Patents by Inventor Philip S. H. Chen
Philip S. H. Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 8674127Abstract: Precursors for use in depositing antimony-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of A Ge2Sb2Te5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM) or for the manufacturing of thermoelectric devices, by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).Type: GrantFiled: April 30, 2009Date of Patent: March 18, 2014Assignee: Advanced Technology Materials, Inc.Inventors: Tianniu Chen, William Hunks, Philip S. H. Chen, Chongying Xu, Leah Maylott
-
Publication number: 20130288462Abstract: Precursors for use in depositing tellurium-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of Ge2Sb2Te5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM), by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).Type: ApplicationFiled: June 6, 2013Publication date: October 31, 2013Inventors: Matthias Stender, Chongying Xu, Tianniu Chen, William Hunks, Philip S.H. Chen, Jeffrey F. Roeder, Thomas H. Baum
-
Publication number: 20130029456Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.Type: ApplicationFiled: September 18, 2012Publication date: January 31, 2013Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: William Hunks, Tianniu Chen, Chongying Xu, Jeffrey F. Roeder, Thomas H. Baum, Matthias Stender, Philip S.H. Chen, Gregory T. Stauf, Bryan C. Hendrix
-
Patent number: 8330136Abstract: A PCM device has the composition GexTeyNzAm deposited onto a substrate, where x is about 40% to about 60%, y is about 30% to about 49%, and z is about 5% to about 20% and more preferably about 5% to about 40%. The component represented as A is optional and representative of an element of Sb, Sn, In, Ga, or Zn, and m is up to about 15%. The composition is in the form of a film, and the nitrogen allows for the substantially conformal deposition of the film onto the substrate. A CVD process for depositing the PCM comprises delivering a Ge-based precursor and a Te-based precursor in vapor form to a CVD chamber, heating and pressurizing the chamber, and depositing the film onto a substrate. In making a phase change device using this process, the film is annealed and polished.Type: GrantFiled: December 4, 2009Date of Patent: December 11, 2012Assignee: Advanced Technology Materials, Inc.Inventors: Jun-Fei Zheng, Jeffrey F. Roeder, Weimin Li, Philip S. H. Chen
-
Patent number: 8268665Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.Type: GrantFiled: June 26, 2011Date of Patent: September 18, 2012Assignee: Advanced Technology Materials, Inc.Inventors: William Hunks, Tianniu Chen, Chongying Xu, Jeffrey F. Roeder, Thomas H. Baum, Matthias Stender, Philip S. H. Chen, Gregory T. Stauf, Bryan C. Hendrix
-
Publication number: 20120108038Abstract: Germanium, tellurium, and/or antimony precursors are usefully employed to form germanium-, tellurium- and/or antimony-containing films, such as films of GeTe, GST, and thermoelectric germanium-containing films. Processes for using these precursors to form amorphous films are also described. Further described is the use of [{nBuC(iPrN)2}2Ge] or Ge butyl amidinate to form GeTe smooth amorphous films for phase change memory applications.Type: ApplicationFiled: January 9, 2012Publication date: May 3, 2012Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Philip S.H. Chen, William Hunks, Tianniu Chen, Matthias Stender, Chongying Xu, Jeffrey F. Roeder, Weimin Li
-
Patent number: 8109130Abstract: A gas detector and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The detector in a preferred structural arrangement employs a microelectromechanical system (MEMS)-based device structure and/or a free-standing metal element that functions as a sensing component and optionally as a heat source when elevated temperature sensing is required. The free-standing metal element can be fabricated directly onto a standard chip carrier/device package so that the package becomes a platform of the detector.Type: GrantFiled: August 7, 2009Date of Patent: February 7, 2012Assignee: Advanced Technology Materials, Inc.Inventors: Frank Dimeo, Jr., Philip S. H. Chen, Jeffrey W. Neuner, James Welch, Michele Stawasz, Thomas H. Baum, Mackenzie E. King, Ing-Shin Chen, Jeffrey F. Roeder
-
Patent number: 8093140Abstract: Germanium, tellurium, and/or antimony precursors are usefully employed to form germanium-, tellurium- and/or antimony-containing films, such as films of GeTe, GST, and thermoelectric germanium-containing films. Processes for using these precursors to form amorphous films are also described. Further described is the use of [{nBuC(iPrN)2}2Ge] or Ge butyl amidinate to form GeTe smooth amorphous films for phase change memory applications.Type: GrantFiled: October 31, 2008Date of Patent: January 10, 2012Assignee: Advanced Technology Materials, Inc.Inventors: Philip S. H. Chen, William Hunks, Tianniu Chen, Matthias Stender, Chongying Xu, Jeffrey F. Roeder, Weimin Li
-
Publication number: 20110260132Abstract: A PCM device has the composition GexTeyNzAm deposited onto a substrate, where x is about 40% to about 60%, y is about 30% to about 49%, and z is about 5% to about 20% and more preferably about 5% to about 40%. The component represented as A is optional and representative of an element of Sb, Sn, In, Ga, or Zn, and m is up to about 15%. The composition is in the form of a film, and the nitrogen allows for the substantially conformal deposition of the film onto the substrate. A CVD process for depositing the PCM comprises delivering a Ge-based precursor and a Te-based precursor in vapor form to a CVD chamber, heating and pressurizing the chamber, and depositing the film onto a substrate. In making a phase change device using this process, the film is annealed and polished.Type: ApplicationFiled: December 4, 2009Publication date: October 27, 2011Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Jun-Fei Zheng, Jeffrey F. Roeder, Weimin Li, Philip S. H. Chen
-
