Abstract: An electrically conductive solid composite material contains: a solid matrix of electrically insulating material, and—a load of an electrically conductive material, wherein the charge includes so-called filiform nanoparticles, having: a length, extending along a main elongation direction; two so-called orthogonal dimensions, extending along two directions which are transverse and orthogonal to each other and orthogonal to the main elongation direction, the orthogonal dimensions being less than the length and less than 500 nm; and two so-called form factor ratios between the length and each of the two orthogonal dimensions, the form factor ratios being greater than 50, the filiform nanoparticles being distributed within the volume of the solid matrix with an amount, by volume, of less than 10%, particularly less than 5%.

Abstract: A molecular memory including a substrate made of silicon; a set of condensers, each condenser including two conductive layers constituting armatures of the condensers and between which is placed a dielectric layer; and a connector to provide electric contacts with external circuits, wherein the dielectric layer comprises at least partially a polymer containing triazole derivatives, a spin transition phenomenon support material or a spin transition molecular complex; and a method for manufacturing a molecular memory including covering a substrate with a conductive layer; coating a dielectric material on the conductive layer; covering the dielectric material with the conductive layer; impregnating by immersion a buffer in an inking solution of hexadecanethiol; drying and washing the impregnated buffer; creating a protective monolayer on the conductive layer by application of the impregnated, dried and washed buffer; and creating a chemical etching on the sample.

Abstract: A molecular memory including a substrate made of silicon; a set of condensers, each condenser including two conductive layers constituting armatures of the condensers and between which is placed a dielectric layer; and a connector to provide electric contacts with external circuits, wherein the dielectric layer comprises at least partially a polymer containing triazole derivatives, a spin transition phenomenon support material or a spin transition molecular complex; and a method for manufacturing a molecular memory including covering a substrate with a conductive layer; coating a dielectric material on the conductive layer; covering the dielectric material with the conductive layer; impregnating by immersion a buffer in an inking solution of hexadecanethiol; drying and washing the impregnated buffer; creating a protective monolayer on the conductive layer by application of the impregnated, dried and washed buffer; and creating a chemical etching on the sample.