Abstract: Described are vapor deposition methods for depositing metal films or layers onto a substrate, wherein the metal is molybdenum or tungsten; the methods involve organometallic precursor compounds that contain the metal and one or more carbon-containing ligands, and include depositing a metal layer formed from the metal of the precursor, onto a substrate, followed by introducing oxidizer to the formed metal layer.

Abstract: Cobalt precursors are described, having application for vapor deposition of cobalt on substrates, such as in atomic layer deposition (ALD) and chemical vapor deposition (CVD) processes for forming interconnects, capping structures, and bulk cobalt conductors, in the manufacture of integrated circuitry and thin film products.

Abstract: Described are vapor deposition methods for depositing metal films or layers onto a substrate, wherein the metal is molybdenum or tungsten; the methods involve organometallic precursor compounds that contain the metal and one or more carbon-containing ligands, and include depositing a metal layer formed from the metal of the precursor, onto a substrate, followed by introducing oxidizer to the formed metal layer.

Abstract: In summary, the invention provides a process for depositing a silicon nitride film onto a microelectronic device substrate. The process utilizes precursors and co-reactants chosen from a halosilane compound, a compound of the formula R2NH, an amino-silane, and hydrogen. The silicon nitride films so formed have increased proportions of silicon, while providing uniform thickness films, i.e., high conformality, even in high aspect 3D NAND structures.

Abstract: Provided is a process comprising a selective ruthenium seed layer deposition with oxygen-free ruthenium precursors, followed by bulk deposition of metal-containing precursors such as tungsten, molybdenum, cobalt, ruthenium, and/or copper-containing precursors. The ruthenium seed layer deposition is highly selective for the conducting portions of the microelectronic device substrate while minimizing deposition onto the insulating surfaces of the microelectronic device substrate. In certain embodiments, the conducting portions of the substrate is chosen from titanium nitride, tungsten nitride, tantalum nitride, tungsten, cobalt, molybdenum, aluminum, and copper.

Abstract: Described are vapor deposition methods for depositing molybdenum materials onto a substrate by the use of bis(alkyl-arene) molybdenum, also referred to herein as (alkyl-arene)2Mo, for example bis(ethyl-benzene) molybdenum ((EtBz)2Mo), as a precursor for such deposition, as well as structures that contain the deposited material.

Abstract: Provided is a plasma enhanced atomic layer deposition (PEALD) process for depositing etch-resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatments containing O2 and NH3 co-reactants. This PEALD process relies on one or more precursors reacting in tandem with the plasma exposure to deposit the etch-resistant thin-films of SiOCN. The films display excellent resistance to wet etching with dilute aqueous HF solutions, both after deposition and after post-deposition plasma treatment(s). Accordingly, these films are expected to display excellent stability towards post-deposition fabrication steps utilized during device manufacturing and build.

Abstract: Described are vapor deposition methods for depositing molybdenum materials onto a substrate by the use of bis(alkyl-arene) molybdenum, also referred to herein as (alkyl-arene)2Mo, for example bis(ethyl-benzene) molybdenum ((EtBz)2Mo), as a precursor for such deposition, as well as structures that contain the deposited material.

Abstract: A process for forming cobalt on a substrate, comprising: volatilizing a cobalt precursor of the disclosure, to form, a precursor vapor: and contacting the precursor vapor with the substrate under vapor deposition conditions effective for depositing cobalt on the substrate from the precursor vapor, wherein the vapor deposition conditions include temperature not exceeding 200° C., wherein: the substrate includes copper surface and dielectric material, e.g., ultra-low dielectric material. Such cobalt deposition process can be used to manufacture product articles in which the deposited cobalt forms a capping layer, encapsulating layer, electrode, diffusion layer, or seed for electroplating of metal thereon, e.g., a semiconductor device, flat-panel, display, or solar panel. A cleaning composition containing base and oxidizing agent components may be employed to clean the copper prior to deposition of cobalt thereon, to achieve substantially reduced defects in the deposited cobalt.

Abstract: Provided is a plasma enhanced atomic layer deposition (PEALD) process for depositing etch-resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatments containing O2 and NH3 co-reactants. This PEALD process relies on one or more precursors reacting in tandem with the plasma exposure to deposit the etch-resistant thin-films of SiOCN. The films display excellent resistance to wet etching with dilute aqueous HF solutions, both after deposition and after post-deposition plasma treatment(s). Accordingly, these films are expected to display excellent stability towards post-deposition fabrication steps utilized during device manufacturing and build.

Abstract: Chemical vapor deposition (CVD) processes which use a ruthenium precursor of formula R1R2Ru(0), wherein R1 is an aryl group-containing ligand, and R2 is a diene group-containing ligand and a reducing gas a described. The CVD can include oxygen after an initial deposition period using the ruthenium precursor and reducing gas. The method can provide selective Ru deposition on conductive materials while minimizing deposition on non-conductive or less conductive materials. Further, the subsequent use of oxygen can significantly improve deposition rate while minimizing or eliminating oxidative damage of the substrate material. The method can be used to form Ru-containing layers on integrated circuits and other microelectronic devices.

