Abstract: A packaged unidirectional power transistor comprises a package with a number of pins which provide a voltage and/or current connection between the outside and the inside. Inside the package, a bidirectional vertical power transistor is present with a controllable bidirectional current path, through a body of the bidirectional vertical power transistor, between a first current terminal of the bidirectional vertical power transistor connected to the first current pin and a second current terminal of the bidirectional vertical power transistor connected to the second current pin. A control circuit connects the control pin to the body terminal and the control terminal to drive the body and the control terminal, which allows current through the body in a forward direction, from the first current terminal to the second terminal, as a function of the control voltage, and to block current in a reverse direction regardless of the voltage.

Abstract: A body-control-device for a bi-directional transistor, said bi-directional transistor having a first-transistor-channel-terminal, a second-transistor-channel-terminal, a transistor-control-terminal and a transistor-body-terminal. The body-control-device comprises a body-control-terminal connectable to the transistor-body-terminal of the bi-directional transistor, a first-body-channel-terminal connectable to the first-transistor-channel-terminal of the bi-directional transistor, a second-body-channel-terminal connectable to the second-transistor-channel-terminal of the bi-directional transistor, a negative-voltage-source and a switching-circuit configured to selectively provide an offset-first-circuit-path between the first-body-channel-terminal and the body-control-terminal, wherein the offset-first-circuit-path includes the negative-voltage-source such that it provides a negative voltage bias between the body-control-terminal and the first-body-channel-terminal.

Abstract: A power switch module comprising a control component. Upon an indicated operating condition fulfilling a protection condition, the control component is arranged to transition the power switch module from an ON state to a latched-OFF state in which the control component is arranged to configure the switching device to be turned off to decouple the load node from the power supply node. Having transition to the latched-Off state, the control component is further arranged to determine whether a voltage level at the load node exceeds a threshold voltage level, and if it is determined that the voltage level at the load node exceeds the threshold voltage level, transition the power switch module from the latched-OFF state to a current-limited state in which the control component is arranged to control the switching device to limit current-flow there through.

Abstract: A body-control-device for a bi-directional transistor, said bi-directional transistor having a first-transistor-channel-terminal, a second-transistor-channel-terminal, a transistor-control-terminal and a transistor-body-terminal. The body-control-device comprises a body-control-terminal connectable to the transistor-body-terminal of the bi-directional transistor, a first-body-channel-terminal connectable to the first-transistor-channel-terminal of the bi-directional transistor, a second-body-channel-terminal connectable to the second-transistor-channel-terminal of the bi-directional transistor, a negative-voltage-source and a switching-circuit configured to selectively provide an offset-first-circuit-path between the first-body-channel-terminal and the body-control-terminal, wherein the offset-first-circuit-path includes the negative-voltage-source such that it provides a negative voltage bias between the body-control-terminal and the first-body-channel-terminal.

Abstract: A semiconductor product comprising: a first semiconductor electrode, a second semiconductor electrode and an interconnecting semiconductor electrode defining a third semiconductor electrode; a first switch, between the first semiconductor electrode and the third semiconductor electrode, provided by a first vertical insulated-gate field-effect-transistor; and a second switch, between the second semiconductor electrode and the third semiconductor electrode, provided by a second vertical insulated-gate field-effect-transistor, wherein the interconnecting semiconductor electrode interconnects the first vertical insulated gate field-effect-transistor and the second vertical insulated gate field-effect-transistor.

Abstract: An over-current protection circuit including, a current supply switch with a first terminal coupled to a supply current input and with a second terminal coupled to a supply current output. The current supply switch is switchable at least between an on-state, in which the current supply switch provides a conductive connection between the first terminal and the second terminal, and an off-state, in which the current supply switch interrupts the conductive connection between the first terminal and the second terminal. The over-current protection circuit receives a supply current via the supply current input and provides the supply current via the supply current output if the switch is in the on-state. The current supply switch includes a High Electron Mobility Transistor.

