Patents by Inventor Philippe Bois

Philippe Bois has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10808214
    Abstract: A photobioreactor system and a process for its use is illustrated, whereby water and nutrients from multiple sources are balanced (mixed using aeration) to the specific requirements of the particular photosynthetic organism strain used, sterilized, further mixed to balance the system and seeded with the photosynthetic microorganism, e.g. microalgae (dilution of a concentrated stock or added to an existing algal biomass). In accordance with such an embodiment, the algal biomass is then grown for a most efficient number of hours in a totally controlled environment where temperature (using aeration, an internal coil cooling system, or a combination thereof), pH (via CO2 delivery) and light delivery (using internal lighting directly inside the algal biomass) are optimized to the algal strain grown.
    Type: Grant
    Filed: February 20, 2019
    Date of Patent: October 20, 2020
    Assignee: Avespa Corporation
    Inventors: David Punchard, Philippe Bois, Angela Cortina Burgueno
  • Patent number: 10464702
    Abstract: A form-fill-seal machine and a method for manufacturing and filling a bag (100) having a drawstring tape or cord. The form-fill-seal machine includes a device to guide a film on the machine. A conveying device positions at least one drawstring tape or cord on the film. A folding device folds the film to form a first sheet and a second sheet of the bag. First and second welding jaws weld the first sheet and the second sheet to close two sides of the bag and leave a third side of the bag open. A filling chute fills the bag by the third side of the bag. Third welding jaws close the bag by sealing the third side.
    Type: Grant
    Filed: May 13, 2015
    Date of Patent: November 5, 2019
    Assignee: S2F FLEXICO
    Inventors: Henri Bois, Philippe Georges, Stephen Buygnet
  • Publication number: 20190185796
    Abstract: A photobioreactor system and a process for its use is illustrated, whereby water and nutrients from multiple sources are balanced (mixed using aeration) to the specific requirements of the particular photosynthetic organism strain used, sterilized, further mixed to balance the system and seeded with the photosynthetic microorganism, e.g. microalgae (dilution of a concentrated stock or added to an existing algal biomass). In accordance with such an embodiment, the algal biomass is then grown for a most efficient number of hours in a totally controlled environment where temperature (using aeration, an internal coil cooling system, or a combination thereof), pH (via CO2 delivery) and light delivery (using internal lighting directly inside the algal biomass) are optimized to the algal strain grown.
    Type: Application
    Filed: February 20, 2019
    Publication date: June 20, 2019
    Inventors: David Punchard, Philippe Bois, Angela Cortina Burgueno
  • Patent number: 10246674
    Abstract: A photobioreactor system and a process for its use is illustrated, whereby water and nutrients from multiple sources are balanced (mixed using aeration) to the specific requirements of the particular photosynthetic organism strain used, sterilized, further mixed to balance the system and seeded with the photosynthetic microorganism, e.g. microalgae (dilution of a concentrated stock or added to an existing algal biomass). In accordance with such an embodiment, the algal biomass is then grown for a most efficient number of hours in a totally controlled environment where temperature (using aeration, an internal coil cooling system, or a combination thereof), pH (via CO2 delivery) and light delivery (using internal lighting directly inside the algal biomass) are optimized to the algal strain grown.
    Type: Grant
    Filed: January 26, 2017
    Date of Patent: April 2, 2019
    Assignee: Algal Research Center, LLC
    Inventors: David Punchard, Philippe Bois, Angela Cortina Burgueño
  • Publication number: 20180233619
    Abstract: Disclosed is a photodetector which includes, in series along a stacking direction: a first layer forming a substrate of a first semiconductor material; a second layer forming a photoabsorbent layer of a second semiconductor material having a second gap; a third layer forming a barrier layer of a third semiconductor material; and a fourth layer forming a window layer of a fourth semiconductor material, the first material, the third material and the fourth material each having a gap larger than the second gap, the fourth material being n-doped or non-doped and the third material being non-doped or lightly p-doped when the second material is n-doped, and the fourth material being p-doped or non-doped and the third material being non-doped or lightly n-doped when the second material is p-doped.
