Abstract: The object of the present invention is a method for preparing an article, the structure of which comprises a substrate in a glass or in a glass-ceramic and an original coating fixed to at least one portion of the surface of said substrate, in a characteristic way, said coating, most particularly proposed with reference to the technical problem of VOC emission when it is brought to high temperature, is generated from at least one loaded polysilsesquioxane resin; said at least one polysilsesquioxane resin not containing any aryl radical in its structure. The object of the present invention is also the article which may be obtained after carrying said method.

Abstract: Methods, compositions, and articles provide for LAS-type glass-ceramics having specific thermo-mechanical, optical and coloration characteristics to yield generally brown-grey products. The glass-ceramic materials may include as colorants iron oxide, vanadium oxide, chromium oxide, cobalt oxide, nickel oxide and/or cerium oxide.

Abstract: Methods for cutting a fragile material are provided. The methods comprise the step of heating the fragile material along a separation path to separate the fragile material into a first portion and a second portion. At least the first portion includes a first thermal affected zone extending along the separation path. The methods further include the steps of spontaneously splitting at least part of the first thermal affected zone from the remainder of the first portion along a first split path extending a first distance from the separation path. The spontaneous splitting occurs as a consequence of the step of heating the fragile material.

Abstract: Transparent ?-quartz glass-ceramics containing vanadium oxide. Such glass-ceramics have advantageous optical properties including good transmission in the infrared range, low transmission in the visible range, and significant transmission in the blue range for thicknesses of 3 mm. They can be used as materials for cooking top plates.

Abstract: Methods for cutting a fragile material are provided. The methods comprise the step of heating the fragile material along a separation path to separate the fragile material into a first portion and a second portion. At least the first portion includes a first thermal affected zone extending along the separation path. The methods further include the steps of spontaneously splitting at least part of the first thermal affected zone from the remainder of the first portion along a first split path extending a first distance from the separation path. The spontaneous splitting occurs as a consequence of the step of heating the fragile material.

Abstract: Transparent ?-quartz glass-ceramics containing vanadium oxide. Such glass-ceramics have advantageous optical properties including good transmission in the infrared range, low transmission in the visible range, and significant transmission in the blue range for thicknesses of 3 mm. They can be used as materials for cooking top plates.

Abstract: Systems and methods for and products of a semiconductor-on-insulator (SOI) structure including subjecting at least one unfinished surface to a laser annealing process. Production of the SOI structure further may include subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer in the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to an insulator substrate; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing at least one cleaved surface; and subjecting the at least one cleaved surface to the laser annealing process.

Abstract: The present invention relates to glass-ceramic materials, processes for making the same and articles comprising the same. The glass-ceramic material has a composition, by weight of the total composition, comprising 55-68% SiO2; 18-24% Al2O3; 3.3-4.1% Li2O; 1.5-4.0% ZnO; 1.5-5.0% MgO; 2-5% TiO2; 0-2% ZrO2; 0-5% B2O3; 0-8% P2O5; 0-2% Na2O, 0-2% K2O; and at least one component resulting from an effective amount of at least one fining agent; wherein: the total of B2O3 and P2O5 is at least 1.5% by weight, the total of MgO and ZnO is at least about 3.5% by weight, the total of Na2O and K2O is less than about 3.0% by weight, the total of P2O5, B2O3, Na2O and K2O is less than about 11% by weight, the weight ratio of the sum total of Na2O+K2O to the sum total of P2O5+B2O3 ( Na 2 ? O + K 2 ? O B 2 ? O 3 + P 2 ? O 5 ) is less than about 0.

Abstract: Systems and methods for and products of a semiconductor-on-insulator (SOI) structure including subjecting at least one unfinished surface to a laser annealing process. Production of the SOI structure further may include subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer in the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to an insulator substrate; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing at least one cleaved surface; and subjecting the at least one cleaved surface to the laser annealing process.

Abstract: The present invention relates to glass-ceramic materials, processes for making the same and articles comprising the same. The glass-ceramic material has a composition, by weight of the total composition, comprising 55-68% SiO2; 18-24% Al2O3; 3.3-4.1% Li2O; 1.5-4.0% ZnO; 1.5-5.0% MgO; 2-5% TiO2; 0-2% ZrO2; 0-5% B2O3; 0-8% P2O5; 0-2% Na2O, 0-2% K2O; and at least one component resulting from an effective amount of at least one fining agent; wherein: the total of B2O3 and P2O5 is at least 1.5% by weight, the total of MgO and ZnO is at least about 3.5% by weight, the total of Na2O and K2O is less than about 3.0% by weight, the total of P2O5, B2O3, Na2O and K2O is less than about 11% by weight, the weight ratio of the sum total of Na2O+K2O to the sum total of P2O5+B2O3 ( Na 2 ? O + K 2 ? O B 2 ? O 3 + P 2 ? O 5 ) is less than about 0.

Abstract: A method of fabricating a phased array narrow band wavelength division multiplexer including an arrayed waveguide, a slab waveguide and a transition region between the array waveguide and the slab waveguide comprising etching the transition region with a reactive ion etch to form vertically tapered waveguides between the arrayed waveguides.

Abstract: An optical component comprising one or more optical elements (35′) aligned with the end(s) of one or more waveguides (25′) is fabricated by a process in which, first of all, a doped silica core layer (20) is deposited on a substrate (10) (or on a buffer layer on the substrate), and subsequently a partial overclad layer (30A) typically 1-5 &mgr;m thick is deposited on the core layer. The partial overclad layer and core layer are patterned and etched so as simultaneously to define the optical element(s) and the waveguide core(s). Afterwards, the overclad is completed by depositing a further overclad layer (30B). In the case of application of this fabrication method to a grating-based NBWDM device, the metallisation of the grating can precede or follow the deposition of the second overclad portion (30B). In either case, low-temperature deposition processes are required for deposition of this second overclad portion.

Abstract: A method of fabricating an optical waveguide device that includes a waveguide and a trench, comprises providing a substrate material that includes a substrate layer, an underclad layer, a core layer, and an overclad layer. A waveguide and trench pattern is simultaneously defined in the substrate material and the substrate material is etched to form a waveguide circuit structure that includes the waveguide and trench pattern.

Abstract: A method of forming a layer of silicon on a surface comprises the steps of depositing silicon on the surface by a physical deposition process such as electron beam evaporation and, during said deposition process, subjecting the forming film to ionic bombardment. The resultant silicon film has stresses which are considerably reduced compared to a film produced by an ordinary physical deposition process. This method is particularly well adapted to the formation of relatively thick silicon layers (.gtoreq.1 .mu.m) on a layer (or stack of layers) of silica, to serve as an etching mask in a subsequent deep etching of the silica by reactive ion etching.