Patents by Inventor Philippe Jamet

Philippe Jamet has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating reduced subthreshold leakage current submicron NFET's with high III/V ratio material
    Publication number: 20070138507
    Abstract: A method of fabricating an enhancement mode semiconductor device comprises providing a compound semiconductor substrate, epitaxially growing on the substrate a first portion of a buffer, the first portion including gallium arsenide (GaAs), growing a second portion of the buffer, the second portion including a high V/III ratio and high aluminum (Al) mole fraction aluminum gallium arsenide (AlGaAs), and epitaxially growing a stack of compound semiconductor layers on the buffer. An enhancement mode semiconductor device is then formed in the stack.
    Type: Application
    Filed: December 16, 2005
    Publication date: June 21, 2007
    Inventors: Elizabeth Glass, Olin Hartin, Haldane Henry, Philippe Jamet, Lisa Zhang, Michael Pelczynski