Patents by Inventor Philip Ong
Philip Ong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20070235074Abstract: A photovoltaic cell device, e.g., solar cell, solar panel, and method of manufacture. The device has an optically transparent substrate comprises a first surface and a second surface. A first thickness of material (e.g., semiconductor material, single crystal material) having a first surface region and a second surface region is included. In a preferred embodiment, the surface region is overlying the first surface of the optically transparent substrate. The device has an optical coupling material provided between the first surface region of the thickness of material and the first surface of the optically transparent material. A second thickness of semiconductor material is overlying the second surface region to form a resulting thickness of semiconductor material.Type: ApplicationFiled: March 13, 2007Publication date: October 11, 2007Applicant: Silicon Genesis CorporationInventors: Francois Henley, Philip Ong
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Publication number: 20070232022Abstract: A method for fabricating bonded substrate structures, e.g., silicon on silicon. In a specific embodiment, the method includes providing a thickness of single crystal silicon material transferred from a first silicon substrate coupled to a second silicon substrate. In a specific embodiment, the second silicon substrate has a second surface region that is joined to a first surface region from the thickness of single crystal silicon material to form of an interface region having a first characteristic including a silicon oxide material between the thickness of single crystal silicon material and the second silicon substrate. The method includes subjecting the interface region to a thermal process to cause a change to the interface region from the first characteristic to a second characteristic.Type: ApplicationFiled: March 31, 2006Publication date: October 4, 2007Applicant: Silicon Genesis CorporationInventors: Francois Henley, James Sullivan, Sien Kang, Philip Ong, Harry Kirk, David Jacy, Igor Malik
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Publication number: 20070087531Abstract: Embodiments in accordance with the present invention relate to methods and apparatuses for bonding together substrates in a manner that suppresses the formation of voids between them. In a specific embodiment, a backside of each substrate is adhered to a front area of flexible, porous chuck having a rear area in pneumatic communication with a vacuum. Application of the vacuum causes the chuck and the associated substrate to slightly bend. Owing to this bending, physical contact between local portions on the front side of the flexed substrates may be initiated, while maintaining other portions on front side of the substrates substantially free from contact with each other. A bond wave is formed and maintained at a determined velocity to form a continuous interface joining the front sides of the substrates, without formation of voids therebetween.Type: ApplicationFiled: October 13, 2006Publication date: April 19, 2007Applicant: Silicon Genesis CorporationInventors: Harry Kirk, Francois Henley, Philip Ong
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Publication number: 20070051299Abstract: The present invention provides a method of forming a strained semiconductor layer. The method comprises growing a strained first semiconductor layer, having a graded dopant profile, on a wafer, having a first lattice constant. The dopant imparts a second lattice constant to the first semiconductor layer. The method further comprises growing a strained boxed second semiconductor layer having the second lattice constant on the first semiconductor layer and growing a sacrificial third semiconductor layer having the first lattice constant on the second semiconductor layer. The method further comprises etch annealing the third and second semiconductor layer, wherein the third semiconductor layer is removed and the second semiconductor layer is relaxed.Type: ApplicationFiled: November 7, 2006Publication date: March 8, 2007Applicant: Silicon Genesis CorporationInventors: Philip Ong, Francois Henley, Igor Malik
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Patent number: 7147709Abstract: The present invention provides a method of forming a strained semiconductor layer. The method comprises growing a strained first semiconductor layer, having a graded dopant profile, on a wafer, having a first lattice constant. The dopant imparts a second lattice constant to the first semiconductor layer. The method further comprises growing a strained boxed second semiconductor layer having the second lattice constant on the first semiconductor layer and growing a sacrificial third semiconductor layer having the first lattice constant on the second semiconductor layer. The method further comprises etch annealing the third and second semiconductor layer, wherein the third semiconductor layer is removed and the second semiconductor layer is relaxed.Type: GrantFiled: November 4, 2003Date of Patent: December 12, 2006Assignee: Silicon Genesis CorporationInventors: Philip Ong, Francois Henley, Igor Malik
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Publication number: 20060160329Abstract: A method for forming a strained layer of semiconductor material, e.g., silicon, germanium, Group III/V, silicon germanium alloy. The method includes providing a non-deformable surface region having a first predetermined radius of curvature, which is defined by R(1) and is defined normal to the surface region. The method includes providing a first substrate (e.g., silicon wafer) having a first thickness. Preferably, the first substrate has a face, a backside, and a cleave plane defined within the first thickness. The method includes a step of overlying the backside of the first substrate on a portion of the surface region having the predetermined radius of curvature to cause a first bend within the thickness of material to form a first strain within a portion of the first thickness. The method provides a second substrate having a second thickness, which has a face and a backside.Type: ApplicationFiled: March 17, 2006Publication date: July 20, 2006Applicant: Silicon Genesis CorporationInventors: Francois Henley, Philip Ong, Igor Malik, Harry Kirk
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Publication number: 20060024917Abstract: A method for forming a strained layer of semiconductor material, e.g., silicon, germanium, Group III/V, silicon germanium alloy. The method includes providing a non-deformable surface region having a first predetermined radius of curvature, which is defined by R(1) and is defined normal to the surface region. The method includes providing a first substrate (e.g., silicon wafer) having a first thickness. Preferably, the first substrate has a face, a backside, and a cleave plane defined within the first thickness. The method includes a step of overlying the backside of the first substrate on a portion of the surface region having the predetermined radius of curvature to cause a first bend within the thickness of material to form a first strain within a portion of the first thickness. The method provides a second substrate having a second thickness, which has a face and a backside.Type: ApplicationFiled: January 24, 2005Publication date: February 2, 2006Applicant: Silicon Genesis CorporationInventors: Francois Henley, Philip Ong, Igor Malik, Harry Kirk
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Publication number: 20050233545Abstract: A system for manufacturing multilayered substrates. The system has a support member is adapted to process a film of material comprising a first side and a second side from a first state to a second state. The support member is attached to the first side of the film of material. The second state comprises a stressed state. The system has a handle substrate comprising a face, which is adapted to be attached to the second side of the film of material. The support member is capable of being detached from the first side of the film of material thereby leaving the handle substrate comprising the film of material in the second state being attached to the face of the handle substrate.Type: ApplicationFiled: April 11, 2005Publication date: October 20, 2005Applicant: Silicon Genesis CorporationInventors: Francois Henley, Philip Ong, Igor Malik
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Publication number: 20050150597Abstract: An apparatus and method for controlled cleaving is presented. Embodiments of the present invention include an apparatus for cleaving a substrate comprising a bottom shell coupled to a hinge mechanism, a top shell coupled to the hinge mechanism, a plurality of o-rings or suction cups coupled to the top and bottom shells for providing a suction force sufficient to exert a tensile force to the top and bottom of a substrate, a compliant member for sealing a portion of a grove edge of a substrate and for maintaining a pressure inside a volume formed between the groove edge and the groove edge of the substrate, a gas port for supplying gas to the volume, and a height adjustment mechanism coupled to the top shell and the bottom shell for separating the top shell from the bottom shell.Type: ApplicationFiled: January 9, 2004Publication date: July 14, 2005Applicant: Silicon Genesis CorporationInventors: Francois Henley, Hongbee Teoh, Anthony Paler, Albert Lamm, Philip Ong