Abstract: In a device for regenerating a wavelength-division multiplex optical signal, the optical signal to be regenerated comes from an optical fiber and is injected back into the same optical fiber or into another fiber. The device comprises at least one dispersive medium for receiving the wavelength-division multiplex signal and emitting a corresponding dispersed wave into a free space and a saturable absorber which receives the dispersed wave and transmits a corresponding regenerated wave.

Abstract: A reactor for applying reactive ion etching to a component, wherein a substrate holder (3) and clamping means (10) are provided for respectively supporting and securing components (8) to be exposed to reactive ion flux, that includes a separate shield arrangement (20) fixed in a detachable way on said substrate holder (3), above said clamping means (10) to mask said clamping means with respect to said reactive ion flux. Said shield arrangement (20), made up of a single ring can be mounted on said substrate holder (3) directly upon said clamping means or can also be mounted just above it and separated by a small distance from said clamping means (10). The shield arrangement (20) can also made up of at least two rings (22) which are stacked with a small mutual separation, above said clamping means (10). The material of said shield arrangement (20) can be covered with a film of dielectric material and electrically connected to ground (23) through said substrate holder (3).

Abstract: A method of fabricating an optical integrated circuit comprising at least one etched and buried BRS waveguide coupled to at least one etched but not buried ridge waveguide includes defining an imprint for the two types of guide beforehand, using a common mask, and then defining the two types of guide by successive etching operations.

Abstract: The energization current of an indium phosphide or gallium arsenide double channel semiconductor laser is confined within a laser stripe by near and far current blocking arrangements. The near current blocking arrangements are formed by a blocking junction formed in two lateral channels delimiting the stripe. The far current blocking arrangements are formed by an iron-doped semi-insulative layer grown epitaxially before the lateral channels are etched. A particular application is to the fabrication of pump lasers used in optical amplifiers of optical fiber links.