Patents by Inventor Philippe Rodriguez
Philippe Rodriguez has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11698488Abstract: A process for fabricating a heterostructure includes at least one elementary structure made of III-V material on the surface of a silicon-based substrate successively comprising: producing a first pattern having at least a first opening in a dielectric material on the surface of a first silicon-based substrate; a first operation for epitaxy of at least one III-V material so as to define at least one elementary base layer made of III-V material in the at least first opening; producing a second pattern in a dielectric material so as to define at least a second opening having an overlap with the elementary base layer; a second operation for epitaxy of at least one III-V material on the surface of at least the elementary base layer made of III-V material(s) so as to produce the at least elementary structure made of III-V material(s) having an outer face; an operation for transferring and assembling the at least photonic active elementary structure via its outer face, on an interface that may comprise passive elemType: GrantFiled: December 19, 2018Date of Patent: July 11, 2023Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Fabrice Nemouchi, Charles Baudot, Yann Bogumilowicz, Elodie Ghegin, Philippe Rodriguez
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Patent number: 11600740Abstract: A method of forming an opening in an insulating layer covering a semiconductor region including germanium, successively including: the forming of a first masking layer on the insulating layer; the forming on the first masking layer of a second masking layer including an opening; the etching of an opening in the first masking layer, in line with the opening of the second masking layer; the removal of the second masking layer by oxygen-based etching; and the forming of the opening of said insulating layer in line with the opening of the first masking layer, by fluorine-based etching.Type: GrantFiled: August 27, 2020Date of Patent: March 7, 2023Assignee: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Willy Ludurczak, Abdelkader Aliane, Jean-Michel Hartmann, Zouhir Mehrez, Philippe Rodriguez
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Patent number: 11450776Abstract: A method of forming an area of electric contact with a semiconductor region mainly made of germanium, comprising the forming of a first area made of a first intermetallic material where more than 70% of the non-metal atoms are silicon atoms. There is also described a device including such a contacting area.Type: GrantFiled: March 26, 2020Date of Patent: September 20, 2022Assignee: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Willy Ludurczak, Philippe Rodriguez, Jean-Michel Hartmann, Abdelkader Aliane, Zouhir Mehrez
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Publication number: 20220037477Abstract: The invention relates to a method for producing ohmic contacts, of type including a metal, a semiconductor and tin, including: a) forming a first layer (6), of an alloy of the semiconductor and of tin; b) then, on the first layer, forming a second layer (8), of said metal; c) laser annealing the first layer and the second layer at an energy density between 0.1 and 2 J/cm2.Type: ApplicationFiled: July 28, 2021Publication date: February 3, 2022Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Andréa-Carolina QUINTERO COLMENA, Pablo ACOSTA ALBA, Philippe RODRIGUEZ
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Patent number: 11075501Abstract: A process for producing a component includes a structure made of III-V material(s) on the surface of a substrate, the structure comprising at least one upper contact level defined on the surface of a first III-V material and a lower contact level defined on the surface of a second III-V material, comprising: successive operations of encapsulation of the structure with at least one dielectric; making primary apertures in a dielectric for the two contacts; making secondary apertures in a dielectric for the two contacts; at least partial filling of the apertures with at least one metallic material so as to produce upper contact bottom metallization and at least one upper contact pad in contact with the metallization for each of said contacts. A component produced by the process is also provided. The component may be a laser diode.Type: GrantFiled: December 22, 2017Date of Patent: July 27, 2021Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Elodie Ghegin, Christophe Jany, Fabrice Nemouchi, Philippe Rodriguez, Bertrand Szelag
