Patents by Inventor Philip W. Foy

Philip W. Foy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4297783
    Abstract: Surface recombination current in GaAs devices is reduced by means of a semi-insulating, oxygen, iron or chromium doped monocrystalline layer of AlGaAs grown by MBE. The AlGaAs layer is grown on a GaAs body and is then masked. Diffusion of suitable impurities through a window in the mask converts the exposed portions of the AlGaAs layer to low resistivity and modifies the conductivity of the underlying zone of the GaAs body. The peripheral portions of the AlGaAs layer, however, remain semi-insulating and are effective to reduce the surface recombination velocity - diffusion length product by more than an order of magnitude.
    Type: Grant
    Filed: April 21, 1980
    Date of Patent: November 3, 1981
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Horace C. Casey, Jr., Alfred Y. Cho, Philip W. Foy
  • Patent number: 4231050
    Abstract: Surface recombination current in GaAs devices is reduced by means of a semi-insulating, oxygen, iron or chromium doped monocrystalline layer of AlGaAs grown by MBE. The AlGaAs layer is grown on a GaAs body and is then masked. Diffusion of suitable impurities through a window in the mask converts the exposed portions of the AlGaAs layer to low resistivity and modifies the conductivity of the underlying zone of the GaAs body. The peripheral portions of the AlGaAs layer, however, remain semi-insulating and are effective to reduce the surface recombination velocity - diffusion length product by more than an order of magnitude.
    Type: Grant
    Filed: January 30, 1979
    Date of Patent: October 28, 1980
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Horace C. Casey, Jr., Alfred Y. Cho, Philip W. Foy