Patents by Inventor Philipp Drechsel
Philipp Drechsel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20170040165Abstract: What is specified is a method for producing a layer structure (10) as a buffer layer of a semiconductor component, said method comprising the following steps: a) provision of a carrier (1), which has a silicon surface (1a), b) deposition of a first layer sequence (2), which comprises a seeding layer (21) containing aluminium and nitrogen, on the silicon surface (1a) of the carrier (1) along a stacking direction (H) running perpendicular to a main plane of extent of the carrier (1), c) three-dimensional growth of a 3D-GaN layer (3), which is formed with gallium nitride, on a top surface (2a) of the first layer sequence (2) which is remote from the silicon surface (1a), d) two-dimensional growth of a 2D-GaN layer (4), which is formed with gallium nitride, on the outer surfaces (3a) of the 3D-GaN layer (3) which are remote from the silicon surface (1a).Type: ApplicationFiled: April 13, 2015Publication date: February 9, 2017Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Philipp DRECHSEL, Werner BERGBAUER, Juergen OFF, Peter STAUSS
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Publication number: 20170012165Abstract: A method of producing a semiconductor layer sequence includes providing a growth substrate having a growth surface on a growth side, growing a first nitride semiconductor layer on the growth side, growing a second nitride semiconductor layer on the first nitride semiconductor layer, wherein the second nitride semiconductor layer includes at least one opening or at least one opening is produced in the second nitride semiconductor layer or at least one opening is created in the second nitride semiconductor layer during the growing process, removing at least one part of the first nitride semiconductor layer through the openings in the second nitride semiconductor layer, and growing a third nitride semiconductor layer on the second nitride semiconductor layer, wherein the third nitride semiconductor layer covers the openings at least in places.Type: ApplicationFiled: February 24, 2015Publication date: January 12, 2017Applicant: Osram Optp Semiconductors GMBHInventors: Joachim Hertkorn, Werner Bergbauer, Philipp Drechsel
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Publication number: 20160093765Abstract: A method is provided for producing a nitride compound semiconductor device. A growth substrate has a silicon surface. A buffer layer, which comprises AlxInyGa1-x-yN with 0?x?1, 0?y?1 and x+y?1, is grown on onto the silicon surface of the substrate. A semiconductor layer sequence is grown onto the buffer layer. The buffer layer includes a material composition that varies in such a way that a lateral lattice constant of the buffer layer increases stepwise or continuously in a first region and decreases stepwise or continuously in a second region, which follows the first region in the growth direction. At an interface with the semiconductor layer sequence, the buffer layer includes a smaller lateral lattice constant than a semiconductor layer of the semiconductor layer sequence adjoining the buffer layer.Type: ApplicationFiled: May 28, 2014Publication date: March 31, 2016Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Werner Bergbauer, Philipp Drechsel, Peter Stauss, Patrick Rode
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Publication number: 20150364641Abstract: A semiconductor layer sequence includes a first nitridic compound semiconductor layer, a second nitridic compound semiconductor layer, and an intermediate layer arranged between the first and second nitridic compound semiconductor layers. Beginning with the first nitridic compound semiconductor layer, the intermediate layer and the second nitridic compound semiconductor layer are arranged one after the other in a direction of growth of the semiconductor layer sequence and are adjacent to each other in direct succession. The intermediate layer has a lattice constant different from the lattice constant of the first nitridic compound semiconductor layer at least at some points. The second nitridic compound semiconductor layer is lattice-adapted to the intermediate layer at least at some points.Type: ApplicationFiled: January 28, 2014Publication date: December 17, 2015Inventors: Werner Bergbauer, Philipp Drechsel, Peter Stauß, Patrick Rode