    Type: Application
    Filed: September 23, 2016
    Publication date: August 16, 2018
    Inventors: Jean-Luc REVERCHON, Philippe BOIS
  • Patent number: 9781370
    Abstract: The invention relates to a pixel of a CMOS imager, the pixel comprising: an infrared photodiode suitable for generating an electric current when it is exposed to an optical radiation having a wavelength greater than 950 nanometers, a conversion circuit able to receive electrons and deliver a voltage with a value varying as a function of the number of received electrons, a first switch connected between the infrared photodiode and the conversion circuit.
    Type: Grant
    Filed: September 17, 2014
    Date of Patent: October 3, 2017
    Assignees: THALES, COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Jean-Luc Raymond Reverchon, Eric Belhaire, Philippe Bois
  • Publication number: 20170137764
    Abstract: A photobioreactor system and a process for its use is illustrated, whereby water and nutrients from multiple sources are balanced (mixed using aeration) to the specific requirements of the particular photosynthetic organism strain used, sterilized, further mixed to balance the system and seeded with the photosynthetic microorganism, e.g. microalgae (dilution of a concentrated stock or added to an existing algal biomass). In accordance with such an embodiment, the algal biomass is then grown for a most efficient number of hours in a totally controlled environment where temperature (using aeration, an internal coil cooling system, or a combination thereof), pH (via CO2 delivery) and light delivery (using internal lighting directly inside the algal biomass) are optimized to the algal strain grown.
    Type: Application
    Filed: January 26, 2017
    Publication date: May 18, 2017
    Applicant: AVESPA HOLDINGS, LLC
    Inventors: David PUNCHARD, Philippe BOIS, Angela CORTINA BURGUEÑO
  • Publication number: 20160241801
    Abstract: The invention relates to a pixel of a CMOS imager, the pixel comprising: an infrared photodiode suitable for generating an electric current when it is exposed to an optical radiation having a wavelength greater than 950 nanometers, a conversion circuit able to receive electrons and deliver a voltage with a value varying as a function of the number of received electrons, and a first switch connected between the infrared photodiode and the conversion circuit.
    Type: Application
    Filed: September 17, 2014
    Publication date: August 18, 2016
    Inventors: Jean-Luc Raymond REVERCHON, Eric BELHAIRE, Philippe BOIS
  • Patent number: 9379158
    Abstract: This optical detector unit is a hybrid unit operating in a given wavelength range and includes, superposed, a first optical detector comprising detecting elements formed in a semiconductor structure, each detecting element being intended for converting a flux of incident photons into an electrical signal; and a first read out circuit, for reading the electrical signal from each detecting element. The optical detector unit furthermore has an imaging system with a second optical detector intended for increasing the operating wavelength range of the optical detector unit and a second read out circuit for reading the electrical signals from the detecting elements of the second optical detector. The first and second read out circuit are integrated together, so as to form a common read out circuit.
    Type: Grant
    Filed: November 29, 2012
    Date of Patent: June 28, 2016
    Assignees: THALES, COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Benoit Giffard, Xavier Hugon, Norbert Moussy, Jean-Luc Reverchon, Philippe Bois
  • Publication number: 20140346356
    Abstract: This optical detector unit is a hybrid unit operating in a given wavelength range and includes, superposed, a first optical detector comprising detecting elements formed in a semiconductor structure, each detecting element being intended for converting a flux of incident photons into an electrical signal; and a first read out circuit, for reading the electrical signal from each detecting element. The optical detector unit furthermore has an imaging system with a second optical detector intended for increasing the operating wavelength range of the optical detector unit and a second read out circuit for reading the electrical signals from the detecting elements of the second optical detector. The first and second read out circuit are integrated together, so as to form a common read out circuit.
    Type: Application
    Filed: November 29, 2012
    Publication date: November 27, 2014
    Applicants: Thales, COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Benoit Giffard, Xavier Hugon, Norbert Moussy, Jean-Luc Reverchon, Philippe Bois
  • Patent number: 8610171
    Abstract: A semiconductor-based SWIR infrared detector sensitive to wavelengths shorter than about 2.5 microns comprises a stack of semiconductor layers based on III-V materials forming a PIN photodiode. The stack includes a naked electrical contact, called a lower electrical contact, serving as an optical window; and a detection layer sensitive to said wavelengths. The lower contact comprises at least one layer of indirect-bandgap III-V material(s) doped n-type, pseudomorphic or lattice matched with a substrate intended to serve as a temporary substrate possibly being made of a III-V material such as InP or GaAs or of silicon or germanium.
