Abstract: The invention disclosed herein relates to improvements in the collection personal health data. It further relates to a Personal Health Monitor (PHM), which may be a Personal Hand Held Monitor (PHHM), that incorporates a Signal Acquisition Device (SAD) and a processor with its attendant screen and other peripherals. The SAD is adapted to acquire signals which can be used to derive one or more measurements of parameters related to the health of a user. The computing and other facilities of the PHM with which the SAD is integrated are adapted to control and analyse signals received from the SAD. The personal health data collected by the SAD may include data related to one or more of blood pressure, pulse rate, blood oxygen level (SpO2), body temperature, respiration rate, ECG, cardiac output, heart function timing, arterial stiffness, tissue stiffness, hydration, blood viscosity, blood pressure variability, the concentration of constituents of the blood such as glucose or alcohol and the identity of the user.

Abstract: The invention disclosed herein relates to improvements in the collection personal health data. It further relates to a Personal Health Monitor (PHM), which may be a Personal Hand Held Monitor (PHHM), that incorporates a Signal Acquisition Device (SAD) and a processor with its attendant screen and other peripherals. The SAD is adapted to acquire signals which can be used to derive one or more measurements of parameters related to the health of a user. The computing and other facilities of the PHM with which the SAD is integrated are adapted to control and analyse signals received from the SAD. The personal health data collected by the SAD may include data related to one or more of blood pressure, pulse rate, blood oxygen level (SpO2), body temperature, respiration rate, ECG, cardiac output, heart function timing, arterial stiffness, tissue stiffness, hydration, the concentration of constituents of the blood such as glucose or alcohol and the identity of the user.

Abstract: The invention concerns a capacitive touch system comprising: an active stylus (800) configured so as to continuously emit a signal a capacitive touch device (200) configured to be in a reset phase (1000), followed by a finger touch sensing phase (2000), the finger touches being sensed exclusively during the finger touch sensing phase (2000). The capacitive touch device (200) is configured to sense the signal from the active stylus (800) during the reset phase (1000). The capacitive touch device (200) comprises at least one charge sensor (208, 213) comprising a charge sensor amplifier (305) comprising an input (CSi) and an output (csaout), and a switch (Sw1) between this input (CSi) and this output (csaout). The charge sensor amplifier (305) is arranged for conveying the signal of the active stylus (800) through a non-zero resistance value (Ron) of the switch (Sw1) during the reset phase (1000).

Abstract: The invention concerns a capacitive touch system comprising: an active stylus (800) configured so as to continuously emit a signal a capacitive touch device (200) configured to be in a reset phase (1000), followed by a finger touch sensing phase (2000), the finger touches being sensed exclusively during the finger touch sensing phase (2000). The capacitive touch device (200) is configured to sense the signal from the active stylus (800) during the reset phase (1000). The capacitive touch device (200) comprises at least one charge sensor (208, 213) comprising a charge sensor amplifier (305) comprising an input (CSi) and an output (csaout), and a switch (Sw1) between this input (CSi) and this output (csaout). The charge sensor amplifier (305) is arranged for conveying the signal of the active stylus (800) through a non-zero resistance value (Ron) of the switch (Sw1) during the reset phase (1000).

Abstract: A method of generating a voltage as well as an integrated circuit device (e.g., a logic device or a memory device) having a memory cell array which includes (i) a plurality of memory cells, wherein each memory cell array including (i) a plurality of memory cells, arranged in a matrix of rows and columns, and (ii) a plurality of bit lines, wherein each bit line includes a plurality of memory cells. The integrated circuit further includes voltage generation circuitry, coupled to a plurality of the bit lines, to (i) apply a first voltage to a first group of associated bit lines, and (ii) apply a second voltage to a second group of associated bit lines, and (iii) generate a third voltage by connecting the first group of associated bit lines and the second group of associated bit lines, and (iv) output the third voltage.

Abstract: A method of generating a voltage as well as an integrated circuit device (e.g., a logic device or a memory device) having a memory cell array which includes (i) a plurality of memory cells, wherein each memory cell array including (i) a plurality of memory cells, arranged in a matrix of rows and columns, and (ii) a plurality of bit lines, wherein each bit line includes a plurality of memory cells. The integrated circuit further includes voltage generation circuitry, coupled to a plurality of the bit lines, to (i) apply a first voltage to a first group of associated bit lines, and (ii) apply a second voltage to a second group of associated bit lines, and (iii) generate a third voltage by connecting the first group of associated bit lines and the second group of associated bit lines, and (iv) output the third voltage.

