Abstract: A shielded direct current link (“DC link”) busbar includes a central planar element that includes a first surface and a second surface axially opposed to the first surface. The shielded DC link busbar further includes a first conductive lamina disposed over the first surface and a second conductive lamina disposed over the second surface. Further, the first conductive lamina and the second conductive lamina are electrically coupled.

Abstract: Systems and methods are provided to measure a voltage across a two-state dipole. The systems and methods measure voltages across two measurement paths of operational circuitry at first and second sensor terminals. The operational circuitry is configured to decouple the first and second sensor terminal based on a dipole voltage. The systems and methods further estimate the dipole voltage based on the voltages of the two measurement paths.

Abstract: Systems and methods are provided to measure a voltage across a two-state dipole. The systems and methods measure voltages across two measurement paths of operational circuitry at first and second sensor terminals. The operational circuitry is configured to decouple the first and second sensor terminal based on a dipole voltage. The systems and methods further estimate the dipole voltage based on the voltages of the two measurement paths.

Abstract: A shielded direct current link (“DC link”) busbar includes a central planar element that includes a first surface and a second surface axially opposed to the first surface. The shielded DC link busbar further includes a first conductive lamina disposed over the first surface and a second conductive lamina disposed over the second surface. Further, the first conductive lamina and the second conductive lamina are electrically coupled.

Abstract: A gate drive unit includes a measurement unit, a multi-resistive driving device, and a processing unit. The measurement unit measures a voltage across main terminals of a power switch. The driving device includes plural individually controllable resistive elements. The processing unit controls a control voltage applied to a control electrode of the power switch to activate the power switch. The processing unit individually activates or deactivates the resistive elements of the multi-resistive driving device to change which of the resistive elements at least partially conducts the control voltage to the power switch at different times responsive to the voltage across the main terminals representing a short circuit event. The processing unit changes which of the resistive elements are activated or deactivated to control a rate at which the control voltage decreases.

Abstract: A gate drive unit includes a measurement unit, a multi-resistive driving device, and a processing unit. The measurement unit measures a voltage across main terminals of a power switch. The driving device includes plural individually controllable resistive elements. The processing unit controls a control voltage applied to a control electrode of the power switch to activate the power switch. The processing unit individually activates or deactivates the resistive elements of the multi-resistive driving device to change which of the resistive elements at least partially conducts the control voltage to the power switch at different times responsive to the voltage across the main terminals representing a short circuit event. The processing unit changes which of the resistive elements are activated or deactivated to control a rate at which the control voltage decreases.

Abstract: A switch apparatus includes a semiconductor power switch connected for delivering current while driven by a gate drive voltage and an adaptive gate drive unit connected to a gate of the power switch. The gate drive unit is configured to select one of a plurality of pre-determined time functions for a gate drive voltage, and to deliver the gate drive voltage to the gate of the power switch according to the selected time function, thereby driving the power switch to deliver current within a pre-determined slew rate envelope.

Abstract: A switch apparatus includes a semiconductor power switch connected for delivering current while driven by a gate drive voltage and an adaptive gate drive unit connected to a gate of the power switch. The gate drive unit is configured to select one of a plurality of pre-determined time functions for a gate drive voltage, and to deliver the gate drive voltage to the gate of the power switch according to the selected time function, thereby driving the power switch to deliver current within a pre-determined slew rate envelope.