Abstract: A fabrication method comprising: forming a mask of an amorphous material over a crystalline surface of a substrate, the mask having a pattern of openings defining areas of an active region in which one or more components of one or more active devices are to be formed, the mask further defining a non-active region in which no active devices are to be formed; and forming a deposition material through the mask by an epitaxial growth process. The deposition material thus forms in the openings of the active region. The pattern of openings through the mask further comprises one or more reservoirs formed in the non-active region, each of the reservoirs being connected by the pattern of openings in the mask to at least one of the areas in the active region, and the deposition material forming in the reservoirs as part of the epitaxial growth.

Abstract: There is provided a method for fabricating a device. On a top surface of a substrate, a first layer of a first deposition material is formed. The first layer of the first deposition material is patterned to create a seed pattern of remaining first deposition material. Homoepitaxy is used to grow a second layer of the first deposition material on the seed pattern.

Abstract: There is provided a method for fabricating a device. On a top surface of a substrate, a first layer of a first deposition material is formed. The first layer of the first deposition material is patterned to create a seed pattern of remaining first deposition material. Homoepitaxy is used to grow a second layer of the first deposition material on the seed pattern.

Abstract: In a masking phase, a first segment of an amorphous mask is formed on an underlying layer of a substrate. The first segment comprises a first set of trenches exposing the underlying layer. In the masking phase, a second segment of the amorphous mask is formed on the underlying layer. The second segment comprises a second set of trenches exposing the underlying layer. The segments are non-overlapping. An open end of one of the first set of trenches faces an open end of one of the second set of trenches, but the ends are separated by a portion of the amorphous mask. In a semiconductor growth phase, semiconductor material is grown, by selective area growth, in the first and second sets of trenches to form first and second sub-networks of nanowires on the underlying layer. The first and second sub-networks of nanowires are joined to form a single nanowire network.

Abstract: In a masking phase, a first segment of an amorphous mask is formed on an underlying layer of a substrate. The first segment comprises a first set of trenches exposing the underlying layer. In the masking phase, a second segment of the amorphous mask is formed on the underlying layer. The second segment comprises a second set of trenches exposing the underlying layer. The segments are non-overlapping. An open end of one of the first set of trenches faces an open end of one of the second set of trenches, but the ends are separated by a portion of the amorphous mask. In a semiconductor growth phase, semiconductor material is grown, by selective area growth, in the first and second sets of trenches to form first and second sub-networks of nanowires on the underlying layer. The first and second sub-networks of nanowires are joined to form a single nanowire network.

Abstract: In a masking phase, a first segment of an amorphous mask is formed on an underlying layer of a substrate. The first segment comprises a first set of trenches exposing the underlying layer. In the masking phase, a second segment of the amorphous mask is formed on the underlying layer. The second segment comprises a second set of trenches exposing the underlying layer. The segments are non-overlapping. An open end of one of the first set of trenches faces an open end of one of the second set of trenches, but the ends are separated by a portion of the amorphous mask. In a semiconductor growth phase, semiconductor material is grown, by selective area growth, in the first and second sets of trenches to form first and second sub-networks of nanowires on the underlying layer. The first and second sub-networks of nanowires are joined to form a single nanowire network.

Abstract: In a masking phase, a first segment of an amorphous mask is formed on an underlying layer of a substrate. The first segment comprises a first set of trenches exposing the underlying layer. In the masking phase, a second segment of the amorphous mask is formed on the underlying layer. The second segment comprises a second set of trenches exposing the underlying layer. The segments are non-overlapping. An open end of one of the first set of trenches faces an open end of one of the second set of trenches, but the ends are separated by a portion of the amorphous mask. In a semiconductor growth phase, semiconductor material is grown, by selective area growth, in the first and second sets of trenches to form first and second sub-networks of nanowires on the underlying layer. The first and second sub-networks of nanowires are joined to form a single nanowire network.