Patents by Inventor Philip Swab

Philip Swab has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Memory using mixed valence conductive oxides
    Publication number: 20060171200
    Abstract: A memory using a mixed valence conductive oxides. The memory includes a mixed valence conductive oxide that is less conductive in its oxygen deficient state and a mixed electronic ionic conductor that is an electrolyte to oxygen and promotes an electric field effective to cause oxygen ionic motion.
    Type: Application
    Filed: March 30, 2005
    Publication date: August 3, 2006
    Applicant: UNITY SEMICONDUCTOR CORPORATION
    Inventors: Darrell Rinerson, Christophe Chevallier, Wayne Kinney, Roy Lambertson, Steven Longcor, John Sanchez, Lawrence Schloss, Philip Swab, Edmond Ward
  • Multi-resistive state element with reactive metal
    Patent number: 7082052
    Abstract: A treated conductive element is provided. A conductive element can be treated by depositing either a reactive metal or a very thin layer of material on the conductive element. The reactive metal (or very thin layer of material) would typically be sandwiched between the conductive element and an electrode. The structure additionally exhibits non-linear IV characteristics, which can be favorable in certain arrays.
    Type: Grant
    Filed: February 6, 2004
    Date of Patent: July 25, 2006
    Inventors: Darrell Rinerson, Wayne Kinney, Edmond Ward, Steve Kuo-Ren Hsia, Steven W. Longcor, Christophe Chevallier, John E. Sanchez, Jr., Philip Swab
  • MEMORY ELEMENT HAVING ISLANDS
    Publication number: 20050243595
    Abstract: A memory including a memory element having islands is provided. The memory has address decoding circuitry and an array of memory plugs. The memory plugs include memory element that have island structures of a first material within the bulk of a second material. The island structures are typically nanoparticles. The memory plugs can be placed in a first resistive state at a first write voltage, placed in a second resistive state at a second write voltage, and have its resistive state determined at a read voltage.
    Type: Application
    Filed: June 15, 2004
    Publication date: November 3, 2005
    Applicant: UNITY SEMICONDUCTOR CORPORATION
    Inventors: Darrell Rinerson, Christophe Chevallier, Philip Swab, Steve Hsia, John Sanchez, Mary Calarrudo, Steven Longcor, Wayne Kinney
  • Multi-resistive state element with reactive metal
    Publication number: 20050174835
    Abstract: A treated conductive element is provided. A conductive element can be treated by depositing either a reactive metal or a very thin layer of material on the conductive element. The reactive metal (or very thin layer of material) would typically be sandwiched between the conductive element and an electrode. The structure additionally exhibits non-linear IV characteristics, which can be favorable in certain arrays.
    Type: Application
    Filed: February 6, 2004
    Publication date: August 11, 2005
    Applicant: Unity Semiconductor Corporation
    Inventors: Darrell Rinerson, Wayne Kinney, Edmond Ward, Steve Hsia, Steven Longcor, Christophe Chevallier, John Sanchez, Philip Swab
  • Electrically tunable low secondary electron emission diamond-like coatings and process for depositing coatings
    Patent number: 6486597
    Abstract: A diamond-like carbon-containing material useful as a coating for electronic devices including field emission devices and color television tubes, the coatings having both low secondary electron emission coefficients of less than unity and electrical resistivity tunable over a range of from about 10e−2 to about 10e16.
    Type: Grant
    Filed: October 21, 1999
    Date of Patent: November 26, 2002
    Assignee: N.V. Bekaert S.A.
    Inventors: Arvind Goel, Craig Anthony Outten, Chandra Venkatraman, Philip Swab