Patents by Inventor Philippe Maurel

Philippe Maurel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20020134438
    Abstract: Viewing device adaptable to a pipe in which a fluid containing solid particles circulates, allowing to examine a volume of this fluid isolated from the fluid stream without changing its thermodynamic state in relation to that of the circulating fluid.
    Type: Application
    Filed: June 13, 2001
    Publication date: September 26, 2002
    Inventors: Regis Vilagines, Philippe Maurel, Yvon Lagrange
  • Patent number: 5627100
    Abstract: A method for making a set of surface-emitting laser diodes comprises the making of reflectors by the epitaxial growth of at least one semiconductor material through a mask having apertures with inclined flanks. This method leads to the obtaining of the Bragg reflectors obtained in situ, removing the need for the ion etching of a semiconductor substrate followed by a phase for the conditioning of the surface of the sample before the preparation of the desired laser structure.Application: optical power source.
    Type: Grant
    Filed: September 7, 1995
    Date of Patent: May 6, 1997
    Assignee: Thomson-CSF
    Inventors: Philippe Maurel, Jean-Charles Garcia, Jean-Pierre Hirtz
  • Patent number: 5272106
    Abstract: Disclosed is a method for the making of an optoelectronic device such as buried lasers in which the different layers of the device are chiefly made during a single step of epitaxy by means of a removable mechanical mask.
    Type: Grant
    Filed: June 29, 1992
    Date of Patent: December 21, 1993
    Assignee: Thomson-CSF
    Inventors: Jean-Pierre Hirtz, Jean-Charles Garcia, Philippe Maurel
  • Patent number: 5012476
    Abstract: A device for use as a laser includes a component (C) of semiconductor material formed on a substrate (1) having a different lattice parameter. The substrate (1) is covered with a silicon layer (2) which is in turn covered with a matching superlattice (3) on which the component (C) is formed. The device is more particularly applicable to a component formed on diamond.
    Type: Grant
    Filed: January 11, 1989
    Date of Patent: April 30, 1991
    Assignee: Thomson-CSF
    Inventors: Manijeh Razeghi, Martin Defour, Franck Omnes, Philippe Maurel, Robert Blondeau, Michel Krakowski