Abstract: A method for manufacturing an optoelectronic device includes providing a support supporting a plurality of three-dimensional semiconductor structures, forming a sacrificial portion under a first set of 3D structures of the plurality of three-dimensional semiconductor structures, forming a barrier portion around the sacrificial portion, said barrier portion having a basal wall extending under the sacrificial portion, and a lateral wall extending at the edge of the sacrificial portion, forming an access trench up to the sacrificial portion, the access trench extending continuously along the lateral wall of the barrier portion, etching the sacrificial portion from the access trench, and removing the first set of 3D structures.

Abstract: A method of manufacturing an optoelectronic device including assemblies of light-emitting diodes (LED) having first and second assemblies and first blocks made of a first photoluminescent material, each covering one of the first assemblies. The method includes the forming of a layer covering the first and second assemblies, the delimiting of first openings in the layer to expose the first assemblies, the filling of the first openings with the first material, and the performing of a chemical-mechanical polishing to delimit the first blocks.

Abstract: A method for producing optoelectronic devices, including the following successive steps: providing a substrate having a first face; on the first face, forming sets of light-emitting diodes including wire-like, conical or frustoconical semiconductor elements; covering all of the first face with a layer encapsulating the light-emitting diodes; forming a conductive element that is insulated from the substrate and extends through the substrate from the second face to at least the first face; reducing the thickness of the substrate; and cutting the resulting structure in order to separate each set of light-emitting diodes.

Abstract: An optoelectronic device including: a support; blocks of a semiconductor material, resting on the support and each including a first surface on the side opposite to the support and lateral walls; a nucleation layer on each first surface; a first insulating layer covering each nucleation layer and including an opening exposing a portion of the nucleation layer; a semiconductor element resting on each first insulating layer and in contact with the nucleation layer covered with the first insulating layer in the opening; a shell covering each semiconductor element and including an active layer capable of emitting or absorbing an electromagnetic radiation; and a first conductive layer, reflecting the radiation, extending between the semiconductor elements and extending over at least a portion of the lateral walls of the blocks.

Abstract: An optoelectronic device including a substrate including first and second opposite surfaces and lateral electrical insulation elements extending in the substrate and delimiting first electrically-insulated semiconductor or conductive portions. The optoelectronic device includes, for each first portion, an assembly of light-emitting diodes electrically coupled to the first portion. The optoelectronic device includes an electrode layer covering all the light-emitting diodes, a protection layer covering the electrode layer, and walls extending in the protection layer and delimiting second portions surrounding or opposite the assemblies of light-emitting diodes. The walls contain at least one material from the group including air, a metal, a semiconductor material, a metal alloy, a partially transparent material, and a core made of an at least partially transparent material covered with an opaque or reflective layer.

Abstract: An optoelectronic device including: a support; blocks of a semiconductor material, resting on the support and each including a first surface on the side opposite to the support and lateral walls; a nucleation layer on each first surface; a first insulating layer covering each nucleation layer and including an opening exposing a portion of the nucleation layer; a semiconductor element resting on each first insulating layer and in contact with the nucleation layer covered with the first insulating layer in the opening; a shell covering each semiconductor element and including an active layer capable of emitting or absorbing an electromagnetic radiation; and a first conductive layer, reflecting the radiation, extending between the semiconductor elements and extending over at least a portion of the lateral walls of the blocks.

Abstract: A light-emitting device comprises a set of nanowires over the whole surface of a substrate, comprising at least a first series of first nanowires and a second series of second nanowires; the first series comprising first nanowires emitting light under electrical control, connected between a first and a second type of electrical contact to emit light under electrical control, the first nanowires covered by at least one conducting layer transparent at the wavelength of the light-emitting device, layer in contact with the first type of electrical contact; the second series comprising second nanowires, encapsulated in a layer of metal allowing the first electrical contact to be formed; the second electrical contact being on the back face of the substrate, opposite to the face comprising the nanowires, and provided by a conducting layer facing the first series of nanowires. A method of fabrication of the light-emitting device is provided.

Abstract: An optoelectronic device including a substrate including first and second opposite surfaces and lateral electrical insulation elements extending in the substrate and delimiting first electrically-insulated semiconductor or conductive portions. The optoelectronic device includes, for each first portion, an assembly of light-emitting diodes electrically coupled to the first portion. The optoelectronic device includes an electrode layer covering all the light-emitting diodes, a protection layer covering the electrode layer, and walls extending in the protection layer and delimiting second portions surrounding or opposite the assemblies of light-emitting diodes. The walls contain at least one material from the group including air, a metal, a semiconductor material, a metal alloy, a partially transparent material, and a core made of an at least partially transparent material covered with an opaque or reflective layer.

Abstract: A method for producing optoelectronic devices, including the following successive steps: providing a substrate having a first face; on the first face, forming sets of light-emitting diodes including wire-like, conical or frustoconical semiconductor elements; covering all of the first face with a layer encapsulating the light-emitting diodes; forming a conductive element that is insulated from the substrate and extends through the substrate from the second face to at least the first face; reducing the thickness of the substrate; and cutting the resulting structure in order to separate each set of light-emitting diodes.

