Abstract: Proposed is a medium-voltage distribution switchboard (100), comprising: a set of cells (10-A, 10-B), a central unit (1) connected to two communication buses (B1, B2) and configured to deliver a switching request asking for current to be switched, each cell (10-A,10-B) respectively comprising: a first sensor (5-A, 5-B) configured to measure a first physical parameter representative of the electrical current, an interface unit (2-A, 2-B) connected to the first bus (B1) and configured to deliver the signal of the first sensor (5-A, 5-B) to the central unit (1), a second sensor (6-A, 6-B) configured to measure a second physical parameter representative of operating conditions of the cell (10-A, 10-B), an acquisition unit (3-A, 3-B) connected to the second bus (B2) and configured to deliver the signal of the second sensor (6-A, 6-B) to the central unit (1), the interface unit (2-A, 2-B) being configured to switch the current of the cell (10-A, 10-B) on receipt of the switching request.

Abstract: A method for determining a quantity of a gas contained in a tank of an insulated switchgear. The method includes: (i) acquiring a first temperature and a second temperature measured by a gas temperature sensor respectively at a first instant and at a second instant during a calibration phase; (ii) acquiring a first pressure and a second pressure measured by a gas pressure sensor at the first instant and at the second instant; (iii) determining a steady-state model of the tank thermal exchanges from the first and second acquired temperature and from the first and second acquired pressure; (iv) acquiring a gas temperature, a gas pressure and an ambient temperature during a measurement phase and (v) calculating the quantity of the gas contained in the tank from the acquired gas temperature, the acquired gas pressure, the acquired ambient temperature and from the determined steady state model.

Abstract: A device comprising a first layer, a trench partially running through the first layer extending from a first side, and being filled with a conductive etch stop layer, a conductive barrier layer covering the conductive etch stop layer, and a track of a first metallic material in contact with the barrier layer, in the trench, an opening in the first layer extending from a second side, opposite to the first side, of the dielectric or semiconductor layer, the opening running through the first layer all the way to the etch stop layer, and a first layer of a second metallic material covering the walls of the opening.

Abstract: The present disclosure relates to a method for manufacturing a pixel by: depositing an insulating layer on an exposed face of an interconnect structure of an integrated circuit, the interconnect structure having a conductive element flush with said exposed face; etching an opening passing through the insulating layer to the conductive element; depositing an electrode layer on and in contact with the conductive element and the insulating layer; defining an electrode by removing, by etching, part of the electrode layer resting on the insulating layer; and depositing a film configured to convert photons into electron-hole pairs when a ray at an operating wavelength of the pixel reaches the pixel.

Abstract: The present disclosure relates to a method for manufacturing a pixel by: depositing an insulating layer on an exposed face of an interconnect structure of an integrated circuit, the interconnect structure having a conductive element flush with said exposed face; etching an opening passing through the insulating layer to the conductive element; depositing an electrode layer on and in contact with the conductive element and the insulating layer; defining an electrode by removing, by etching, part of the electrode layer resting on the insulating layer; and depositing a film configured to convert photons into electron-hole pairs when a ray at an operating wavelength of the pixel reaches the pixel.

Abstract: An integrated circuit includes a substrate with an active area, a first insulating layer, a second insulating layer, and a phase-change material. The integrated circuit further includes a heating element in an L-shape, with a long side in direct physical contact with the phase-change material and a short side in direct physical contact with a via. The heating element is surrounded by first, second, and third insulating spacers, with the first insulating spacer having a planar first sidewall in contact with the long side of the heating element, a convex second sidewall, and a planar bottom face in contact with the short side of the heating element. The second and third insulating spacers are in direct contact with the first insulating spacer and the long side of the heating element.

Abstract: A monitored switch gear device that includes a switch gear, a plurality of magnets, a magnetic field sensor and a processing circuitry. The switch gear includes an opening/closing mechanism adapted to selectively open and close an electrical circuit. The opening/closing mechanism includes a pivotally mounted shaft configured to rotate about a pivot axis as the opening/closing mechanism moves between an open and a closed state. The magnets of the plurality of magnets are spaced from each other and fixedly attached to the shaft. The magnetic field sensor senses a magnetic field generated by each magnet of the plurality of magnets as the shaft pivots. Each magnet of the plurality of magnets defines a different angular position of the shaft detected by the magnetic field sensor in which the magnetic field sensor senses a respective magnet of the plurality of magnets.

Abstract: A method for determining an operational status of a switching device for switching an electrical unit including a first circuit and a second circuit, each circuit respectively including: a vacuum breaker including a fixed electrode and a mobile electrode; and a control device connected to the mobile electrode via an elastic device. The method including: for each of the first and second circuits, determining a transition instant at which the mobile electrode comes into contact with the fixed electrode; determining a difference between the transition instant of the first vacuum breaker and the transition instant of the second vacuum breaker; determining that the operational status is a first status known as “nominal synchronization” if the difference is less than a threshold; and determining that the operational status is a second status known as “abnormal synchronization” if the difference is greater than the threshold.

Abstract: A method for manufacturing an interconnection structure for an integrated circuit is provided. The integrated circuit includes a first insulating layer, a second insulating layer, and a third insulating layer. Electrical contacts pass through the first insulating layer, and a component having an electrical contact region is located in the second insulating layer. The method includes etching a first opening in the third layer, vertically aligned with the contact region. A fourth insulating layer is deposited to fill in the opening, and a second opening is etched to the contact region by passing through the opening in the third insulating layer. A metal level is formed by filling in the second opening with a metal.