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Publication number: 20210066535Abstract: A method of forming an opening in an insulating layer covering a semiconductor region including germanium, successively including: the forming of a first masking layer on the insulating layer; the forming on the first masking layer of a second masking layer including an opening; the etching of an opening in the first masking layer, in line with the opening of the second masking layer; the removal of the second masking layer by oxygen-based etching; and the forming of the opening of said insulating layer in line with the opening of the first masking layer, by fluorine-based etching.Type: ApplicationFiled: August 27, 2020Publication date: March 4, 2021Applicant: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Willy Ludurczak, Abdelkader Aliane, Jean-Michel Hartmann, Zouhir Mehrez, Philippe Rodriguez
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Publication number: 20200313008Abstract: A method of forming an area of electric contact with a semiconductor region mainly made of germanium, comprising the forming of a first area made of a first intermetallic material where more than 70% of the non-metal atoms are silicon atoms. There is also described a device including such a contacting area.Type: ApplicationFiled: March 26, 2020Publication date: October 1, 2020Applicant: Commissariat à I'Énergie Atomique et aux Énergies AlternativesInventors: Willy Ludurczak, Philippe Rodriguez, Jean-Michel Hartmann, Abdelkader Aliane, Zouhir Mehrez
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Publication number: 20200274321Abstract: A process for producing a component includes a structure made of III-V material(s) on the surface of a substrate, the structure comprising at least one upper contact level defined on the surface of a first III-V material and a lower contact level defined on the surface of a second III-V material, comprising: successive operations of encapsulation of the structure with at least one dielectric; making primary apertures in a dielectric for the two contacts; making secondary apertures in a dielectric for the two contacts; at least partial filling of the apertures with at least one metallic material so as to produce upper contact bottom metallization and at least one upper contact pad in contact with the metallization for each of said contacts. A component produced by the process is also provided. The component may be a laser diode.Type: ApplicationFiled: December 22, 2017Publication date: August 27, 2020Inventors: Elodie GHEGIN, Christophe JANY, Fabrice NEMOUCHI, Philippe RODRIGUEZ, Bertrand SZELAG
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Patent number: 10388653Abstract: A production of contact zones for a transistor device including the steps of: a) forming at least one layer made of a compound based on semiconductor and metal on one or more first semiconductor region(s) of a first N-type transistor and on one or more second semiconductor region(s) of a second P-type transistor resting on a same substrate, the first regions being based on a III-V type material whereas the second semiconductor regions are based on another material different from the III-V material, the semiconductor of the compound being an N-type dopant of the III-V material, b) carrying out at least one thermal annealing so as to form on the first semiconductor regions first contact zones and on the second semiconductor regions second contact zones based on a semiconductor and metal compound while increasing the N-doping of the III-V material.Type: GrantFiled: August 11, 2016Date of Patent: August 20, 2019Assignees: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, STMicroelectronics (Crolles 2) SASInventors: Philippe Rodriguez, Elodie Ghegin, Fabrice Nemouchi
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Patent number: 10361087Abstract: A process for manufacturing an intermetallic contact on the surface of a layer or of a substrate of oriented InxGa1-xAs material, the contact includes an Ni—InGaAs intermetallic compound, the intermetallic compound having a hexagonal crystallographic structure that may have: a first texture or a second texture formed at a second nucleation temperature above the first nucleation temperature; the process comprising the following steps: the production of nomograms defining, for a thickness of Ni deposited, the time to completely consume the initial thickness of Ni as a function of the annealing temperature, the annealing temperature being below the nucleation temperature of the second texture; the localized deposition of Ni on the surface of the InxGa1-xAs material; an annealing step applying the pair of parameters: time required/annealing temperature, deduced from the nomograms, comprising at least one temperature rise step and at least one temperature hold of the final annealing temperature.Type: GrantFiled: June 29, 2018Date of Patent: July 23, 2019Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Philippe Rodriguez, Seifeddine Zhiou, Fabrice Nemouchi, Patrice Gergaud