    Type: Grant
    Filed: December 8, 2009
    Date of Patent: December 17, 2013
    Assignee: Thales
    Inventors: Philippe Bois, Olivier Parillaud, Xavier Marcadet, Michel Papuchon
  • Patent number: 8378301
    Abstract: The invention relates to a multispectral imaging device comprising a multiple-quantum-well structure operating on inter-sub-band transitions by absorbing radiation at a wavelength ? lying within a set of wavelengths to which said structure is sensitive, said structure comprising a matrix of individual detection pixels, characterized in that the matrix is organized in subsets (Eij) of four individual detection pixels, a first individual detection pixel (P?1) comprising a first diffraction grating (R?1) sensitive to a first subset of wavelengths, a second individual detection pixel (P?2) comprising a second diffraction grating (R?2) sensitive to a second subset of wavelengths, a third individual detection pixel (P?3) comprising a third diffraction grating (R?3) sensitive to a third subset of wavelengths and a fourth individual detection pixel (P??) not comprising a wavelength-selective diffraction grating, the first, second and third subsets of wavelengths belonging to the set of wavelengths to which said struc
    Type: Grant
    Filed: October 23, 2009
    Date of Patent: February 19, 2013
    Assignee: Thales
    Inventors: Alexandru Nedelcu, Philippe Bois, Eric Costard
  • Publication number: 20110248316
    Abstract: A semiconductor-based SWIR infrared detector sensitive to wavelengths shorter than about 2.5 microns comprises a stack of semiconductor layers based on III-V materials forming a PIN photodiode. The stack includes a naked electrical contact, called a lower electrical contact, serving as an optical window; and a detection layer sensitive to said wavelengths. The lower contact comprises at least one layer of indirect-bandgap III-V material(s) doped n-type, pseudomorphic or lattice matched with a substrate intended to serve as a temporary substrate possibly being made of a III-V material such as InP or GaAs or of silicon or germanium.
    Type: Application
    Filed: December 8, 2009
    Publication date: October 13, 2011
    Applicant: THALES
    Inventors: Philippe Bois, Olivier Parillaud, Xavier Marcadet, Michel Papuchon
  • Patent number: 7741594
    Abstract: The invention relates to a detector comprising a multiple quantum well structure operating on interband or intersubband transitions by absorption of radiation having a wavelength ? having a polarization comprising a component perpendicular to the plane of the multiple quantum well structure, and comprising optical coupling means for coupling said radiation, wherein the coupling means comprise a set of first diffractive lamellar features that are distributed along at least a first direction and a set of second diffractive lamellar features that are distributed along at least a second direction, said first and second directions being mutually perpendicular and lying in a plane parallel to the plane of the multiple quantum well structure.
    Type: Grant
    Filed: May 26, 2004
    Date of Patent: June 22, 2010
    Assignee: Thales
    Inventors: Philippe Bois, Eric Costard, Alfredo De Rossi, Alexandru Nedelcu
  • Publication number: 20100110433
    Abstract: The invention relates to a polarimetric imaging device comprising a multiple-quantum-well structure operating on inter-sub-band transitions by absorbing radiation at a wavelength ?, said structure comprising a matrix of individual detection pixels, characterized in that the matrix is organized in subsets of four individual pixels, a first pixel comprising a first diffraction grating (RP1) sensitive to a first polarization, a second polarimetric pixel comprising a second diffraction grating (RP2) sensitive to a second polarization orthogonal to the first polarization, a third polarimetric pixel comprising a third diffraction grating (RP3) sensitive to a third polarization oriented at an angle between the first and second polarizations and a fourth pixel not comprising a polarization-selective diffraction rating (R2D).