Publication number: 20110263100Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.Type: ApplicationFiled: June 26, 2011Publication date: October 27, 2011Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: William Hunks, Tianniu Chen, Chongying Xu, Jeffrey F. Roeder, Thomas H. Baum, Matthias Stender, Philip S.H. Chen, Gregory T. Stauf, Bryan C. Hendrix
-
Patent number: 8008117Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.Type: GrantFiled: August 22, 2010Date of Patent: August 30, 2011Assignee: Advanced Technology Materials, Inc.Inventors: William Hunks, Tianniu Chen, Chongying Xu, Jeffrey F. Roeder, Thomas H. Baum, Melissa A. Petruska, Matthias Stender, Philip S. H. Chen, Gregory T. Stauf, Bryan C. Hendrix
-
Publication number: 20110180905Abstract: A multilayer film stack containing germanium, antimony and tellurium that can be annealed to form a GST product material of homogeneous and smooth character, wherein at least one antimony-containing layer is isolated from a tellurium-containing layer by an intervening germanium layer, and the multilayer film stack comprises at least two intervening germanium layers. The multilayer film stack can be formed by vapor deposition techniques such as chemical vapor deposition or atomic layer deposition. The annealable multilayer film stack can be formed in high aspect ratio vias to form phase change memory devices of superior character with respect to the stoichiometric and morphological characteristics of the GST product material.Type: ApplicationFiled: June 8, 2009Publication date: July 28, 2011Applicant: Advanced Technology Materials, Inc.Inventors: Jun-Fei Zheng, Jeffrey F. Roeder, Philip S.H. Chen
-
Publication number: 20110111556Abstract: Precursors for use in depositing antimony-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of A Ge2Sb2Te5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM) or for the manufacturing of thermoelectric devices, by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).Type: ApplicationFiled: April 30, 2009Publication date: May 12, 2011Applicant: Advanced Technology Materials, Inc.Inventors: Tianniu Chen, William Hunks, Philip S.H. Chen, Chongying Xu, Leah Maylott
-
Publication number: 20100317150Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.Type: ApplicationFiled: August 22, 2010Publication date: December 16, 2010Applicant: Advanced Technology Materials, Inc.Inventors: William Hunks, Tianniu Chen, Chongying Xu, Jeffrey F. Roeder, Thomas H. Baum, Melissa A. Petruska, Matthias Stender, Philip S.H. Chen, Gregory T. Stauf, Bryan C. Hendrix
-
Patent number: 7838329Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.Type: GrantFiled: May 12, 2007Date of Patent: November 23, 2010Assignee: Advanced Technology Materials, Inc.Inventors: William Hunks, Tianniu Chen, Chongying Xu, Jeffrey F. Roeder, Thomas H. Baum, Melissa A. Petruska, Matthias Stender, Philip S. H. Chen, Gregory T. Stauf, Bryan C. Hendrix
-
Publication number: 20090305458Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.Type: ApplicationFiled: March 12, 2007Publication date: December 10, 2009Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: William Hunks, Tianniu Chen, Chongying Xu, Jeffrey F. Roeder, Thomas H. Baum, Melissa A. Petruska, Matthias Stender, Philip S.H. Chen, Gregory T. Stauf, Bryan C. Hendrix
-
Publication number: 20090305427Abstract: A gas detector and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The detector in a preferred structural arrangement employs a microelectromechanical system (MEMS)-based device structure and/or a free-standing metal element that functions as a sensing component and optionally as a heat source when elevated temperature sensing is required. The free-standing metal element can be fabricated directly onto a standard chip carrier/device package so that the package becomes a platform of the detector.Type: ApplicationFiled: August 7, 2009Publication date: December 10, 2009Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Frank Dimeo, JR., Philip S.H. Chen, Jeffrey W. Neuner, James Welch, Michele Stawasz, Thomas H. Baum, Mackenzie E. King, Ing-Shin Chen, Jeffrey F. Roeder
-
Publication number: 20090215225Abstract: Precursors for use in depositing tellurium-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM), by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).Type: ApplicationFiled: February 24, 2009Publication date: August 27, 2009Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Matthias Stender, Chongying Xu, Tianniu Chen, William Hunks, Philip S.H. Chen, Jeffrey F. Roeder, Thomas H. Baum
-
Publication number: 20090112009Abstract: Germanium, tellurium, and/or antimony precursors are usefully employed to form germanium-, tellurium- and/or antimony-containing films, such as films of GeTe, GST, and thermoelectric germanium-containing films. Processes for using these precursors to form amorphous films are also described. Further described is the use of [{nBuC(iPrN)2}2Ge] or Ge butyl amidinate to form GeTe smooth amorphous films for phase change memory applications.Type: ApplicationFiled: October 31, 2008Publication date: April 30, 2009Applicant: Advanced Technology Materials, Inc.Inventors: Philip S.H. Chen, William Hunks, Tianniu Chen, Matthias Stender, Chongying Xu, Jeffrey F. Roeder, Weimin Li
-
Patent number: 7475588Abstract: A gas detector and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The detector in a preferred structural arrangement employs a microelectromechanical system (MEMS)-based device structure and/or a free-standing metal element that functions as a sensing component and optionally as a heat source when elevated temperature sensing is required. The free-standing metal element can be fabricated directly onto a standard chip carrier/device package so that the package becomes a platform of the detector.Type: GrantFiled: February 14, 2005Date of Patent: January 13, 2009Assignee: Advanced Technology Materials, Inc.Inventors: Frank Dimeo, Jr., Philip S. H. Chen, Jeffrey W. Neuner, James Welch, Michele Stawacz, Thomas H. Baum, Mackenzie E. King, Ing-Shin Chen, Jeffrey F. Roeder