Abstract: A method of generating a voltage on an integrated circuit device comprising a memory cell array including (i) a plurality of memory cells, arranged in a matrix of rows and columns, and (ii) a plurality of bit lines, wherein each bit line includes a plurality of memory cells. The integrated circuit device further comprises voltage generation circuitry, coupled to a plurality of the bit lines, to (i) apply a first voltage to a first group of associated bit lines, (ii) apply a second voltage to a second group of associated bit lines, (iii) generate a third voltage by connecting the first group of associated bit lines and the second group of associated bit lines, and (iv) output the third voltage. Also, disclosed is a method of operation and/or control of such an integrated circuit device as well as such voltage generation circuitry.

Abstract: An integrated circuit device (e.g., a logic device or a memory device) having a memory cell array which includes (i) a plurality of memory cells, wherein each memory cell is programmable to store one of a plurality of data states, and (ii) a bit line, having a plurality of memory cells coupled thereto. Memory cell control circuitry applies one or more read control signals to perform a read operation wherein, in response to the read control signals, a selected memory cell conducts a current which is representative of the data state stored therein. Sense amplifier circuitry senses the data state stored in the selected memory cell using a signal which is responsive to the current conducted by the selected memory cell. Current regulation circuitry is responsively and electrically coupled to the bit line during a portion of the read operation to sink or source at least a portion of the current provided on the bit line.

Abstract: A method of generating a voltage on an integrated circuit device comprising a memory cell array including (i) a plurality of memory cells, arranged in a matrix of rows and columns, and (ii) a plurality of bit lines, wherein each bit line includes a plurality of memory cells. The integrated circuit device further comprises voltage generation circuitry, coupled to a plurality of the bit lines, to (i) apply a first voltage to a first group of associated bit lines, (ii) apply a second voltage to a second group of associated bit lines, (iii) generate a third voltage by connecting the first group of associated bit lines and the second group of associated bit lines, and (iv) output the third voltage. Also, disclosed is a method of operation and/or control of such an integrated circuit device as well as such voltage generation circuitry.

Abstract: A method of generating a voltage as well as an integrated circuit device (e.g., a logic device or a memory device) having a memory cell array which includes (i) a plurality of memory cells, wherein each memory cell array including (i) a plurality of memory cells, arranged in a matrix of rows and columns, and (ii) a plurality of bit lines, wherein each bit line includes a plurality of memory cells. The integrated circuit further includes voltage generation circuitry, coupled to a plurality of the bit lines, to (i) apply a first voltage to a first group of associated bit lines, and (ii) apply a second voltage to a second group of associated bit lines, and (iii) generate a third voltage by connecting the first group of associated bit lines and the second group of associated bit lines, and (iv) output the third voltage. Also, disclosed is a method of operation and/or control of such an integrated circuit device as well as such voltage generation circuitry.

Abstract: An integrated circuit device (e.g., a logic device or a memory device) having a memory cell array which includes (i) a plurality of memory cells, wherein each memory cell is programmable to store one of a plurality of data states, and (ii) a bit line, having a plurality of memory cells coupled thereto. Memory cell control circuitry applies one or more read control signals to perform a read operation wherein, in response to the read control signals, a selected memory cell conducts a current which is representative of the data state stored therein. Sense amplifier circuitry senses the data state stored in the selected memory cell using a signal which is responsive to the current conducted by the selected memory cell. Current regulation circuitry is responsively and electrically coupled to the bit line during a portion of the read operation to sink or source at least a portion of the current provided on the bit line.

Abstract: An integrated circuit device (e.g., a logic device or a memory device) having a memory cell array which includes (i) a plurality of memory cells, wherein each memory cell is programmable to store one of a plurality of data states, and (ii) a bit line, having a plurality of memory cells coupled thereto. Memory cell control circuitry applies one or more read control signals to perform a read operation wherein, in response to the read control signals, a selected memory cell conducts a current which is representative of the data state stored therein. Sense amplifier circuitry senses the data state stored in the selected memory cell using a signal which is responsive to the current conducted by the selected memory cell. Current regulation circuitry is responsively and electrically coupled to the bit line during a portion of the read operation to sink or source at least a portion of the current provided on the bit line.

