Abstract: A family of optionally substituted oxonitridoberyllosilicate photoluminescent compositions (i.e., phosphors) is characterized by the formula AE1?x?y?uAy+uBe1?y?z?vBy+z+vSi1?z AlzO1?vN2+v: Eux,Ceu, where AE=Ba, Sr, Ca, Mg; A=Li, Na, K, Rb; 0?x?0.1; 0? u?0.1; 0<(x+u); 0?y?1; 0?z?1; (y+z+v)?1; and (x+y+u)?1. These phosphors may be used in phosphor converted LEDs which may be advantageously employed in illumination and display applications, for example.

Abstract: This specification discloses methods of enhancing the stability and performance of Eu2+ doped narrow band red emitting phosphors. In one embodiment the resulting phosphor compositions are characterized by crystallizing in ordered structure variants of the UCr4C4 crystal structure type and having a composition of AE1?xLi3?2yAl1+y?zSizO4?4y?zN4y+z:Eux (AE=Ca, Sr, Ba, or a combination thereof, 0<x<0.04, 0?y<1, 0<z<0.05, y+z?1). It is believed that the formal substitution (Al,O)+ by (Si,N)+ reduces the concentration of unwanted Eu3+ and thus enhances properties of the phosphor such as stability and conversion efficiency.

Abstract: This specification discloses methods of enhancing the stability and performance of Eu2+ doped narrow band red emitting phosphors. In one embodiment the resulting phosphor compositions are characterized by crystallizing in ordered structure variants of the UCr4C4 crystal structure type and having a composition of AE1?xLi3?2yAl1+y?zSizO4?4y?zN4y+z:Eux (AE=Ca, Sr, Ba, or a combination thereof, 0<x<0.04, 0?y<1, 0<z<0.05, y+z?1). It is believed that the formal substitution (Al,O)+ by (Si,N)+ reduces the concentration of unwanted Eu3+ and thus enhances properties of the phosphor such as stability and conversion efficiency.

Abstract: This specification discloses a method of enhancing the stability and performance of Eu2+ doped narrow band red emitting phosphors. The resulting phosphor compositions are characterized by crystallizing in ordered structure variants of the UCr4C4 crystal structure type and having a composition of AE1?xLi3?2yAl1+2y?zSizO4?4y?zN4y+z:EUx(AE=Ca, Sr, Ba; 0<x<0.04, 0?y<1, 0<z<0.05, y+z?1). It is believed that the formal substitution (Al,O)+ by (Si,N)+ reduces the concentration of unwanted Eu3+ and thus enhances properties of the phosphor such as stability and conversion efficiency.

Abstract: This specification discloses a method of enhancing the stability and performance of Eu2+ doped narrow band red emitting phosphors. The resulting phosphor compositions are characterized by crystallizing in ordered structure variants of the UCr4C4 crystal structure type and having a composition of AE1?xLi3?2yAl1+2y?zSizO4?4y?zN4y+z:EUx(AE=Ca, Sr, Ba; 0<x<0.04, 0?y<1, 0<z<0.05, y+z?1). It is believed that the formal substitution (Al,O)+ by (Si,N)+ reduces the concentration of unwanted Eu3+ and thus enhances properties of the phosphor such as stability and conversion efficiency.

Abstract: Embodiments of the invention include a light source and a nitridoberyllate phosphor disposed in a path of light emitted by the light source. The nitridoberyllate phosphor includes a trigonal planar BeN3 structure and/or a tetrahedral Be(N,O)4 structure.

Abstract: The invention provides, amongst others for application in a lighting unit, a phosphor selected from the class of M2D2C2-2bBbA2N6:Ln??(I) with M=selected from the group consisting of divalent Ca, Sr, and Ba; D=selected from the group consisting of monovalent Li, divalent Mg, Mn, Zn, Cd, and trivalent Al and Ga; C=selected from the group consisting of monovalent Li and Cu; B=selected from the group consisting of divalent Mg, Zn, Mn and Cd; A=selected from the group consisting of tetravalent Si, Ge, Ti, and Hf; Ln=selected from the group consisting of ES and RE; ES=selected from the group consisting of divalent Eu, Sm and Yb; RE=selected from the group consisting of trivalent Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, and Tm; and 0?b?1.

Abstract: Embodiments of the invention include a semiconductor light emitting device with a light emitting layer disposed between an n-type region and a p-type region. The light emitting layer emits first light. The device further includes AE1-xLi2Be4O6:Eux, wherein AE=one or more of Sr, Ba, Ca, disposed in the path of the first light. The AE1-xLi2Be4O6:Eux absorbs first light and emits second light. In some embodiments, the first light and second light may be blue.

Abstract: Embodiments of the invention include a semiconductor light emitting device with a light emitting layer disposed between an n-type region and a p-type region. The light emitting layer emits first light. The device further includes AE1-xLi2Be4O6:Eux, wherein AE=one or more of Sr, Ba, Ca, disposed in the path of the first light. The AE1-xLi2Be4O6:Eux absorbs first light and emits second light. In some embodiments, the first light and second light may be blue.

Abstract: Embodiments of the invention include a light source and a nitridoberyllate phosphor disposed in a path of light emitted by the light source. The nitridoberyllate phosphor includes a trigonal planar BeN3 structure and/or a tetrahedral Be(N,O)4 structure.

Abstract: The invention provides, amongst others for application in a lighting unit, a phosphor selected from the class of M2D2C2-2bBbA2N6:Ln ??(I) with M=selected from the group consisting of divalent Ca, Sr, and Ba; D=selected from the group consisting of monovalent Li, divalent Mg, Mn, Zn, Cd, and trivalent Al and Ga; C=selected from the group consisting of monovalent Li and Cu; B=selected from the group consisting of divalent Mg, Zn, Mn and Cd; A=selected from the group consisting of tetravalent Si, Ge, Ti, and Hf; Ln=selected from the group consisting of ES and RE; ES=selected from the group consisting of divalent Eu, Sm and Yb; RE=selected from the group consisting of trivalent Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, and Tm; and 0?b?1.