Abstract: A radiofrequency, RF, generator, in particular for a plasma application, including at least one cooling element having an upper surface and a lower surface; at least one DC power supply; at least one power stage to amplify an RF signal and connected to the upper surface of the at least one cooling element, wherein the power stage include one or more power amplifiers; a driver to supply the power amplifier of the at least one power stage and connected to the upper surface of the at least one cooling element; wherein the at least one DC power supply is connected by a busbar with the power amplifier and the driver, wherein a DC voltage Vbusbar is supplied to the power amplifier and the driver via the busbar; and wherein the busbar comprises a damping network including a plurality of capacitors connected between ground and the busbar and configured to shape transients on Vbusbar.

Abstract: Resistor assembly, in particular for a power combiner, including a resistor chip and a clamping element to clamp the resistor chip to a cooling element, wherein the clamping element has a clamping arm to apply a pressure to the resistor chip.

Abstract: A radiofrequency, RF, power amplifier, including at least one field-effect transistor, FET, wherein a source terminal of the at least one FET is connected to ground. At least one diode is included, wherein a cathode of the at least one diode is connected to a drain terminal of the at least one FET and an anode of the at least one diode is connected to ground. An output network is connected to the drain terminal of the at least one FET. An input network is connected to a gate terminal of the at least one FET.

Abstract: A radiofrequency, RF, power amplifier, including at least one field-effect transistor, FET, wherein a source terminal of the at least one FET is connected to ground. At least one diode is included, wherein a cathode of the at least one diode is connected to a drain terminal of the at least one FET and an anode of the at least one diode is connected to ground. An output network is connected to the drain terminal of the at least one FET. An input network is connected to a gate terminal of the at least one FET.

Abstract: An amplifier (1) is provided, in particular, wideband amplifier with an input (4) and an output (5) comprising a first amplifier stage (2) and a second amplifier stage (3), wherein the first amplifier stage (2) has an active power splitter with at least one injection point, wherein this injection point corresponds to the input (4) of the amplifier, and at least two discharge points (9a, 9b), wherein this active power splitter is formed according to a traveling wave amplifier principle and the second amplifier stage (3) has at least two injection points (11a, 11b) and at least one discharge point, wherein this discharge point corresponds to the output (5) of the amplifier and is formed as a power coupler. It is essential that the second amplifier stage (3) is formed as a power coupler, wherein this power coupler is formed according to the principle of a reactively matched amplifier.

Abstract: An amplifier (1) is provided, in particular, wideband amplifier with an input (4) and an output (5) comprising a first amplifier stage (2) and a second amplifier stage (3), wherein the first amplifier stage (2) has an active power splitter with at least one injection point, wherein this injection point corresponds to the input (4) of the amplifier, and at least two discharge points (9a, 9b), wherein this active power splitter is formed according to a traveling wave amplifier principle and the second amplifier stage (3) has at least two injection points (11a, 11b) and at least one discharge point, wherein this discharge point corresponds to the output (5) of the amplifier and is formed as a power coupler. It is essential that the second amplifier stage (3) is formed as a power coupler, wherein this power coupler is formed according to the principle of a reactively matched amplifier.