Patents by Inventor Philippe COCHE

Philippe COCHE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device including hard mask structure with repeating spin-on hard mask layers
    Patent number: 11901187
    Abstract: Provided is a semiconductor device. The semiconductor device includes a wafer; an etch stop layer on the wafer; a lower mold layer on the etch stop layer; an intermediate supporter layer on the lower mold layer; an upper mold layer on the intermediate supporter layer; an upper supporter layer on the upper mold layer; and a hard mask structure on the upper supporter layer, wherein the hard mask structure includes a first hard mask layer on the upper supporter layer and a second hard mask layer on the first hard mask layer, one of the first hard mask layer and the second hard mask layer includes a first organic layer including a SOH containing C, H, O, and N, and the other one of the first hard mask layer and the second hard mask layer includes a second organic layer including an SOH containing C, H, and O.
    Type: Grant
    Filed: November 9, 2021
    Date of Patent: February 13, 2024
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hwanyeol Park, Jongyoung Park, Yongdeok Lee, Sejin Kyung, Daewee Kong, Ilwoo Kim, Songyi Baek, Philippe Coche
  • SEMICONDUCTOR DEVICE INCLUDING HARD MASK STRUCTURE
    Publication number: 20220344166
    Abstract: Provided is a semiconductor device. The semiconductor device includes a wafer; an etch stop layer on the wafer; a lower mold layer on the etch stop layer; an intermediate supporter layer on the lower mold layer; an upper mold layer on the intermediate supporter layer; an upper supporter layer on the upper mold layer; and a hard mask structure on the upper supporter layer, wherein the hard mask structure includes a first hard mask layer on the upper supporter layer and a second hard mask layer on the first hard mask layer, one of the first hard mask layer and the second hard mask layer includes a first organic layer including a SOH containing C, H, O, and N, and the other one of the first hard mask layer and the second hard mask layer includes a second organic layer including an SOH containing C, H, and O.
    Type: Application
    Filed: November 9, 2021
    Publication date: October 27, 2022
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Hwanyeol PARK, Jongyoung PARK, Yongdeok LEE, Sejin KYUNG, Daewee KONG, Ilwoo KIM, Songyi BAEK, Philippe COCHE