Abstract: The invention relates to a broadband microwave device with switchable gain comprising a microwave signal input E and output S, a distributed amplifier with a plurality of amplifying cells comprising an input transmission line for an input signal applied to the microwave signal input E, said input transmission line having one of its two ends linked to the microwave signal input E, an output transmission line for said amplified input signal having an output end of the distributed amplifier, the cells of the distributed amplifier settable either to an amplifying state or to a blocked state. A switch switches the microwave signal output S either to a non-amplification position linked to the other end of the input transmission line, or to an amplification position linked to the output end of the distributed amplifier. A control unit supplies switch position control and amplifying cell status control signals.

Abstract: The present invention relates to the field of electronic devices known as baluns. It concerns an active balun which is broadband and reciprocal. Embodiments of the invention integrate an active splitter balun with an active combiner balun so as to form three transmission lines. A first active coupling is provided between the first and second transmission lines and a second active coupling is provided between the first and third transmission lines. The active couplings are provided by means of amplifier cells distributed along the transmission lines. Embodiments of the invention have configurable means for polarizing the different amplifier cells so as to create a specific coupling direction between the various transmission lines. The device according to the invention can be applied in the field of broadband mixers which are used, notably, in radio transmission and reception circuits.

Abstract: The invention relates to a broadband microwave device with switchable gain comprising a microwave signal input E and output S, a distributed amplifier with a plurality of amplifying cells comprising an input transmission line for an input signal applied to the microwave signal input E, said input transmission line having one of its two ends linked to the microwave signal input E, an output transmission line for said amplified input signal having an output end of the distributed amplifier, the cells of the distributed amplifier settable either to an amplifying state or to a blocked state. A switch switches the microwave signal output S either to a non-amplification position linked to the other end of the input transmission line, or to an amplification position linked to the output end of the distributed amplifier. A control unit supplies switch position control and amplifying cell status control signals.

Abstract: A controlled RF active duplexer comprises two distributed amplifiers and means for controlling them. Each distributed amplifier comprises an input line and an output line, the output line of the first distributed amplifier being common to the input line of the second distributed amplifier. An end of the input line of the first distributed amplifier forms the input port, an end of the output line of the second distributed amplifier forms the output port and an end of the line common to the two distributed amplifiers forms the input/output port. The distributed amplifiers are placed in the on state or in the off state in opposition to one another as a function of the ports to be made to communicate. The invention makes it possible to carry out the splitting of the RF signals within a compact space and isolation between input port and output port.

Abstract: The present invention relates to a device for switching an RF signal. It also relates to a transmit and receive module comprising such a switch. The device includes at least one branch linking a first pole to a second pole, a branch comprising a conducting line coupled to a reference potential, it comprises at least one Gallium Nitride (GaN) semi-conductor elementary switch, for example a transistor, linking the line to the reference potential, the RF signal propagating along the line when the semi-conductor is driven to the on state. In the transmit and receive module, the device links the transmit pathway and the receive pathway to an antenna. The invention applies notably in transmit and receive modules of airborne systems operating in a broad band of frequencies or in a narrow band.

Abstract: The present invention relates to the field of electronic devices known as baluns. It concerns an active balun which is broadband and reciprocal. Embodiments of the invention integrate an active splitter balun with an active combiner balun so as to form three transmission lines. A first active coupling is provided between the first and second transmission lines and a second active coupling is provided between the first and third transmission lines. The active couplings are provided by means of amplifier cells distributed along the transmission lines. Embodiments of the invention have configurable means for polarizing the different amplifier cells so as to create a specific coupling direction between the various transmission lines. The device according to the invention can be applied in the field of broadband mixers which are used, notably, in radio transmission and reception circuits.

Abstract: The present invention relates to a hyperfrequency detection module. It also relates to a wideband hyperfrequency detection device comprising one or more detection modules. The detection module comprises includes: a distributed amplifier (50) having N field-effect transistors (55), and a common drain line (56), a common gate line (54). The distributed amplifier has an input (52) on its common gate line (54) and an output (53) on the common drain line (56). A semiconductor-based detection circuit (51) and the detection circuit (51) are connected to one end (59) of the gate line (54) of the distributed amplifier (50). The invention applies in particular to the production of hyperfrequency monolithic circuit detectors.