Abstract: A power switch module comprising a control component. Upon an indicated operating condition fulfilling a protection condition, the control component is arranged to transition the power switch module from an ON state to a latched-OFF state in which the control component is arranged to configure the switching device to be turned off to decouple the load node from the power supply node. Having transition to the latched-Off state, the control component is further arranged to determine whether a voltage level at the load node exceeds a threshold voltage level, and if it is determined that the voltage level at the load node exceeds the threshold voltage level, transition the power switch module from the latched-OFF state to a current-limited state in which the control component is arranged to control the switching device to limit current-flow there through.

Abstract: A packaged unidirectional power transistor comprises a package with a number of pins which provide a voltage and/or current connection between the outside and the inside. Inside the package, a bidirectional vertical power transistor is present with a controllable bidirectional current path, through a body of the bidirectional vertical power transistor, between a first current terminal of the bidirectional vertical power transistor connected to the first current pin and a second current terminal of the bidirectional vertical power transistor connected to the second current pin. A control circuit connects the control pin to the body terminal and the control terminal to drive the body and the control terminal, which allows current through the body in a forward direction, from the first current terminal to the second terminal, as a function of the control voltage, and to block current in a reverse direction regardless of the voltage.

Abstract: A semiconductor device comprises a first contact layer, a first drift layer adjacent the first contact layer, a buried body layer adjacent the first drift layer and a second contact layer. A first vertical trench and a second vertical trench are provided, the first and second vertical trenches being spaced with respect to each other and extending from the second contact layer to substantially beyond the buried body layer. A second drift layer is also provided and sandwiched between the buried body layer and the second contact layer.

Abstract: A semiconductor device comprises a first contact layer, a first drift layer adjacent the first contact layer, a buried body layer adjacent the first drift layer and a second contact layer. A first vertical trench and a second vertical trench are provided, the first and second vertical trenches being spaced with respect to each other and extending from the second contact layer to substantially beyond the buried body layer. A second drift layer is also provided and sandwiched between the buried body layer and the second contact layer.

Abstract: A semiconductor product comprising: a first semiconductor electrode, a second semiconductor electrode and an interconnecting semiconductor electrode defining a third semiconductor electrode; a first switch, between the first semiconductor electrode and the third semiconductor electrode, provided by a first vertical insulated-gate field-effect-transistor; and a second switch, between the second semiconductor electrode and the third semiconductor electrode, provided by a second vertical insulated-gate field-effect-transistor, wherein the interconnecting semiconductor electrode interconnects the first vertical insulated gate field-effect-transistor and the second vertical insulated gate field-effect-transistor.

Abstract: A method of fabricating an integrated circuit (IC) device includes mounting, via a first surface thereof, at least one semiconductor die on to a surface of an IC device package, mounting, via an interconnect surface thereof, at least one fuse component on to a second surface of the at least one semiconductor die, the second surface of the at least one semiconductor die having at least one terminal of the at least one active component. The at least one fuse component is mounted such that the interconnect surface of the at least one fuse component is thermally coupled to the second surface of the at least one semiconductor die and electrically coupled to the at least one terminal of the at least one active component.

Abstract: A circuit arrangement comprises a plurality of current channels located in different die areas of a shared circuit die, at least one of the plurality of current channels comprising a power device; at least one sense circuit connected to one or more of the different die areas and arranged to provide a sense current from sensing a current through a primary of the plurality of current channels comprising one of the different die areas. The at least one sense circuit comprises a compensation module arranged to provide a compensation current adapted to at least partly compensate a deviation of the sense current caused by crosstalk between the primary and one or more secondary of the plurality of current channels depending on one or more secondary currents flowing through the one or more secondary current channels; wherein the compensation module is arranged to provide the compensation current at least partly as a weighted sum of the one or more secondary currents.

