Patents by Inventor Philippe Jansen

Philippe Jansen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6255227
    Abstract: The present invention relates to methods for controlling the etching rate of CoSi2 layers by adjusting the pH of an HF-based solution to obtain the desired etch rate. The pH of the HF-based solution may be adjusted by adding pH modifying chemicals to the solution. A further aspect of the invention is an improved method for manufacturing Schotky barrier infared detectors employing the controlled etching step. A method for reducing drain induced barrier lowering in an active transistor having a small gate length is also provided.
    Type: Grant
    Filed: January 6, 2000
    Date of Patent: July 3, 2001
    Assignee: Interuniversitair Microelektronica Centrum
    Inventors: Ricardo Alves Donaton, Karen Irma Josef Maex, Rita Verbeeck, Philippe Jansen, Rita Rooyackers, Ludo Deferm, Mikhail Rodionovich Baklanov
  • Patent number: 6153484
    Abstract: The present invention relates to methods for controlling the etching rate of CoSi.sub.2 layers by adjusting the pH of an HF-based solution to obtain the desired etch rate. The pH of the HF-based solution may be adjusted by adding pH modifying chemicals to the solution. A further aspect of the invention is an improved method for manufacturing Schottky barrier infared detectors employing the controlled etching step. A method for reducing drain induced barrier lowering in an active transistor having a small gate length is also provided.
    Type: Grant
    Filed: June 19, 1996
    Date of Patent: November 28, 2000
    Assignee: IMEC VZW
    Inventors: Ricardo Alves Donaton, Karen Irma Josef Maex, Rita Verbeeck, Philippe Jansen, Rita Rooyackers, Ludo Deferm, Mikhail Rodionovich Baklanov