Abstract: The method relates to the preparation of a TEM lamella from a structured sample, in particular of a microelectronic device, which has a location to be examined, situated at an unknown position. Firstly, the structural element within which the region to be examined is situated is prelocalized. Afterwards, the TEM lamella is sectioned by means of an ion beam of an FIB apparatus with a thickness such that the entire structural element is contained in the TEM lamella. This method considerably increases the probability that the location to be examined will actually be situated in the TEM lamella, without the sample or lamella having to be transported too often.