Patents by Inventor Philippe Bergonzo

Philippe Bergonzo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9962540
    Abstract: A biocompatible carbon based electrode, and its preparation process are described. The electrode is formed by first and second biocompatible chemically oxygen terminated or H-terminated carbon-based materials. The first material is configured to promote the growth or at least the direct interfacing of adult neurons on the first material without substantially promoting the growth and direct interfacing of glial cells on the first material. The second material presents a peptide coating to promote the growth and at least the direct interfacing of adult glial cells.
    Type: Grant
    Filed: December 24, 2013
    Date of Patent: May 8, 2018
    Assignees: UNIVERSITE PIERRE ET MARIE CURIE (PARIS 6), CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Serge Picaud, Amel Bendali, Philippe Bergonzo, Valerie Forster-Fradot, Jose-Alain Sahel
  • Publication number: 20150343202
    Abstract: A biocompatible carbon based electrode, and its preparation process are described. The electrode is formed by first and second biocompatible chemically oxygen terminated or H-terminated carbon-based materials. The first material is configured to promote the growth or at least the direct interfacing of adult neurons on the first material without substantially promoting the growth and direct interfacing of glial cells on the first material. The second material presents a peptide coating to promote the growth and at least the direct interfacing of adult glial cells.
    Type: Application
    Filed: December 24, 2013
    Publication date: December 3, 2015
    Applicant: UNIVERSITE PIERRE ET MARIE CURIE (PARIS 6)
    Inventors: Serge PICAUD, Amel BENDALI, Philippe BERGONZO, Valerie FOSTER-FRADOT, Jose-Alain SAHEL
  • Patent number: 8801942
    Abstract: A method for manufacturing an intraocular retinal implant including: providing a mold capable of supporting growth of a layer of doped diamond, the mold including, on one face, elements all depressed or all projecting with respect to the surface of the face, and constituting a pattern cavity for the electrodes of the implant which it is desired to obtain; producing the doped diamond electrodes by growing a layer of doped diamond in all or part of a space occupied by the pattern cavity elements; forming a first insulating layer on the face of the mold including the pattern cavity; producing interconnection lines by depositing an electrically conductive material at least in spaces not covered by the first insulating layer; forming a second insulating layer on the mold face including the pattern cavity, the second layer covering the interconnection lines, the first and second insulating layers forming a flexible plate of the implant; removing the mold.
    Type: Grant
    Filed: June 8, 2011
    Date of Patent: August 12, 2014
    Assignees: Commissariat a l'energie atomique et aux energies alternatives, Chambre de Commerce et d'Industrie de Paris (ESIEE Paris)
    Inventors: Emmanuel Scorsone, Philippe Bergonzo, Gaelle Lissorgues, Lionel Rousseau, Michel Bonnauron, Christine Alice Regine Helene Terrades, Serge Anne Daniel Bonnauron, Lucas Claude Jean Francois Bonnauron, Tanguy Richard Yves Bonnauron
  • Patent number: 8774938
    Abstract: The invention relates to an implant which includes, in order to electrically stimulate a nerve structure, in particular the retina, an electrically insulating substrate (1), a array of recesses (2) formed in an upper surface of the substrate, stimulation electrodes (3) arranged at the bottom of the recesses, and an electrically conductive layer forming a ground plane (4) at the upper portion of the recesses. The sizes of the recesses and of the electrodes of the implant are such that the spatial selectivity of the stimulation current applied to the nerve structure is maximized.
    Type: Grant
    Filed: April 29, 2011
    Date of Patent: July 8, 2014
    Assignee: Universite Pierre et Marie Curie (Paris 6)
    Inventors: Henri Lorach, Milan Djilas, Blaise Yvert, Philippe Bergonzo, Gaelle Lissorgues, Lionel Rousseau, Ryad Benjamin Benosman, Serge Picaud, Jose Sahel, Siohoi Ieng
  • Publication number: 20130228547
    Abstract: A method for manufacturing an intraocular retinal implant including: providing a mold capable of supporting growth of a layer of doped diamond, the mold including, on one face, elements all depressed or all projecting with respect to the surface of the face, and constituting a pattern cavity for the electrodes of the implant which it is desired to obtain; producing the doped diamond electrodes by growing a layer of doped diamond in all or part of a space occupied by the pattern cavity elements; forming a first insulating layer on the face of the mold including the pattern cavity; producing interconnection lines by depositing an electrically conductive material at least in spaces not covered by the first insulating layer; forming a second insulating layer on the mold face including the pattern cavity, the second layer covering the interconnection lines, the first and second insulating layers forming a flexible plate of the implant; removing the mold.
    Type: Application
    Filed: June 8, 2011
    Publication date: September 5, 2013
    Applicants: Chambre de Commerce et d'Industrie de Paris (ESIEE PARIS), Commissariat a l'energie atomeique et aux energies alternatives
    Inventors: Emmanuel Scorsone, Philippe Bergonzo, Mathias Bonnauron
  • Publication number: 20130096660
    Abstract: The invention relates to an implant which includes, in order to electrically stimulate a nerve structure, in particular the retina, an electrically insulating substrate (1), a array of recesses (2) formed in an upper surface of the substrate, stimulation electrodes (3) arranged at the bottom of the recesses, and an electrically conductive layer forming a ground plane (4) at the upper portion of the recesses.
    Type: Application
    Filed: April 29, 2011
    Publication date: April 18, 2013
    Applicant: UNIVERSITE PIERRE ET MARIE CURIE (PARIS 6)
    Inventors: Henri Lorach, Milan Djilas, Blaise Yvert, Philippe Bergonzo, Gaelle Lissorgues, Lionel Rousseau, Ryad Benjamin Benosman, Serge Picaud, Jose Sahel, Siohoi Ieng
  • Publication number: 20110156057
    Abstract: A semiconductor substrate including at least a layer based on doped diamond with a thickness greater than or equal to approximately 10 ?m, a layer based on at least one semiconductor or a stack of layers including the semiconductor-based layer, and a layer based on intrinsic diamond disposed against the layer based on doped diamond, between the layer based on doped diamond and the semiconductor-based layer.
    Type: Application
    Filed: July 28, 2009
    Publication date: June 30, 2011
    Applicant: COMM. A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALT.
    Inventors: Jean-Paul Mazellier, Francois Andrieu, Philippe Bergonzo, Samuel Saada
  • Publication number: 20080061235
    Abstract: A detector that includes a sensing plate formed of a thin synthetic diamond plate is provided. The detector is characterized in that it includes means for heating the sensing plate. The heating means comprises a thin heating plate whose material is essentially constituted of carbon atoms. The invention also relates to a device that includes a detector of the aforementioned type, a measuring method that uses such a detector, and a method for producing this detector.
    Type: Application
    Filed: September 1, 2005
    Publication date: March 13, 2008
    Applicant: Commissariat A L'Energie Atomique
    Inventors: Marie-Josephine Guerrero, Philippe Bergonzo, Dominique Tromson