Abstract: The present invention relates to a solar cell comprising a heterojunction photoelectric device comprising, a front electrode layer, a back electrode layer comprising a metallic contact layer, a light-absorbing silicon layer arranged between said front electrode and said back electrode layers and a doped silicon-based layer arranged between said light-absorbing silicon layer and said back electrode layer, characterized in that said heterojunction photoelectric device further comprises a wide band gap material layer having an electronic band gap greater than 1.4 eV, said wide band gap material layer being applied on a surface of the light-absorbing silicon layer between said light-absorbing silicon layer and said doped silicon-based layer. The present heterojunction layer or stack of layers is compatible with thermal annealing and firing processes at T above 600° C.

Abstract: The present invention relates to a solar cell comprising a heterojunction photoelectric device comprising, a front electrode layer, a back electrode layer comprising a metallic contact layer, a light-absorbing silicon layer arranged between said front electrode and said back electrode layers and a doped silicon-based layer arranged between said light-absorbing silicon layer and said back electrode layer, characterized in that said heterojunction photoelectric device further comprises a wide band gap material layer having an electronic band gap greater than 1.4 eV, said wide band gap material layer being applied on a surface of the light-absorbing silicon layer between said light-absorbing silicon layer and said doped silicon-based layer. The present heterojunction layer or stack of layers is compatible with thermal annealing and firing processes at T above 600° C.

Abstract: In the present invention a new solar photovoltaic module is proposed comprising a solar cell comprising a silicon layer having a first surface and a second surface opposite to said first surface. The solar cell further comprises a passivating layer stack comprising a heterogeneous layer arranged on said first surface and/or on said second surface. The heterogeneous layer, having a back surface and a front surface, comprises a non-conducting matrix having a refractive index being lower than 3.0. The heterogeneous layer further comprises inclusions of at least one conductive material in said matrix, and at least some of said inclusions extend from said back surface to said front surface of the heterogeneous layer for electrically connecting the surfaces of the heterogeneous layer.