Abstract: A light-emitting component has a light-emitting diode chip which emits blue light with a peak wavelength of at least 450 nm and at most 465 nm. A conversion element is arranged downstream of the light-emitting diode chip in an emission direction. The conversion element contains a green fluorescent substance and a red fluorescent substance. During operation of the component the green fluorescent substance converts a part of the blue light into green light and the red fluorescent substance converts a part of the blue light into red light. The combination of the light-emitting diode chip and the conversion element thereby emits a cold white mixed light, comprising at least a part of the blue light, the green light, and the red light, wherein the cold white mixed light has a melanopic action factor of at least 0.85.

Abstract: A light-emitting component has a light-emitting diode chip which emits blue light with a peak wavelength of at least 450 nm and at most 465 nm. A conversion element is arranged downstream of the light-emitting diode chip in an emission direction. The conversion element contains a green fluorescent substance and a red fluorescent substance. During operation of the component the green fluorescent substance converts a part of the blue light into green light and the red fluorescent substance converts a part of the blue light into red light. The combination of the light-emitting diode chip and the conversion element thereby emits a cold white mixed light, comprising at least a part of the blue light, the green light, and the red light, wherein the cold white mixed light has a melanopic action factor of at least 0.85.

Abstract: A method of producing optoelectronic semiconductor components includes providing a carrier with a carrier underside and a carrier top. The carrier has a metallic core material and at least on the carrier top a metal layer. A dielectric mirror is applied to the core material. At least two holes are formed through the carrier. A ceramic layer with a thickness of at most 150 ?m at least on the carrier underside and in the holes is produced. The ceramic layer includes the core material as a component. Metallic contact layers are applied to at least subregions of the ceramic layer on the carrier underside and in the holes so that the carrier top electrically connects to the carrier underside through the holes. At least one radiation-emitting semiconductor chip is applied to the carrier top and the semiconductor chip is electronically bonded to the contact layers.

Abstract: A method of producing optoelectronic semiconductor components includes providing a carrier with a carrier underside and a carrier top, wherein the carrier has a metallic core material and at least on the carrier top a metal layer and following this a dielectric mirror are applied to the core material, forming at least two holes through the carrier, producing a ceramic layer with a thickness of at most 150 ?m at least on the carrier underside and in the holes, wherein the ceramic layer includes the core material as a component, applying metallic contact layers to at least subregions of the ceramic layer on the carrier underside and in the holes so that the carrier top electrically connects to the carrier underside through the holes, and applying at least one radiation-emitting semiconductor chip to the carrier top and electrical bonding of the semiconductor chip to the contact layers.

Abstract: A method for producing a lighting device is provided. According to the method, a plurality of semiconductor emitters arranged alongside one another are embedded in a light-transmissive filling compound apart from a side having their electrical connections, trenches are introduced into the light-transmissive filling compound at the side having the electrical connections between at least two semiconductor emitters, the side of the light-transmissive filling compound having the electrical connections, including the electrical connections, is covered with a dielectric material, electrical lines are led through the dielectric material to the electrical connections, and at least some of the trenches are severed.

Abstract: An illumination apparatus for emitting light is provided with a planar substrate, a conductor track structure on the substrate, and LEDs assembled on the substrate and connected to the conductor track structure in an electrically conductive manner. Portions of the substrate are partly separated from the remaining substrate by a separating joint that passes through the substrate in the thickness direction of the latter but is open in the direction of longitudinal extent of the latter, i.e. the portions are still respectively connected to the remaining substrate via a bridge region. The separating joints extends completely within the substrate, in each case at a distance from an edge of the substrate in relation to the surface directions thereof. With at least one of the LEDs respectively being assembled in the portions, the portions is folded out of the remaining substrate and is thus placed at an angle thereto.

Abstract: A method for producing a lighting device is provided. According to the method, a plurality of semiconductor emitters arranged alongside one another are embedded in a light-transmissive filling compound apart from a side having their electrical connections, trenches are introduced into the light-transmissive filling compound at the side having the electrical connections between at least two semiconductor emitters, the side of the light-transmissive filling compound having the electrical connections, including the electrical connections, is covered with a dielectric material, electrical lines are led through the dielectric material to the electrical connections, and at least some of the trenches are severed.

Abstract: An optoelectronic semiconductor chip includes a carrier, a semiconductor body having an active region that generates and/or receives radiation, and an insulation layer wherein the semiconductor body is fastened on the carrier with a connecting layer; the carrier extends in a vertical direction between a first main surface facing toward the semiconductor body, and a second main surface facing away from the semiconductor body, and a lateral surface connects the first main surface and the second main surface to one another; a first region of the lateral surface of the carrier has an indentation; a second region of the lateral surface runs in the vertical direction between the indentation and the second main surface; the insulation layer at least partially covers each of the semiconductor body and the first region; and the second region is free of the insulation layer.