Abstract: A method for producing optoelectronic devices, including the following successive steps: providing a substrate having a first face; on the first face, forming sets of light-emitting diodes including wire-like, conical or frustoconical semiconductor elements; covering all of the first face with a layer encapsulating the light-emitting diodes; forming a conductive element that is insulated from the substrate and extends through the substrate from the second face to at least the first face; reducing the thickness of the substrate; and cutting the resulting structure in order to separate each set of light-emitting diodes.

Abstract: An optoelectronic device including a substrate having a surface, openings which extend in the substrate from the surface, and semiconductor elements, each semiconductor element partially extending into one of the openings and partially outside said opening, the height of each opening being at least 25 nm and at most 5 ?m and the ratio of the height to the smallest diameter of each opening being at least 0.5 and at most 15.

Abstract: A process for fabricating an electronic device including a substrate and microwires or nanowires resting on the substrate, the process including successive steps of covering the wires with an insulating layer, covering the insulating layer with an opaque layer, depositing a first photoresist layer over the substrate between the wires, etching the first photoresist layer over a first thickness by photolithography, etching the first photoresist layer remaining after the preceding step over a second thickness by plasma etching, etching the portion of the opaque layer not covered by the first photoresist layer remaining after the preceding step, etching the portion of the insulating layer not covered by the opaque layer, removing the first photoresist layer remaining after the preceding step, and removing the opaque layer.

Abstract: A process for fabricating an electronic device including a substrate and microwires or nanowires resting on the substrate, the process including successive steps of covering the wires with an insulating layer, covering the insulating layer with an opaque layer, depositing a first photoresist layer over the substrate between the wires, etching the first photoresist layer over a first thickness by photolithography, etching the first photoresist layer remaining after the preceding step over a second thickness by plasma etching, etching the portion of the opaque layer not covered by the first photoresist layer remaining after the preceding step, etching the portion of the insulating layer not covered by the opaque layer, removing the first photoresist layer remaining after the preceding step, and removing the opaque layer.

Abstract: An optoelectronic device including a substrate having a surface, openings which extend in the substrate from the surface, and semiconductor elements, each semiconductor element partially extending into one of the openings and partially outside said opening, the height of each opening being at least 25 nm and at most 5 ?m and the ratio of the height to the smallest diameter of each opening being at least 0.5 and at most 15.

Abstract: A method for producing optoelectronic devices, including the following successive steps: providing a substrate having a first face; on the first face, forming sets of light-emitting diodes including wire-like, conical or frustoconical semiconductor elements; covering all of the first face with a layer encapsulating the light-emitting diodes; forming a conductive element that is insulated from the substrate and extends through the substrate from the second face to at least the first face; reducing the thickness of the substrate; and cutting the resulting structure in order to separate each set of light-emitting diodes.

Abstract: A light-emitting device comprises a set of nanowires over the whole surface of a substrate, comprising at least a first series of first nanowires and a second series of second nanowires; the first series comprising first nanowires emitting light under electrical control, connected between a first and a second type of electrical contact to emit light under electrical control, the first nanowires covered by at least one conducting layer transparent at the wavelength of the light-emitting device, layer in contact with the first type of electrical contact; the second series comprising second nanowires, encapsulated in a layer of metal allowing the first electrical contact to be formed; the second electrical contact being on the back face of the substrate, opposite to the face comprising the nanowires, and provided by a conducting layer facing the first series of nanowires. A method of fabrication of the light-emitting device is provided.

Abstract: Fully optical device for breaking down the dynamic range of an optical signal and system for measuring the signal, using this device. This device comprises fully optical means to break down this dynamic range.

Abstract: The invention relates to the manufacture of a matrix sensor using a sensitive layer of a ferroelectric P(VDF/TrFE) copolymer, deposited on an integrated circuit. In order to simplify the manufacture and improve the yields, deposited first on the integrated circuit is a first layer of titanium and it is etched in order to form a matrix array of electrodes electrically connected to the integrated circuit; next, a P(VDF/TrFE) copolymer comprising a small proportion of around 1 to 10% of a second polymer that favors the adhesion of the P(VDF/TrFE) copolymer is deposited on the integrated circuit; the polymer is either underneath the P(VDF/TrFE) or blended therewith. The copolymer and its adhesion promoter are etched in a single step, and finally a second conductive layer is deposited and it is etched in order to form a counter electrode for the whole of the matrix array. For use in ultrasonic image sensors.

Abstract: The present invention relates to a method and device for packaging dry ice in a plastic film, the said device comprising: —means for dispensing and shaping a plastic film comprising a shaping sleeve over the exterior wall of which the plastic film is paid out, —a dry ice generator connected to a source of liquid carbon dioxide, the dry ice generator being positioned inside the shaping sleeve so as to leave a gap between the generator and the shaping sleeve and allow the plastic film shaped to become filled with dry ice, —and means for sealing the shaped plastic film, characterized in that the shaping sleeve is equipped with thermal insulating means and/or with heating means.

Abstract: Fully optical device for breaking down the dynamic range of an optical signal and system for measuring the signal, using this device. This device comprises fully optical means to break down this dynamic range.