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Publication number: 20190187375Abstract: A process for fabricating a heterostructure includes at least one elementary structure made of III-V material on the surface of a silicon-based substrate successively comprising: producing a first pattern having at least a first opening in a dielectric material on the surface of a first silicon-based substrate; a first operation for epitaxy of at least one III-V material so as to define at least one elementary base layer made of III-V material in the at least first opening; producing a second pattern in a dielectric material so as to define at least a second opening having an overlap with the elementary base layer; a second operation for epitaxy of at least one III-V material on the surface of at least the elementary base layer made of III-V material(s) so as to produce the at least elementary structure made of III-V material(s) having an outer face; an operation for transferring and assembling the at least photonic active elementary structure via its outer face, on an interface that may comprise passive elemType: ApplicationFiled: December 19, 2018Publication date: June 20, 2019Inventors: Fabrice NEMOUCHI, Charles BAUDOT, Yann BOGUMILOWICZ, Elodie GHEGIN, Philippe RODRIGUEZ
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Publication number: 20190006182Abstract: A process for manufacturing an intermetallic contact on the surface of a layer or of a substrate of oriented InxGa1-xAs material, the contact includes an Ni—InGaAs intermetallic compound, the intermetallic compound having a hexagonal crystallographic structure that may have: a first texture or a second texture formed at a second nucleation temperature above the first nucleation temperature; the process comprising the following steps: the production of nomograms defining, for a thickness of Ni deposited, the time to completely consume the initial thickness of Ni as a function of the annealing temperature, the annealing temperature being below the nucleation temperature of the second texture; the localized deposition of Ni on the surface of the InxGa1-xAs material; an annealing step applying the pair of parameters: time required/annealing temperature, deduced from the nomograms, comprising at least one temperature rise step and at least one temperature hold of the final annealing temperature.Type: ApplicationFiled: June 29, 2018Publication date: January 3, 2019Inventors: Philippe RODRIGUEZ, Seifeddine ZHIOU, Fabrice NEMOUCHI, Patrice GERGAUD
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Patent number: 10068674Abstract: The invention relates to a jet spouted bed reactor, comprising a cylindrical area, a gas injection pipe at the base of the cylindrical area, and a transition area, connecting the upper end of the pipe to the base of the cylindrical area, this transition area having a convex profile in a plane extending through the axis (YY?) of flow of a fluid in the pipe.Type: GrantFiled: June 28, 2012Date of Patent: September 4, 2018Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Meryl Brothier, Dominique Moulinier, Philippe Rodriguez, Carine Ablitzer
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Publication number: 20170062424Abstract: A production of contact zones for a transistor device including the steps of: a) forming at least one layer made of a compound based on semiconductor and metal on one or more first semiconductor region(s) of a first N-type transistor and on one or more second semiconductor region(s) of a second P-type transistor resting on a same substrate, the first regions being based on a III-V type material whereas the second semiconductor regions are based on another material different from the III-V material, the semiconductor of the compound being an N-type dopant of the III-V material, b) carrying out at least one thermal annealing so as to form on the first semiconductor regions first contact zones and on the second semiconductor regions second contact zones based on a semiconductor and metal compound while increasing the N-doping of the III-V material.Type: ApplicationFiled: August 11, 2016Publication date: March 2, 2017Applicants: Commissariat a L'Energie Atomique et aux Energies Alternatives, STMicroelectronics (Crolles 2) SASInventors: Philippe RODRIGUEZ, Elodie GHEGIN, Fabrice NEMOUCHI
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Publication number: 20140193570Abstract: The invention relates to a jet spouted bed reactor, comprising a cylindrical area, a gas injection pipe at the base of the cylindrical area, and a transition area, connecting the upper end of the pipe to the base of the cylindrical area, this transition area having a convex profile in a plane extending through the axis (YY?) of flow of a fluid in the pipe.Type: ApplicationFiled: June 28, 2012Publication date: July 10, 2014Applicant: Commissariat a l'energie atomique et aux energies alternativesInventors: Meryl Brothier, Dominique Moulinier, Philippe Rodriguez, Carine Ablitzer