Abstract: An integrated circuit device (e.g., a logic device or a memory device) having a memory cell array which includes (i) a plurality of memory cells, wherein each memory cell is programmable to store one of a plurality of data states, and (ii) a bit line, having a plurality of memory cells coupled thereto. Memory cell control circuitry applies one or more read control signals to perform a read operation wherein, in response to the read control signals, a selected memory cell conducts a current which is representative of the data state stored therein. Sense amplifier circuitry senses the data state stored in the selected memory cell using a signal which is responsive to the current conducted by the selected memory cell. Current regulation circuitry is responsively and electrically coupled to the bit line during a portion of the read operation to sink or source at least a portion of the current provided on the bit line.

Abstract: There are many inventions disclosed herein. In one aspect, the present inventions are directed to methods and circuitry to control, adjust, determine and/or modify the absolute and/or relative positioning or location (i.e., absolute or relative amount) of reference current which is employed by read circuitry to read the data state of a memory cell during a read operation of one or more memory cells. The control, adjustment, determination and/or modification of the reference current levels may be implemented using many different, distinct and/or diverse techniques and circuitry, including both analog and digital techniques and circuitry.

Abstract: A method of generating a voltage as well as an integrated circuit device (e.g., a logic device or a memory device) having a memory cell array which includes (i) a plurality of memory cells, wherein each memory cell array including (i) a plurality of memory cells, arranged in a matrix of rows and columns, and (ii) a plurality of bit lines, wherein each bit line includes a plurality of memory cells. The integrated circuit further includes voltage generation circuitry, coupled to a plurality of the bit lines, to (i) apply a first voltage to a first group of associated bit lines, and (ii) apply a second voltage to a second group of associated bit lines, and (iii) generate a third voltage by connecting the first group of associated bit lines and the second group of associated bit lines, and (iv) output the third voltage. Also, disclosed is a method of operation and/or control of such an integrated circuit device as well as such voltage generation circuitry.

Abstract: There are many inventions disclosed herein. In one aspect, the present inventions are directed to methods and circuitry to control, adjust, determine and/or modify the absolute and/or relative positioning or location (i.e., absolute or relative amount) of reference current which is employed by read circuitry to read the data state of a memory cell during a read operation of one or more memory cells. The control, adjustment, determination and/or modification of the reference current levels may be implemented using many different, distinct and/or diverse techniques and circuitry, including both analog and digital techniques and circuitry.

Abstract: There are many inventions disclosed herein. In one aspect, the present inventions are directed to methods and circuitry to control, adjust, determine and/or modify the absolute and/or relative positioning or location (i.e., absolute or relative amount) of reference current which is employed by sensing circuitry to sense the data state of a memory cell during a read operation of one or more memory cells. The control, adjustment, determination and/or modification of the reference current levels may be implemented using many different, distinct and/or diverse techniques and circuitry, including both analog and digital techniques and circuitry.

Abstract: There are many inventions disclosed herein. In one aspect, the present inventions are directed to methods and circuitry to control, adjust, determine and/or modify the absolute and/or relative positioning or location (i.e., absolute or relative amount) of reference current which is employed by sensing circuitry to sense the data state of a memory cell during a read operation of one or more memory cells. The control, adjustment, determination and/or modification of the reference current levels may be implemented using many different, distinct and/or diverse techniques and circuitry, including both analog and digital techniques and circuitry.

Abstract: A high voltage protection circuit (20) in a non-volatile memory includes a first transistor (22) and a second transistor (24) each formed in their own separate wells. A high voltage supply (Vhv) is provided at the drain of the second transistor (24). The source (40) of second transistor (24) is connected to the drain of first transistor (22) and to well (32), and the gate of the second transistor (24) is connected to Vdd, the main power supply to the chip. By forming the transistors in their own separate wells with the source of the second transistor (24) connected to its own well, breakdown of the circuit is governed by the sum of BVdss of the first transistor (22) and a gate induced breakdown (BVind) of the second transistor (24). With this circuit use of even a low Vdd (e.g. <3V) on the gate of the second transistor (24) is sufficient to protect against unwanted exposure to Vhs or to prevent leakage so that a higher stand-off voltage need not be generated and routed to the circuit.

Abstract: A memory system (20) comprising a memory array (22) having a plurality of memory cells (42) arranged in rows and columns. Each memory cell (42) has a control terminal. A voltage controller (26) provides to the control terminal of a memory cell a first verify voltage signal (Vabse) during a first verify cycle or a second verify voltage signal (Vabsp) during a second verify cycle. The first verify voltage signal (Vabse) having a predetermined voltage level that corresponds substantially to a threshold voltage level of a memory cell in the array in a first state and the second verify voltage signal (Vabsp) having a predetermined voltage level that corresponds substantially to a threshold voltage level of a memory cell in the array in a second state.