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Patent number: 9184051Abstract: A method of producing a nitride compound semiconductor component includes providing a growth substrate having a silicon surface, growing a buffer layer containing an aluminum-containing nitride compound semiconductor onto the silicon surface, growing a stress layer structure that produces a compressive stress, and growing a functional semiconductor layer sequence onto the stress layer structure, wherein the stress layer structure includes a first GaN semiconductor layer and a second GaN semiconductor layer, a masking layer is embedded in the first GaN semiconductor layer, an Al(Ga)N-intermediate layer that produces a compressive stress is disposed between the first GaN semiconductor layer and the second GaN semiconductor layer, and the stress layer structure does not contain further Al(Ga)N-intermediate layers.Type: GrantFiled: September 21, 2012Date of Patent: November 10, 2015Assignee: OSRAM Opto Semiconductors GmbHInventors: Peter Stauss, Philipp Drechsel
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Patent number: 9184337Abstract: A method is provided for producing a light-emitting diode. In one embodiment, a series of layers is deposited on the silicon surface of a carrier in a direction of growth and a light-emitting diode structure is deposited on the series of layers. The series of layers includes a GaN layer, which is formed with gallium nitride. The series of layers includes a masking layer, which is formed with silicon nitride. The masking layer follows at least part of the GaN layer in the direction of growth.Type: GrantFiled: July 18, 2014Date of Patent: November 10, 2015Assignee: OSRAM Opto Semiconductors GmbHInventors: Peter Stauss, Philipp Drechsel
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Publication number: 20150228858Abstract: An optoelectronic component includes a layer structure which has a first gallium nitride layer and an aluminum-containing nitride intermediate layer. In this case, the aluminum-containing nitride intermediate layer adjoins the first gallium nitride layer. The layer structure has an undoped second gallium nitride layer which adjoins the aluminum-containing nitride intermediate layer.Type: ApplicationFiled: September 25, 2013Publication date: August 13, 2015Applicant: OSRAM Opto Semiconductors GmbHInventors: Werner Bergbauer, Philipp Drechsel, Peter Stauss, Patrick Rode
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Patent number: 9059353Abstract: An optoelectronic device having an active layer that includes a multiplicity of structural elements spaced apart from one another laterally, wherein the structural elements each have a quantum well structure including at least one barrier layer composed of Inx1Aly1Ga1-x1-y1N, wherein 0?x1?1, 0?y1?1 and x1+y1?1, and at least one quantum well layer composed of Inx2Aly2Ga1-x2-y2N, wherein 0?x2?1, 0?y2?1 and x2+y2?1.Type: GrantFiled: August 30, 2012Date of Patent: June 16, 2015Assignee: OSRAM Opto Semiconductors GmbHInventors: Simeon Katz, Bastian Galler, Martin Strassburg, Matthias Sabathil, Philipp Drechsel, Werner Bergbauer, Martin Mandl
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Patent number: 8884311Abstract: An optoelectronic semiconductor chip includes a semiconductor layer stack and a radiation exit face or radiation entrance face, wherein the semiconductor layer stack includes an active layer that generates or receives electromagnetic radiation, and a plurality of nanostructures arranged in the semiconductor layer stack and/or on the radiation exit or entrance face, at least some of the nanostructures including at least one substructure.Type: GrantFiled: April 29, 2011Date of Patent: November 11, 2014Assignee: OSRAM Opto Semiconductors GmbHInventors: Werner Bergbauer, Lutz Höppel, Philipp Drechsel, Christopher Kölper, Martin Straβburg, Patrick Rode
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Publication number: 20140329350Abstract: A method is provided for producing a light-emitting diode. In one embodiment, a series of layers is deposited on the silicon surface of a carrier in a direction of growth and a light-emitting diode structure is deposited on the series of layers. The series of layers includes a GaN layer, which is formed with gallium nitride. The series of layers includes a masking layer, which is formed with silicon nitride. The masking layer follows at least part of the GaN layer in the direction of growth.Type: ApplicationFiled: July 18, 2014Publication date: November 6, 2014Inventors: Peter Stauss, Philipp Drechsel
