Patents by Inventor Philippe Rommeveaux

Philippe Rommeveaux has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7737000
    Abstract: The invention relates to the collective fabrication of superposed microstructures, such as an integrated circuit and a protective cover. Individual structures each comprising superposed first and second elements are fabricated collectively. The first elements (for example, integrated circuit chips) are prepared on a first plate and the second elements (for example, transparent covers) are prepared on a second plate. The plates are bonded to each other over the major portion of their facing surfaces, but with no bonding of the defined zones in which there is no adhesion. The individual structures are then diced via the top on the one hand and via the bottom on the other hand along different parallel dicing lines passing through the zones with no adhesion, so that, after dicing, the first elements retain surface portions (those lying between the parallel dicing lines) that are not covered by a second element. A connection pad may thus remain accessible at this point.
    Type: Grant
    Filed: December 8, 2005
    Date of Patent: June 15, 2010
    Assignees: E2V Semiconductors, Tracit Technologies
    Inventors: Philippe Rommeveaux, Bernard Aspar
  • Patent number: 7737518
    Abstract: The invention relates to the fabrication of optical microsystems for miniature cameras or miniature matrix displays. It is proposed that N dot matrix arrays and associated circuits should be collectively fabricated, on the front of a semiconductor wafer, to produce N identical chips, with on the side of each array, external connection lands; a plate, used to collectively form N identical optical image-forming structures, each optical image-forming structure covering a respective chip and being designed to form an overall image corresponding with the whole of the matrix array of the respective chip, is fabricated collectively and placed in close contact with the front of the semiconductor wafer; through the thickness of the wafer, conductive vias extending to the contact lands are opened, and, only after these various operations, the wafer is divided into N individual optical microsystems comprising an electronic chip covered by an optical structure.
    Type: Grant
    Filed: March 10, 2008
    Date of Patent: June 15, 2010
    Assignee: Atmel Grenoble S.A.
    Inventor: Philippe Rommeveaux
  • Publication number: 20090275152
    Abstract: The invention relates to the collective fabrication of superposed microstructures, such as an integrated circuit and a protective cover. Individual structures each comprising superposed first and second elements are fabricated collectively. The first elements (for example, integrated circuit chips) are prepared on a first plate and the second elements (for example, transparent covers) are prepared on a second plate. The plates are bonded to each other over the major portion of their facing surfaces, but with no bonding of the defined zones in which there is no adhesion. The individual structures are then diced via the top on the one hand and via the bottom on the other hand along different parallel dicing lines passing through the zones with no adhesion, so that, after dicing, the first elements retain surface portions (those lying between the parallel dicing lines) that are not covered by a second element. A connection pad may thus remain accessible at this point.
    Type: Application
    Filed: December 8, 2005
    Publication date: November 5, 2009
    Applicants: E2V SEMICONDUCTORS, TRACIT TECHNOLOGIES
    Inventors: Philippe Rommeveaux, Bernard Aspar
  • Patent number: 7407825
    Abstract: The invention relates to the fabrication of optical microsystems for miniature cameras or miniature matrix displays. It is proposed that N dot matrix arrays and associated circuits should be collectively fabricated, on the front of a semiconductor wafer, to produce N identical chips, with on the side of each array, external connection lands; a plate, used to collectively form N identical optical image-forming structures, each optical image-forming structure covering a respective chip and being designed to form an overall image corresponding with the whole of the matrix array of the respective chip, is fabricated collectively and placed in close contact with the front of the semiconductor wafer; through the thickness of the wafer, conductive vias extending to the contact lands are opened, and, only after these various operations, the wafer is divided into N individual optical microsystems comprising an electronic chip covered by an optical structure.
    Type: Grant
    Filed: September 2, 2003
    Date of Patent: August 5, 2008
    Assignee: E2V Semiconductors
    Inventor: Philippe Rommeveaux
  • Publication number: 20080151131
    Abstract: The invention relates to the fabrication of optical microsystems for miniature cameras or miniature matrix displays. It is proposed that N dot matrix arrays and associated circuits should be collectively fabricated, on the front of a semiconductor wafer, to produce N identical chips, with on the side of each array, external connection lands; a plate, used to collectively form N identical optical image-forming structures, each optical image-forming structure covering a respective chip and being designed to form an overall image corresponding with the whole of the matrix array of the respective chip, is fabricated collectively and placed in close contact with the front of the semiconductor wafer; through the thickness of the wafer, conductive vias extending to the contact lands are opened, and, only after these various operations, the wafer is divided into N individual optical microsystems comprising an electronic chip covered by an optical structure.
    Type: Application
    Filed: March 10, 2008
    Publication date: June 26, 2008
    Inventor: Philippe ROMMEVEAUX
  • Patent number: 7217590
    Abstract: The invention relates to very small-sized color image sensors. The sensor according to the invention is made by the following method: the formation, on the front face of the semiconductive wafer (10), of a series of active zones (ZA) comprising image detection circuits and each corresponding to a respective image sensor, each active zone comprising photosensitive zones (12) covered with conductive and insulating layers (14, 16) enabling the collection of electrical charges generated in the photosensitive zones, the transfer of the wafer (10) by its front face against the front face of a supporting substrate (20), the elimination of the major part of the thickness of the semiconductive wafer, leaving a very fine semiconductive layer (30) on the substrate, this fine semiconductive layer comprising the photosensitive zones, the deposition and etching of color filters (18) on the semiconductive layer thus thinned.