Abstract: An over-current protection circuit including, a current supply switch with a first terminal coupled to a supply current input and with a second terminal coupled to a supply current output. The current supply switch is switchable at least between an on-state, in which the current supply switch provides a conductive connection between the first terminal and the second terminal, and an off-state, in which the current supply switch interrupts the conductive connection between the first terminal and the second terminal. The over-current protection circuit receives a supply current via the supply current input and provides the supply current via the supply current output if the switch is in the on-state. The current supply switch includes High Electron Mobility Transistor.

Abstract: A circuit arrangement comprises a plurality of current channels located in different die areas of a shared circuit die at least one of the plurality of current channels comprising a power device; at least one sense circuit connected to one or more of the different die areas and arranged to provide a sense current from sensing a current through a primary of the plurality of current channels comprising one of the different die areas. The at least one sense circuit comprises a compensation module arranged to provide a compensation current adapted to at least partly compensate a deviation of the sense current caused by crosstalk between the primary and one or more secondary of the plurality of current channels depending on one or more secondary currents flowing through the one or more secondary current channels; wherein the compensation module is arranged to provide the compensation current at least partly as a weighted sum of the one or more secondary currents.

Abstract: An over-current protection circuit, including a current input for receiving a input current and a current output electrically connectable to a load, for outputting an output current proportional to the input current. A switch connects the current input to the current output. The switch has at least two switch states including an open state in which a current flow from the current input to the current output is interrupted and a closed state in which the current flow is enabled. The switch includes a switch control input for controlling the switch state. The circuit has a sensor for sensing a load current applied to the load and a controller connected to the sensor for controlling the switch to be in the open state when the sensed load current has exceeded a current threshold during a predetermined period of time, the predetermined period of time being dependent on an amount with which said sensed load current exceeds the threshold.

Abstract: An over-current protection circuit, including a current input for receiving a input current and a current output electrically connectable to a load, for outputting an output current proportional to the input current. A switch connects the current input to the current output. The switch has at least two switch states including an open state in which a current flow from the current input to the current output is interrupted and a closed state in which the current flow is enabled. The switch includes a switch control input for controlling the switch state. The circuit has a sensor for sensing a load current applied to the load and a controller connected to the sensor for controlling the switch to be in the open state when the sensed load current has exceeded a current threshold during a predetermined period of time, the predetermined period of time being dependent on an amount with which said sensed load current exceeds the threshold.

Abstract: The invention relates to an electric traction chain (1) for an automobile, including:—an onboard rechargeable power source (2); —a static converter (5) capable of generating a three-phase voltage system connected by input to said rechargeable power source (2); a three-phase electric motor (10) supplied with power by the three-phase voltage system generated by the static converter (5); and wherein an external electric power source (35) is connectable to the stator windings of the motor to enable recharging of the onboard power source across the static converter (5). The electric traction chain is characterized in that the motor (10) is synchronous with separate excitation, for which the power supply to the rotor (23) is cut off during the recharging phases.

Abstract: An integrated circuit comprises a power device located on a die. The power device is operably coupled to a processing function, wherein the signal processing function is operably coupled to two or more temperature sensors. A first temperature sensor is operably coupled to the power device to measure a temperature of the power device and the second temperature sensor is located, such that it measures a substantially ambient temperature related to the die. The signal processing function determines the temperature gradient therebetween.

Abstract: An integrated circuit comprises a power device located on a die. The power device is operably coupled to a processing function, wherein the signal processing function is operably coupled to two or more temperature sensors. A first temperature sensor is operably coupled to the power device to measure a temperature of the power device and the second temperature sensor is located, such that it measures a substantially ambient temperature related to the die. The signal processing function determines the temperature gradient therebetween. In this manner, improved reliability of the integrated circuit and power device is obtained, as the power device utilises the fact that its thermo-mechanical stress reliability strongly depends upon the temperature gradient across the die rather than the number of times it reaches an excessive temperature.