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Publication number: 20140302665Abstract: A method of producing a nitride compound semiconductor component includes providing a growth substrate having a silicon surface, growing a buffer layer containing an aluminium-containing nitride compound semiconductor onto the silicon surface, growing a stress layer structure that produces a compressive stress, and growing a functional semiconductor layer sequence onto the stress layer structure, wherein the stress layer structure includes a first GaN semiconductor layer and a second GaN semiconductor layer, a masking layer is embedded in the first GaN semiconductor layer, an Al(Ga)N-intermediate layer that produces a compressive stress is disposed between the first GaN semiconductor layer and the second GaN semiconductor layer, and the stress layer structure does not contain further Al(Ga)N-intermediate layers.Type: ApplicationFiled: September 21, 2012Publication date: October 9, 2014Inventors: Peter Stauss, Philipp Drechsel
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Publication number: 20140286369Abstract: An optoelectronic device having an active layer that includes a multiplicity of structural elements spaced apart from one another laterally, wherein the structural elements each have a quantum well structure including at least one barrier layer composed of Inx1Aly1Ga1-x1-y1N, wherein 0?x1?1, 0?y1?1 and x1+y1?1, and at least one quantum well layer composed of Inx2Aly2Ga1-x2-y2N, wherein 0?x2?1, 0?y2?1 and x2+y2?1.Type: ApplicationFiled: August 30, 2012Publication date: September 25, 2014Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Simeon Katz, Bastian Galler, Martin Strassburg, Matthias Sabathil, Philipp Drechsel, Werner Bergbauer, Martin Mandl
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Patent number: 8828768Abstract: A method is provided for producing a light-emitting diode. A carrier substrate has a silicon surface. A series of layers is deposited on the silicon surface in a direction of growth and a light-emitting diode structure is deposited on the series of layers. The series of layers includes a GaN layer, which is formed with gallium nitride. The series of layers includes a masking layer, which is formed with silicon nitride. The masking layer follows at least part of the GaN layer in the direction of growth.Type: GrantFiled: September 28, 2010Date of Patent: September 9, 2014Assignee: OSRAM Opto Semiconductors GmbHInventors: Peter Stauβ, Philipp Drechsel
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Publication number: 20130214285Abstract: A semiconductor component has a semiconductor layer sequence made of a nitridic composite semiconductor material on a substrate. The substrate includes a silicon surface facing the semiconductor layer sequence. The semiconductor layer sequence includes an active region and at least one intermediate layer made of an oxygen-doped AN composite semiconductor material between the substrate and the active region.Type: ApplicationFiled: August 11, 2011Publication date: August 22, 2013Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Peter Stauss, Joachim Hertkorn, Philipp Drechsel
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Publication number: 20130200432Abstract: A semiconductor component includes a semiconductor body based on a nitride compound semiconductor material, and a substrate on which the semiconductor body is arranged, wherein impurities are formed in the substrate in a targeted manner.Type: ApplicationFiled: July 7, 2011Publication date: August 8, 2013Applicant: OSRAM Opto Semiconductors GmbHInventors: Peter Stauß, Patrick Rode, Philipp Drechsel
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Publication number: 20130193450Abstract: An optoelectronic semiconductor chip includes a semiconductor layer stack and a radiation exit face or radiation entrance face, wherein the semiconductor layer stack includes an active layer that generates or receives electromagnetic radiation, and a plurality of nanostructures arranged in the semiconductor layer stack and/or on the radiation exit or entrance face, at least some of the nanostructures including at least one substructure.Type: ApplicationFiled: April 29, 2011Publication date: August 1, 2013Applicant: OSRAM Opto Semiconductors GmbHInventors: Werner Bergbauer, Lutz Höppel, Philipp Drechsel, Christopher Kölper, Martin Strassburg, Patrick Rode
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Publication number: 20130065342Abstract: A method is provided for producing a light-emitting diode. A carrier substrate has a silicon surface. A series of layers is deposited on the silicon surface in a direction of growth and a light-emitting diode structure is deposited on the series of layers. The series of layers includes a GaN layer, which is formed with gallium nitride. The series of layers includes a masking layer, which is formed with silicon nitride. The masking layer follows at least part of the GaN layer in the direction of growth.Type: ApplicationFiled: September 28, 2010Publication date: March 14, 2013Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Peter Stauss, Philipp Drechsel