    Type: Grant
    Filed: August 30, 2002
    Date of Patent: May 15, 2007
    Assignee: Atmel Grenoble S.A.
    Inventors: Eric Pourquier, Louis Brissot, Gilles Simon, Alain Jutant, Philippe Rommeveaux
  • Publication number: 20070057890
    Abstract: The invention relates to liquid crystal matrix micro displays, and in particular those which are embodied on a monolithic silicon substrate in which are integrated the electronic circuits for control of a matrix array of liquid crystal cells. The matrix comprises, for each dot at the crossover of a row and of a column, an elementary electronic circuit for controlling an elementary liquid crystal cell situated at this crossover. This circuit comprises at least one storage capacitor for storing for the duration of an image frame an analogue voltage applied by the column, a first terminal of the storage capacitor being linked to the gate of the transistor, and, in series between two voltage supply terminals, an elementary current source and a switching transistor, the drain of the switching transistor being linked to the liquid crystal cell. A periodic voltage ramp, common to all the cells of at least one row, is applied to a second terminal of the storage capacitor of the cells of this row.
    Type: Application
    Filed: October 1, 2004
    Publication date: March 15, 2007
    Applicant: ATMEL GRENOBLE S.A.
    Inventors: Francois Ayel, Philippe Rommeveaux
  • Publication number: 20050287690
    Abstract: The invention relates to the fabrication of optical microsystems for miniature cameras or miniature matrix displays. It is proposed that N dot matrix arrays and associated circuits should be collectively fabricated, on the front of a semiconductor wafer, to produce N identical chips, with on the side of each array, external connection lands; a plate, used to collectively form N identical optical image-forming structures, each optical image-forming structure covering a respective chip and being designed to form an overall image corresponding with the whole of the matrix array of the respective chip, is fabricated collectively and placed in close contact with the front of the semiconductor wafer; through the thickness of the wafer, conductive vias extending to the contact lands are opened, and, only after these various operations, the wafer is divided into N individual optical microsystems comprising an electronic chip covered by an optical structure.
    Type: Application
    Filed: September 2, 2003
    Publication date: December 29, 2005
    Applicant: ATMEL GRENOBLE S,A.
    Inventor: Philippe Rommeveaux
  • Patent number: 6972210
    Abstract: The invention relates to the making of color image sensors for miniature cameras. The method of fabrication includes the formation on the front face of a semi-conductive wafer of a series of active zones comprising image detection circuits, each corresponding to a respective image sensor. Each active zone is surrounded by input/output pads. The wafer is transferred by its front fact against the front face of a supporting substrate. The major part of the thickness of the semiconductor wafer is eliminated, leaving a very fine semi-conductive layer including the image detection circuits on the substrate. This method is characterized in that firstly, layers of color filters are deposited and then etched on the semi-conductive layer thus thinned.
    Type: Grant
    Filed: August 30, 2002
    Date of Patent: December 6, 2005
    Assignee: Atmel Grenoble S.A.
    Inventors: Eric Pourquier, Philippe Rommeveaux
  • Publication number: 20040266052
    Abstract: The invention relates to the making of color image sensors for miniature cameras.
    Type: Application
    Filed: February 4, 2004
    Publication date: December 30, 2004
    Inventors: Eric Pourquier, Philippe Rommeveaux
  • Publication number: 20040251477
    Abstract: The invention relates to very small-sized color image sensors.
    Type: Application
    Filed: February 3, 2004
    Publication date: December 16, 2004
    Inventors: Eric Pourquier, Louis Brissot, Gilles Simon, Alain Jutant, Philippe Rommeveaux
  • Patent number: 6288694
    Abstract: The present invention relates to a flat display screen including a light-emitting source organized in a first array of strips generally parallel in a first direction, and at least one second opaque array, interposed between the light-emitting source and a display surface, and organized in a second direction generally non-perpendicular to the first direction, at least one of the arrays exhibiting, along an axis parallel to the general direction of the first array and whatever the position of this axis in a perpendicular direction, a constant proportion of transparent surface for an elementary pattern.
    Type: Grant
    Filed: October 23, 1998
    Date of Patent: September 11, 2001
    Assignee: Pixtech S.A.
    Inventors: Axel Jäger, Philippe Rommeveaux
  • Patent number: 6262529
    Abstract: A display screen which does not have moire effects. The transparency of an intermediate subassembly, through which the observation is made, is substantially constant at the scale of an anode subassembly. The patterns of the intermediate subassemblies have a sufficiently low periodicity in at least one direction. This may be used in the production of display screens with micropoints.
    Type: Grant
    Filed: September 14, 1999
    Date of Patent: July 17, 2001
    Assignees: Commissariat a l'Energie Atomique, Pixtech
    Inventors: Marie-Noëlle Semeria, Philippe Rommeveaux