Abstract: A capacitive manometer offering improved measurement accuracy is disclosed which includes at least one electrode structure having an inner electrode structure and an outer electrode structure separated by at least one gap, at least one flexible diaphragm having at least one conductive material positioned thereon or integrated therein may be positioned in movable relation to the electrode structure and in proximity to the electrode structure, and at least one non-planar baffle less prone to transient measurement errors having an inner baffle structure and an outer baffle structure separated by at least one baffle orifice positioned distantly from the electrode structure proximate to the flexible diaphragm.

Abstract: A pressure sensor may measure gas or liquid pressure. A chamber may have an inlet that receives the gas or liquid. A flexible diaphragm may be within the chamber that has a surface exposed to the gas or liquid after it flows through the inlet. A pressure sensor system may sense changes in the flexible diaphragm caused by changes in the pressure of the gas or liquid. A pressure-insensitive sensor system may sense changes in the flexible diaphragm that are not caused by changes in the pressure of the gas or liquid. The pressure-insensitive sensor system may be insensitive to changes in the flexible diaphragm caused by changes in the pressure of the gas or liquid.

Abstract: An improved gas delivery system and method delivers a sequence of pulses of prescribed amounts of at least two gases to a process chamber of a process tool in accordance with a predetermined recipe of steps of a gas delivery process. The system comprises: a plurality of channels, each including a control valve connected so as to control each pulse of gas flowing through the corresponding channel into the process chamber of the process tool; and an exhaust valve for controlling the pressure within the process chamber, the exhaust valve including a valve controller for controlling the operation of the gas delivery system including the control valves and the exhaust valve in accordance with the predetermined recipe of steps.

Abstract: An FET device comprises a substrate with source and drain regions separated by a gate structure. Between the gate and substrate is an insulator formed of a cubic fluorite structure material that is lattice matched within 1% to the substrate. The insulator may be a group II fluoride such as Ca.sub.y Cd.sub.1-y F.sub.2 (0.ltoreq.y.ltoreq.1), Sr.sub.z Ba.sub.1-z F.sub.2 (0.ltoreq.z.ltoreq.1), or Ba.sub.x Ca.sub.1-x F.sub.2 (0.ltoreq.x.ltoreq.1), or an oxide such as CeO.sub.2, PbO.sub.2. The substrate may be a bulk semiconductor or an epitaxial layer such as Si, InP, GaAs, Ga.sub.x Al.sub.1-x As, GaSb, InAs, or AlAs.