Abstract: The invention provides a PEALD process to deposit etch resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatments containing O2 co-reactant. In one embodiment, this PEALD process relies on a single precursor—a bis(dialkylamino)tetraalkyldisiloxane, together with hydrogen plasma to deposit the etch-resistant thin-films of SiOCN. Since the film can be deposited with a single precursor, the overall process exhibits improved throughput.

Abstract: Chemical vapor deposition (CVD) processes which use a ruthenium precursor of formula R1R2Ru(0), wherein R1 is an aryl group-containing ligand, and R2 is a diene group-containing ligand and a reducing gas a described. The CVD can include oxygen after an initial deposition period using the ruthenium precursor and reducing gas. The method can provide selective Ru deposition on conductive materials while minimizing deposition on non-conductive or less conductive materials. Further, the subsequent use of oxygen can significantly improve deposition rate while minimizing or eliminating oxidative damage of the substrate material. The method can be used to form Ru-containing layers on integrated circuits and other microelectronic devices.

Abstract: Provided are certain silicon precursor compounds which are useful in the formation of silicon-containing films in the manufacture of semiconductor devices, and more specifically to compositions and methods for forming such silicon-containing films, such as films comprising silicon dioxide or silicon nitride.

Abstract: Provided is a plasma enhanced atomic layer deposition (PEALD) process for depositing etch-resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatments containing O2 and NH3 co-reactants. This PEALD process relies on one or more precursors reacting in tandem with the plasma exposure to deposit the etch-resistant thin-films of SiOCN. The films display excellent resistance to wet etching with dilute aqueous HF solutions, both after deposition and after post-deposition plasma treatment(s). Accordingly, these films are expected to display excellent stability towards post-deposition fabrication steps utilized during device manufacturing and build.

Abstract: A method of forming a molybdenum-containing material on a substrate is described, in which the substrate is contacted with molybdenum oxytetrachloride (MoOCl4) vapor under vapor deposition conditions, to deposit the molybdenum-containing material on the substrate. In various implementations, a diborane contact of the substrate may be employed to establish favorable nucleation conditions for the subsequent bulk deposition of molybdenum, e.g., by chemical vapor deposition (CVD) techniques such as pulsed CVD.

Abstract: Provided is a process for the vapor deposition of molybdenum or tungsten, and the use of molybdenum hexacarbonyl (Mo(CO)6) or tungsten hexacarbonyl (W(CO)6) for such deposition, e.g., in the manufacture of semiconductor devices in which molybdenum-containing or tungsten-containing films are desired. In accordance with one aspect of the invention, molybdenum hexacarbonyl (Mo(CO)6) has been found in vapor deposition processes such as chemical vapor deposition (CVD) to provide low resistivity, high deposition rate films in conjunction with a pulsed deposition process in which a step involving a brief pulse of H2O is utilized. This pulsing with H2O vapor was found to be effective in reducing the carbon content of films produced from Mo(CO)6-based CVD processes.

Abstract: A deposited cobalt composition is described, including cobalt and one or more alloy component that is effective in combination with cobalt to enhance adhesion to a substrate when exposed on the substrate to variable temperature and/or delaminative force conditions, as compared to corresponding elemental cobalt, wherein the one or more alloy component is selected from the group consisting of boron, phosphorous, tin, antimony, indium, and gold. Such deposited cobalt composition may be employed for metallization in semiconductor devices and device precursor structures, flat-panel displays, and solar panels, and provides highly adherent metallization when the metallized substrate is subjected to thermal cycling and/or chemical mechanical planarization operations in the manufacturing of the semiconductor, flat-panel display, or solar panel product.

Abstract: Plasma enhanced atomic layer deposition (PEALD) processes which use a ruthenium precursor of formula RARBRu(0), wherein RA is an aryl group-containing ligand, and RB is a diene group-containing ligand, along with a reducing plasma applied at greater than 200 W are described. Use of the RARBRu(0) ruthenium precursors in PEALD with +200 W reducing plasma such as ammonia plasma, can provide very good rates of deposition of Ru, have lower carbon and less resistivity, and provide very dense Ru films. The method can be used to form well-formed Ru film with high conformality on integrated circuits and other microelectronic devices.

Abstract: Chemical vapor deposition (CVD) processes which use a ruthenium precursor of formula R1R2Ru(0), wherein R1 is an aryl group-containing ligand, and R2 is a diene group-containing ligand and a reducing gas a described. The CVD can include oxygen after an initial deposition period using the ruthenium precursor and reducing gas. The method can provide selective Ru deposition on conductive materials while minimizing deposition on non-conductive or less conductive materials. Further, the subsequent use of oxygen can significantly improve deposition rate while minimizing or eliminating oxidative damage of the substrate material. The method can be used to form Ru-containing layers on integrated circuits and other microelectronic devices.