Abstract: An optoelectronic unit includes a semiconductor chip configured to emit primary radiation with a first wavelength range during operation of the optoelectronic unit. The optoelectronic unit also includes a component including an optically active material. The component is arranged at least partially in the beam path of the semiconductor chip. The optically active material is not intended to be excited by the primary radiation with the first wavelength range. The optically active material incudes a proportion in the component of 0.004 wt %, inclusive, to 1 wt %, inclusive.

Abstract: In an embodiment an optoelectronic lighting device includes a carrier, at least one light-emitting optoelectronic semiconductor component arranged on an upper side of the carrier and having a first light emission area on a surface side facing away from the carrier and a second light emission area on a side surface perpendicular to the carrier, at least one functional layer arranged on the first light emission area and on the second light emission area, wherein the functional layer is a conversion layer containing phosphor, and a border interface surrounding the functional layer in plan view, wherein the border interface includes a transparent material, and wherein the border interface is located on an outer surface of the optoelectronic lighting device.

Abstract: In an embodiment an optoelectronic lighting device includes a carrier, exactly one light-emitting optoelectronic semiconductor component, wherein the semiconductor component has a light emission area on at least one surface side, and wherein the semiconductor component is arranged on an upper side of the carrier, at least one functional layer arranged above the light emission area and/or adjacent to the light emission area and an edging for the functional layer, wherein the edging surrounds the functional layer when viewed in a circumferential direction, the circumferential direction being parallel to the upper side of the carrier around the functional layer, and wherein the edging is formed of a transparent material.

Abstract: An optoelectronic unit includes a semiconductor chip configured to emit primary radiation with a first wavelength range during operation of the optoelectronic unit. The optoelectronic unit also includes a component including an optically active material. The component is arranged at least partially in the beam path of the semiconductor chip. The optically active material is not intended to be excited by the primary radiation with the first wavelength range. The optically active material incudes a proportion in the component of 0.004 wt%, inclusive, to 1 wt%, inclusive.

Abstract: The invention relates to a luminophore mixture which comprises at least one quantum dot luminophore and at least one functional material, the functional material is formed such that it scatters electromagnetic radiation and/or has a high density.

Abstract: A phosphor combination may include a first phosphor and a second phosphor. The second phosphor may be a red-emitting quantum dot phosphor. The phosphor combination may optionally include a third phosphor that is a red-emitting phosphor with the formula (MB) (TA)3-2x(TC)1+2xO4-4xN4x:E. A conversion element may include the phosphor combination. An optoelectronic device may include the phosphor combination and a radiation-emitting semiconductor chip.

Abstract: A lighting device for emitting a red total radiation may be configured such that the lighting device has a semiconductor layer sequence configured to emit electromagnetic primary radiation. A conversion element may include a first fluorescent material of the formula Sr[Al2Li2O2N2]:Eu, crystallized in the tetragonal space group P42/m. The first fluorescent material may at least partially convert the electromagnetic primary radiation into an electromagnetic secondary radiation in the red region of the electromagnetic spectrum. The conversion element may include a second fluorescent material to at least partially convert the electromagnetic primary radiation into an electromagnetic secondary radiation in the red region of the electromagnetic spectrum and/or the lighting device may include a mirror or filter arranged above the conversion element.

Abstract: The invention relates to an optoelectronic component (100) having a semiconductor chip (2) for generating a primary radiation in the blue spectral range, a conversion element (4) which is arranged in the beam path of the semiconductor chip and is designed to generate a secondary radiation from the primary radiation, wherein the conversion element (4) comprises at least one first phosphor (9) and a second phosphor (10), wherein the first phosphor (9) is Sr(Sr1?xCax)Si2Al2N6:Eu2+ and/or (Sr1?yCay)[LiAl3N4]:Eu2+, where 0?x?1 and 0?y?1, wherein a total radiation (G) exiting from the component (100) is white mixed light.

Abstract: In an embodiment an optoelectronic lighting device includes a carrier, exactly one light-emitting optoelectronic semiconductor component, wherein the semiconductor component has a light emission area on at least one surface side, and wherein the semiconductor component is arranged on an upper side of the carrier, at least one functional layer arranged above the light emission area and/or adjacent to the light emission area and an edging for the functional layer, wherein the edging surrounds the functional layer when viewed in a circumferential direction, the circumferential direction being parallel to the upper side of the carrier around the functional layer, and wherein the edging is formed of a transparent material.

Abstract: The invention relates to a luminescent material having the formula (MB) (TA) 3?2x (TC) 1+2xO4?4xN4x:E, wherein: —TA is selected from a group of monovalent metals, including Li, Na, Cu, Ag and combinations thereof; —MB is selected from a group of divalent metals including Mg, Ca, Sr, Ba, Zn and combinations thereof; —TC is selected from a group of trivalent metals including B, Al, Ga, In, Y, Fe, Cr, Sc, rare earth metals and combinations thereof; —E is selected from a group including Eu, Mn, Ce, Yb and combinations thereof, and wherein 0<x<0.875. A phosphor combination may include a first phosphor and a second phosphor. The second phosphor may be a red-emitting quantum dot phosphor. The phosphor combination may optionally include a third phosphor that is a red-emitting phosphor with the formula (MB) (TA)3?2x(TC)1+2xO4?4xN4x:E. A conversion element may include the phosphor combination. An optoelectronic device may include the phosphor combination and a radiation-emitting semiconductor chip.

