Abstract: The disclosure describes a method for modeling excess base current in irradiated bipolar junction transistors (BJTs). The method includes quantifying defect-related electrostatic effects of a BJT device to help improve accuracy in predicting an irradiated excess base current of the BJT device. The method can be adapted to model the excess base current of a lateral P-type-N-type-P-type (LPNP) BJT device in depleted and/or accumulated surface potential states. The predicted excess base current may be used to qualify or disqualify the BJT device or an electrical circuit including the BJT device for use in a space system(s) as a commercial-off-the-shelf (COTS) component. By modeling the excess base current based on quantifying and utilizing the defect-related electrostatic effects, it may be possible to accurately predict a total-ionizing-dose (TID) response of the BJT device, thus enabling faster and lower-cost qualification of a COTS component(s) for use in the space system(s).

Abstract: A method for modeling excess base current in irradiated bipolar junction transistors (BJTs) is provided. The method includes quantifying defect-related electrostatic effects of a BJT device to help improve accuracy in predicting an irradiated excess base current of the BJT device. In examples discussed herein, the method can be adapted to model the excess base current of a lateral P-type-N-type-P-type (LPNP) BJT device in depleted and/or accumulated surface potential states. The predicted excess base current may be used to qualify or disqualify the BJT device or an electrical circuit including the BJT device for use in a space system(s) as a commercial-off-the-shelf (COTS) component. By modeling the excess base current based on quantifying and utilizing the defect-related electrostatic effects, it may be possible to accurately predict a total-ionizing-dose (TID) response of the BJT device, thus enabling faster and lower-cost qualification of a COTS component(s) for use in the space system(s).