Abstract: The invention concerns a process for removing gaseous hydrides from a solid support of metallic oxides, which consists in causing a gas flow to circulate, at room temperature, on a solid support comprising at least copper and chromium and having a specific area lower than or equal to 100 m.sup.2 /g. This process may be used for the destruction of gaseous hydrides from the industry of semi-conductors, for example silanes, arsine, phosphine, diborane, germane, stannane, gallane, stibine, and hydrogen telluride, selenide and sulfide.

Abstract: Silicon hydrides are produced by acid hydrolysis of ternary silicon alloys. According to the process there are made to react an industrial ternary alloy of the formula M.sub.x M.sup.2.sub.y Si.sub.z, in which M.sup.1 is a reducing metal, M.sup.2 is an alkali alkaline-earth metal, with a dilute acid selected from hydracids and orthophosphoric acid, at a concentration of 2N to 6N, by adding the ternary alloy in the form of fine powder to the acid, the reaction being preformed between ambient temperature and 90.degree. C. The various hydrides are condensed, and separated by fractional evaporation under partial vacuum. The silicon hydrides--silane, disilane and higher polysilanes--after purification can be used as silicon vectors, depending on their chemical nature, particularly in the industries of electronic components, photovolaitic cells, photocopier drums and for frosting light bulbs by the dry method.