Abstract: A method for determining a quantity of a gas contained in a tank of an insulated switchgear. The method includes: (i) acquiring a first temperature and a second temperature measured by a gas temperature sensor respectively at a first instant and at a second instant during a calibration phase; (ii) acquiring a first pressure and a second pressure measured by a gas pressure sensor at the first instant and at the second instant; (iii) determining a steady-state model of the tank thermal exchanges from the first and second acquired temperature and from the first and second acquired pressure; (iv) acquiring a gas temperature, a gas pressure and an ambient temperature during a measurement phase and (v) calculating the quantity of the gas contained in the tank from the acquired gas temperature, the acquired gas pressure, the acquired ambient temperature and from the determined steady state model.

Abstract: An integrated circuit includes a substrate with an active area, a first insulating layer, a second insulating layer, and a phase-change material. The integrated circuit further includes a heating element in an L-shape, with a long side in direct physical contact with the phase-change material and a short side in direct physical contact with a via. The heating element is surrounded by first, second, and third insulating spacers, with the first insulating spacer having a planar first sidewall in contact with the long side of the heating element, a convex second sidewall, and a planar bottom face in contact with the short side of the heating element. The second and third insulating spacers are in direct contact with the first insulating spacer and the long side of the heating element.

Abstract: A method for manufacturing an interconnection structure for an integrated circuit is provided. The integrated circuit includes a first insulating layer, a second insulating layer, and a third insulating layer. Electrical contacts pass through the first insulating layer, and a component having an electrical contact region is located in the second insulating layer. The method includes etching a first opening in the third layer, vertically aligned with the contact region. A fourth insulating layer is deposited to fill in the opening, and a second opening is etched to the contact region by passing through the opening in the third insulating layer. A metal level is formed by filling in the second opening with a metal.

Abstract: A monitored switch gear device that includes a switch gear, a plurality of magnets, a magnetic field sensor and a processing circuitry. The switch gear includes an opening/closing mechanism adapted to selectively open and close an electrical circuit. The opening/closing mechanism includes a pivotally mounted shaft configured to rotate about a pivot axis as the opening/closing mechanism moves between an open and a closed state. The magnets of the plurality of magnets are spaced from each other and fixedly attached to the shaft. The magnetic field sensor senses a magnetic field generated by each magnet of the plurality of magnets as the shaft pivots. Each magnet of the plurality of magnets defines a different angular position of the shaft detected by the magnetic field sensor in which the magnetic field sensor senses a respective magnet of the plurality of magnets.

Abstract: A method for manufacturing an interconnection structure for an integrated circuit is provided. The integrated circuit includes a first insulating layer, a second insulating layer, and a third insulating layer. Electrical contacts pass through the first insulating layer, and a component having an electrical contact region is located in the second insulating layer. The method includes etching a first opening in the third layer, vertically aligned with the contact region. A fourth insulating layer is deposited to fill in the opening, and a second opening is etched to the contact region by passing through the opening in the third insulating layer. A metal level is formed by filling in the second opening with a metal.

Abstract: An electronic chip includes memory cells made of a phase-change material and a transistor. First and second vias extend from the transistor through an intermediate insulating layer to a same height. A first metal level including a first interconnection track in contact with the first via is located over the intermediate insulating layer. A heating element for heating the phase-change material is located on the second via, and the phase-change material is located on the heating element. A second metal level including a second interconnection track is located above the phase-change material. A third via extends from the phase-change material to the second interconnection track.

Abstract: A method for determining an operational status of a switching device for switching an electrical unit including a first circuit and a second circuit, each circuit respectively including: a vacuum breaker including a fixed electrode and a mobile electrode; and a control device connected to the mobile electrode via an elastic device. The method including: for each of the first and second circuits, determining a transition instant at which the mobile electrode comes into contact with the fixed electrode; determining a difference between the transition instant of the first vacuum breaker and the transition instant of the second vacuum breaker; determining that the operational status is a first status known as “nominal synchronization” if the difference is less than a threshold; and determining that the operational status is a second status known as “abnormal synchronization” if the difference is greater than the threshold.

Abstract: Method for detecting a state of a switching unit, the switching unit comprising an element that is movable between a first position and a second position.

Abstract: The present disclosure relates to a method for manufacturing a pixel by: depositing an insulating layer on an exposed face of an interconnect structure of an integrated circuit, the interconnect structure having a conductive element flush with said exposed face; etching an opening passing through the insulating layer to the conductive element; depositing an electrode layer on and in contact with the conductive element and the insulating layer; defining an electrode by removing, by etching, part of the electrode layer resting on the insulating layer; and depositing a film configured to convert photons into electron-hole pairs when a ray at an operating wavelength of the pixel reaches the pixel.

Abstract: A method for manufacturing an interconnection structure for an integrated circuit is provided. The integrated circuit includes a first insulating layer, a second insulating layer, and a third insulating layer. Electrical contacts pass through the first insulating layer, and a component having an electrical contact region is located in the second insulating layer. The method includes etching a first opening in the third layer, vertically aligned with the contact region. A fourth insulating layer is deposited to fill in the opening, and a second opening is etched to the contact region by passing through the opening in the third insulating layer. A metal level is formed by filling in the second opening with a metal.

Abstract: Method for detecting a state of a switching unit, the switching unit comprising an element that is movable between a first position and a second position.