    Type: Application
    Filed: October 23, 2009
    Publication date: May 6, 2010
    Applicant: Thales
    Inventors: Alexandru Nedelcu, Philippe Bois, Eric Costard
  • Publication number: 20100108861
    Abstract: The invention relates to a multispectral imaging device comprising a multiple-quantum-well structure operating on inter-sub-band transitions by absorbing radiation at a wavelength ? lying within a set of wavelengths to which said structure is sensitive, said structure comprising a matrix of individual detection pixels, characterized in that the matrix is organized in subsets (Eij) of four individual detection pixels, a first individual detection pixel (P?1) comprising a first diffraction grating (R?1) sensitive to a first subset of wavelengths, a second individual detection pixel (P?2) comprising a second diffraction grating (R?2) sensitive to a second subset of wavelengths, a third individual detection pixel (P?3) comprising a third diffraction grating (R?3) sensitive to a third subset of wavelengths and a fourth individual detection pixel (P??) not comprising a wavelength-selective diffraction grating, the first, second and third subsets of wavelengths belonging to the set of wavelengths to which said struc
    Type: Application
    Filed: October 23, 2009
    Publication date: May 6, 2010
    Applicant: Thales
    Inventors: Alexandru Nedelcu, Philippe Bois, Eric Costard
  • Patent number: 7687760
    Abstract: The invention relates to an optical coupling structure intended to couple electromagnetic radiation to the surface of a photodetector, wherein a coupling surface paved along mutually perpendicular first and second directions by a set of N series (M1i, M2i, . . . . Mni) of first features, second features, . . . nth features, the features being identical within any one series, the features being distributed along the first and second directions, the distance between the centers of two adjacent features or the inter-reticular distances between two adjacent features being variable. The subject of the invention is also a detector or a laser source comprising said coupling structure.
    Type: Grant
    Filed: May 26, 2004
    Date of Patent: March 30, 2010
    Assignee: Thales
    Inventors: Philippe Bois, Nadia Briere De L'Isle, Eric Costard, Alfredo De Rossi
  • Patent number: 7622703
    Abstract: The field of the invention is that of photodetectors (10), and more precisely so-called quantum well photodetectors operating in the medium infrared, known by the acronym QWIP standing for Quantum Well Infrared Photodetector. It is an object of the invention to increase the detectivity of the detectors by significantly reducing the surface area of the detection zone while conserving the incident flux. This result is obtained by arranging a structure (4) or grating on the active zone (31) of the photodetector (10), which couples the incident wave and confines it on the active zone (31). The major features of this structure (4) or this grating are that it comprises patterns or grooves having a first spatial frequency and a second spatial frequency, and also comprising a central defect.
    Type: Grant
    Filed: December 7, 2004
    Date of Patent: November 24, 2009
    Assignee: Thales
    Inventors: Alfredo De Rossi, Mathieu Carras, Philippe Bois
  • Publication number: 20070085114
    Abstract: The field of the invention is that of photodetectors (10), and more precisely so-called quantum well photodetectors operating in the medium infrared, known by the acronym QWIP standing for Quantum Well Infrared Photodetector. It is an object of the invention to increase the detectivity of the detectors by significantly reducing the surface area of the detection zone while conserving the incident flux. This result is obtained by arranging a structure (4) or grating on the active zone (31) of the photodetector (10), which couples the incident wave and confines it on the active zone (31). The major features of this structure (4) or this grating are that it comprises patterns or grooves having a first spatial frequency and a second spatial frequency, and also comprising a central defect.
    Type: Application
    Filed: December 7, 2004
    Publication date: April 19, 2007
    Inventors: Alfredo De Rossi, Mathieu Carras, Philippe Bois
  • Publication number: 20060289728
    Abstract: The invention relates to a detector comprising a multiple quantum well structure operating on interband or intersubband transitions by absorption of radiation having a wavelength ? having a polarization comprising a component perpendicular to the plane of the multiple quantum well structure, and comprising optical coupling means for coupling said radiation, wherein the coupling means comprise a set of first diffractive lamellar features that are distributed along at least a first direction and a set of second diffractive lamellar features that are distributed along at least a second direction, said first and second directions being mutually perpendicular and lying in a plane parallel to the plane of the multiple quantum well structure.
    Type: Application
    Filed: May 26, 2004
    Publication date: December 28, 2006
    Applicant: THALES
    Inventors: Philippe Bois, Eric Costard, Alfredo De Rossi, Alexandru Nedelcu