Abstract: A method for adjusting parameter values for a virtual subset of a network called “network slice,” dedicated to a service, where the method includes driving a graphical interface in which polar coordinates are associated with each of the parameters for the network slice, with an angular coordinate assigned to one parameter and a radial coordinate assigned to the value of that parameter.

Abstract: A method for processing a substrate that includes: loading the substrate in a plasma processing chamber; performing a cyclic plasma etch process including a plurality of cycles, where each cycle of the plurality of cycles includes: generating a first plasma from a first gas mixture including a fluorosilane and oxygen; performing a deposition step by exposing the substrate to the first plasma to form a passivation film including silicon and fluorine; generating a second plasma from a second gas mixture including a noble gas; and performing an etch step by exposing the substrate to the second plasma.

Abstract: An etching method includes: a physical adsorption process of physically adsorbing an adsorbate based on a first processing gas on a film to be etched under a condition that the pressure of the first processing gas is smaller than the saturated vapor pressure of the first processing gas with respect to a temperature of an object to be processed while cooling the object to be processed on which the film to be etched is formed; and an etching process of etching the film to be etched by reacting the adsorbate with the film to be etched by a plasma of a second processing gas.

Abstract: A plasma etching method includes a physisorption step for causing an adsorbate that is based on first processing gas to be physisorbed onto a film to be etched, while cooling an object to be processed on which the film to be etched is provided; and an etching step for etching the film to be etched by causing the adsorbate to react with the film to be etched, using the plasma of second processing gas.

Abstract: A method for adjusting parameter values for a virtual subset of a network called “network slice,” dedicated to a service, where the method includes driving a graphical interface in which polar coordinates are associated with each of the parameters for the network slice, with an angular coordinate assigned to one parameter and a radial coordinate assigned to the value of that parameter.

Abstract: A plasma etching method includes a physisorption step for causing an adsorbate that is based on first processing gas to be physisorbed onto a film to be etched, while cooling an object to be processed on which the film to be etched is provided; and an etching step for etching the film to be etched by causing the adsorbate to react with the film to be etched, using the plasma of second processing gas.

Abstract: A method of anisotropic plasma etching of a silicon wafer, maintained at a temperature from ?40° C. to ?120° C., comprising alternated and repeated steps of: etching with injection of a fluorinated gas, into the plasma reactor, and passivation with injection of silicon tetrafluoride, SiF4, and of oxygen into the plasma reactor, the flow rate of the gases in the plasma reactor being on the order of from 10% to 25% of the gas flow rate during the etch step.

Abstract: A method of anisotropic plasma etching of a silicon wafer, maintained at a temperature from ?40° C. to ?120° C., comprising alternated and repeated steps of: etching with injection of a fluorinated gas, into the plasma reactor, and passivation with injection of silicon tetrafluoride, SiF4, and of oxygen into the plasma reactor, the flow rate of the gases in the plasma reactor being on the order of from 10% to 25% of the gas flow rate during the etch step.