Abstract: A plug connection including a plug connector and a plug socket for electrically conductively connecting a circuit board. The plug connector has an insulating housing with a conductor insertion opening for guiding an electrical conductor into the insulating housing. A contact insert is received in the insulating housing, which has a busbar and a clamping spring. The insulating housing having a contact pin receiving opening for guiding a contact pin into the insulating housing. The busbar having a second clamping point for the contact pin. An actuating element is configured to open and/or close the first clamping point. An actuation of the actuating element is blocked by at least one of the insulating walls in an assembled state of the plug connector and the plug socket.

Abstract: The present invention relates to methods for controlling the etching rate of CoSi2 layers by adjusting the pH of an HF-based solution to obtain the desired etch rate. The pH of the HF-based solution may be adjusted by adding pH modifying chemicals to the solution. A further aspect of the invention is an improved method for manufacturing Schotky barrier infared detectors employing the controlled etching step. A method for reducing drain induced barrier lowering in an active transistor having a small gate length is also provided.

Abstract: The present invention relates to methods for controlling the etching rate of CoSi.sub.2 layers by adjusting the pH of an HF-based solution to obtain the desired etch rate. The pH of the HF-based solution may be adjusted by adding pH modifying chemicals to the solution. A further aspect of the invention is an improved method for manufacturing Schottky barrier infared detectors employing the controlled etching step. A method for reducing drain induced barrier lowering in an active transistor having a small gate length is also provided.