Abstract: An optoelectronic component is disclosed. In an embodiment, an optoelectronic component includes a semiconductor chip configured to emit primary radiation having a peak wavelength between 420 nm inclusive and 480 nm inclusive and a conversion element including a first converter material configured to partially convert the primary radiation into secondary radiation in a green range of the electromagnetic spectrum and a second converter material configured to partially convert the primary radiation into a secondary radiation in a red region of the electromagnetic spectrum, wherein the second converter material including a first red phosphor of the formula (K,Na)2(Si,Ti)F6:Mn4+ and a second red phosphor of the formula(M?)2-x?Eux?Si2Al2N6 where M?=Sr, Ca, Ba, and/or Mg and 0.001?x??0.2, and wherein the optoelectronic device is configured to emit white total radiation.

Abstract: The invention relates to a luminophore mixture which comprises at least one quantum dot luminophore and at least one functional material, the functional material is formed such that it scatters electromagnetic radiation and/or has a high density.

Abstract: A lighting device for emitting a red total radiation may be configured such that the lighting device has a semiconductor layer sequence configured to emit electromagnetic primary radiation. A conversion element may include a first fluorescent material of the formula Sr[Al2Li2O2N2]:Eu, crystallized in the tetragonal space group P42/m. The first fluorescent material may at least partially convert the electromagnetic primary radiation into an electromagnetic secondary radiation in the red region of the electromagnetic spectrum. The conversion element may include a second fluorescent material to at least partially convert the electromagnetic primary radiation into an electromagnetic secondary radiation in the red region of the electromagnetic spectrum and/or the lighting device may include a mirror or filter arranged above the conversion element.

Abstract: The invention relates to an optoelectronic component (100) having a semiconductor chip (2) for generating a primary radiation in the blue spectral range, a conversion element (4) which is arranged in the beam path of the semiconductor chip and is designed to generate a secondary radiation from the primary radiation, wherein the conversion element (4) comprises at least one first phosphor (9) and a second phosphor (10), wherein the first phosphor (9) is Sr(Sr1?xCax)Si2Al2N6:Eu2+ and/or (Sr1?yCay)[LiAl3N4]:Eu2+, where 0?x?1 and 0?y?1, wherein a total radiation (G) exiting from the component (100) is white mixed light.

Abstract: The invention relates to an optoelectronic component (100) comprising a semiconductor chip (1) for generating a primary beam in the blue spectral range, a conversion element (4) which is arranged in the beam path of the semiconductor chip (2) and is designed to generate a secondary beam from the primary beam, wherein the conversion element (4) comprises at least one first luminescent material (9) used as a conversion material, the first luminescent material (9) being (La1-xCax)3Si6(N1-yOy)11:Ce3+ with 0?x?1 and 0<y?1, wherein a total beam (G) emerging from the component (100) is white mixed light.

Abstract: An optoelectronic component is disclosed. In an embodiment, an optoelectronic component includes a semiconductor chip configured to emit primary radiation having a peak wavelength between 420 nm inclusive and 480 nm inclusive and a conversion element including a first converter material configured to partially convert the primary radiation into secondary radiation in a green range of the electromagnetic spectrum and a second converter material configured to partially convert the primary radiation into a secondary radiation in a red region of the electromagnetic spectrum, wherein the second converter material including a first red phosphor of the formula (K,Na)2(Si,Ti)F6:Mn4+ and a second red phosphor of the formula (M?)2-x?Eux?Si2Al2N6 where M?=Sr, Ca, Ba, and/or Mg and 0.001?x??0.2, and wherein the optoelectronic device is configured to emit white total radiation.

Abstract: The invention relates to an optoelectronic component (100) comprising a semiconductor chip (1) for generating a primary beam in the blue spectral range, a conversion element (4) which is arranged in the beam path of the semiconductor chip (2) and is designed to generate a secondary beam from the primary beam, wherein the conversion element (4) comprises at least one first luminescent material (9) used as a conversion material, the first luminescent material (9) being (La1-xCax)3Si6 (Ni1-yOy)11:Ce3+ with 0?x?1 and 0<y?1, wherein a total beam (G) emerging from the component (100) is white mixed light.

Abstract: A semiconductor component has a semiconductor chip that generates an electromagnetic primary radiation having a first peak wavelength, having a first conversion element, which has a quantum structure, wherein the quantum structure is formed to partially shift the primary radiation to a secondary radiation having a second peak wavelength, wherein a second conversion element is provided which has a luminescent material, wherein the luminescent material is formed to shift an electromagnetic radiation to a tertiary radiation having a dominant wavelength, wherein the first conversion element is formed to generate secondary radiation, which has a lower peak wavelength than the dominant wavelength of the tertiary radiation.

Abstract: A semiconductor component has a semiconductor chip that generates an electromagnetic primary radiation having a first peak wavelength, having a first conversion element, which has a quantum structure, wherein the quantum structure is formed to partially shift the primary radiation to a secondary radiation having a second peak wavelength, wherein a second conversion element is provided which has a luminescent material, wherein the luminescent material is formed to shift an electromagnetic radiation to a tertiary radiation having a dominant wavelength, wherein the first conversion element is formed to generate secondary radiation, which has a lower peak wavelength than the dominant wavelength of the tertiary radiation.