Abstract: The present invention refers to a three terminal tandem solar generation unit (1) comprising: —a first absorbing layer (7) made of a perovskite type compound, —a second absorbing layer (11, 11?), —a first and a second interdigitated front contacts (5a, 5b) arranged on the front side of the first absorbing layer (7), the first front contact (5a) having a first polarity and the second front contact (5b) having a second polarity, —a back contact (17, 17?) having the first or the second polarity arranged on the back side of the second absorbing layer (11, 11?), —an interface layer (9, 90, 9?, 90?) arranged between the first (7) and the second (11, 11?) absorbing layers comprising a first semiconductor sub-layer (9a, 90a, 9a?, 90a?) doped according to the first polarity and a second sub-layer (9b, 90b, 9b?, 90b?) doped according to the second polarity and configured for enabling carriers associated with a polarity different than the polarity of the back contact (17, 17?) to be transferred from the second absorbing

Abstract: The present invention refers to a three terminal tandem solar generation unit (1) comprising: —a first absorbing layer (7) made of a perovskite type compound, —a second absorbing layer (11, 11?), —a first and a second interdigitated front contacts (5a, 5b) arranged on the front side of the first absorbing layer (7), the first front contact (5a) having a first polarity and the second front contact (5b) having a second polarity, —a back contact (17, 17?) having the first or the second polarity arranged on the back side of the second absorbing layer (11, 11?), —an interface layer (9, 90, 9?, 90?) arranged between the first (7) and the second (11, 11?) absorbing layers comprising a first semiconductor sub-layer (9a, 90a, 9a?, 90a?) doped according to the first polarity and a second sub-layer (9b, 90b, 9b?, 90b?) doped according to the second polarity and configured for enabling carriers associated with a polarity different than the polarity of the back contact (17, 17?) to be transferred from the second absorbing

Abstract: The present application discloses devices that include a perovskite layer, a first layer that includes an oxide, and an interface layer, where the interface layer is positioned between the first layer and the perovskite layer, the interface layer is in physical contact with both the first layer and the perovskite layer, and the interface layer consists essentially of the oxide.

Abstract: An aspect of the present disclosures is a method that includes applying a perovskite precursor solution to a first solid conductor and treating the perovskite precursor solution such that a first portion of the perovskite precursor solution is converted to a first solid perovskite, where the first solid conductor comprises a first charge transport characteristic, which is predominantly p-type or predominantly n-type, and the treating results in the first solid perovskite having a second charge transport characteristic that is substantially the same as the first charge transport characteristic.

Abstract: The present application discloses devices that includes a perovskite layer, a first layer that includes an oxide, and an interface layer, where the interface layer is positioned between the first layer and the perovskite layer, the interface layer is in physical contact with both the first layer and the perovskite layer, and the interface layer consists essentially of the oxide.

Abstract: An aspect of the present disclosures is a method that includes applying a perovskite precursor solution to a first solid conductor and treating the perovskite precursor solution such that a first portion of the perovskite precursor solution is converted to a first solid perovskite, where the first solid conductor comprises a first charge transport characteristic, which is predominantly p-type or predominantly n-type, and the treating results in the first solid perovskite having a second charge transport characteristic that is substantially the same as the first charge transport characteristic.