Abstract: An active selector switch with two inputs and two outputs comprises two parts, each part comprising a distributed amplifier whose elementary cells comprise at least two cascode-mounted transistors (Q1 Q2, Q′1 Q′2), one transistor (Q3, Q′3) controlled through the gate line (Lgc1) of the amplifier being associated with each cell, the associated transistor (Q3) of the first part controlling the state of the common-gate transistor (Q′1) of the second part and the associated transistor (Q′3) of the second part controlling the state of the common-gate transistor (Q1) of the first part, the two inputs (E1, E2) of the selector switch being the free ends of the gate lines (Ldc1) of the two distributed amplifiers (41, 42) and the outputs (S1, S2) of the selector switch being the free ends of these two amplifiers. The invention can be applied especially to digitally controlled phase control devices.

Abstract: An active selector switch with two inputs and two outputs comprises two parts, each part comprising a distributed amplifier whose elementary cells comprise at least two cascode-mounted transistors (Q1 Q2, Q′1 Q′2), one transistor (Q3, Q′3) controlled through the gate line (Lgc1) of the amplifier being associated with each cell, the associated transistor (Q3) of the first part controlling the state of the common-gate transistor (Q′1) of the second part and the associated transistor (Q′3) of the second part controlling the state of the common-gate transistor (Q1) of the first part, the two inputs (E1, E2) of the selector switch being the free ends of the gate lines (Ldc1) of the two distributed amplifiers (41, 42) and the outputs (S1, S2) of the selector switch being the free ends of these two amplifiers. The invention can be applied especially to digitally controlled phase control devices.

Abstract: A broad-band phase-shifter comprises at least one selector switch and one elementary phase-shifter with two parallel channels, each comprising n “all-pass” cells. The selector switch routes the input signal (E) to either of the channels, each cell phase-shifting a signal according to a law as a function of its frequency, the phase shift &Dgr;&phgr; produced by an elementary phase-shifter being obtained by switching the signal from one channel to the other. The device can be applied especially in electronically scanned antennas.

Abstract: The interface device consists of a voltage offset diode (DD) constructed using monolithic microwave integrated technology, mounted between the output (S) of the upstream circuit (16) and the input of the downstream circuit (18). The characteristic of the offset diode (DD) is selected such that the bias voltage (VD) of the upstream circuit (16) is offset by an offset corresponding more or less to the disparity between the bias voltages (VD and VL) of the upstream (16) and downstream (8) circuits. The bias current of the downstream circuit is relatively high in comparison with the threshold current of the offset diode.

Abstract: An interface device is disposed between an optoelectronic sensor and a load the impedance of which is lower than that of the sensor. The interface device comprises an impedance adaptation stage, comprising a distributed amplifier with a broad band of frequencies, the input of which is directly connected to a terminal of the sensor, and constitutes an impedance with an ohmic value which is greater than that of the load, and the output of which is connected to the load. The device additionally comprises a bootstrap which comprises a field-effect transistor mounted in a common drain, the gate of which is connected to a terminal of the sensor, and the source of which is connected to the other terminal of the sensor, via a capacitor with a selected value.

Abstract: The invention relates to a distributed amplifier for wide band hyperfrequency signals of the type comprising:a plurality of basic amplifying cells (C.sub.1 to C.sub.n) mounted in series, with at least one common drain line (Ld) and at least one common grid line (Lg), each cell comprising at least one field effect transistor (T.sub.1) which is common-source mounted and filtering elements,first biasing means for applying a first biasing voltage (Vd) to the common drain line, andsecond biasing means for applying a second biasing voltage to the common grid line. According to the main feature of the invention, the first biasing means comprise a plurality of auxiliary field effect transistors (T'.sub.1 to T'.sub.n) functioning in saturable load mode and whose respective sources (S'.sub.1 to S'.sub.n) are distributively connected up to the common drain line (Ld) and whose respective drains (D'.sub.1 to D'.sub.n) receive in series the first biasing voltage (Vd).

Abstract: According to the invention, the circuit comprises at least one two-port network of the "M-derived" section type and connected as an all-pass filter with a phase law which is a linear function of frequency. The two-port network is made in monolithic technology on gallium arsenide and the plane of its structure includes at least one elementary section, which, between an inlet and an outlet which are situated at a distance apart, is constituted by a spiral connected in parallel with a capacitor of metal-insulator-metal structure, with the mid point of the spiral being connected via another capacitor of metal-insulator metal structure to a ground plane. It is applicable to making transmission lines which are programamble in length.