disk drive systems. Because the coercive ferrite layer can be made as thin as 1 nm while remaining thermally stable, the sensor satisfies the narrow gap requirements of high recording density systems.
    Type: Application
    Filed: April 24, 2001
    Publication date: October 24, 2002
    Inventors: Matthew Joseph Carey, Eric Edward Fullerton, Bruce Alvin Gurney, Thai Le, Stefan Maat, Philip Milton Rice
  • Publication number: 20020085321
    Abstract: An exchange-coupled magnetic structure of a cobalt-ferrite layer adjacent a magnetic metal layer is used in magnetorestive sensors, such as spin valves or tunnel junction valves. The exchange-coupled magnetic structure is used in a pinning structure pinning the magnetization of a ferromagnetic pinned layer, or in an AP pinned layer. A low coercivity ferrite may be used in an AP free layer. Cobalt-ferrite layers may be formed by co-sputtering of Co and Fe in an oxygen/argon gas mixture, or by sputtering of a CoFe2 composition target in an oxygen/argon gas mixture. Alternatively, the cobalt-ferrite layer may be formed by evaporation of Co and Fe from an alloy source or separate sources along with a flux of oxygen atoms from a RF oxygen atom beam source. Magnetoresistive sensors including cobalt-ferrite layers have small read gaps and produce large signals with high efficiency.
    Type: Application
    Filed: January 4, 2001
    Publication date: July 4, 2002
    Inventors: Matthew Joseph Carey, Hoa Van Do, Robin Frederick Charles Farrow, Bruce Alvin Gurney, David Thomas Margulies, Ronald Franklin Marks, Philip Milton Rice, Ren Xu