Patents by Inventor Philippe Spiberg

Philippe Spiberg has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for substrate pretreatment to achieve high-quality III-nitride epitaxy
    Patent number: 8728938
    Abstract: The present invention relates to a method for producing a modified surface of a substrate that stimulates the growth of epitaxial layers of group-III nitride semiconductors with substantially improved structural perfection and surface flatness. The modification is conducted outside or inside a growth reactor by exposing the substrate to a gas-product of the reaction between hydrogen chloride (HCl) and aluminum metal (Al). As a single-step or an essential part of the multi-step pretreatment procedure, the modification gains in coherent coordination between the substrate and group-III nitride epitaxial structure to be deposited. Along with epilayer, total epitaxial structure may include buffer inter-layer to accomplish precise substrate-epilayer coordination.
    Type: Grant
    Filed: June 26, 2012
    Date of Patent: May 20, 2014
    Assignee: Ostendo Technologies, Inc.
    Inventors: Vladimir Ivantsov, Anna Volkova, Lisa Shapovalov, Alexander Syrkin, Philippe Spiberg, Hussein S. El-Ghoroury
  • Growth of planar non-polar {1 -1 0 0} M-plane and semi-polar {1 1 -2 2} gallium nitride with hydride vapor phase epitaxy (HVPE)
    Patent number: 8673074
    Abstract: A method of growing planar non-polar m-plane or semi-polar III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane sapphire substrate, using hydride vapor phase epitaxy (HVPE). The method includes in-situ pretreatment of the substrate at elevated temperatures in an atmosphere of ammonia and argon, growing an intermediate layer such as an aluminum nitride (AlN) or aluminum-gallium nitride (AlGaN) on the annealed substrate, and growing the non-polar m-plane III-Nitride epitaxial layer on the intermediate layer using HVPE.
    Type: Grant
    Filed: July 15, 2009
    Date of Patent: March 18, 2014
    Assignee: Ostendo Technologies, Inc.
    Inventors: Alexander Usikov, Alexander Syrkin, Robert G. W. Brown, Hussein S. El-Ghoroury, Philippe Spiberg, Vladimir Ivantsov, Oleg Kovalenkov, Lisa Shapovalova
  • Growth of planar non-polar {10-10} M-plane gallium nitride with hydride vapor phase epitaxy (HVPE)
    Patent number: 8629065
    Abstract: A method of growing planar non-polar m-plane III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane Sapphire substrate, using hydride vapor phase epitaxy (HVPE). The method includes in-situ pretreatment of the substrate at elevated temperatures in the ambient of ammonia and argon, growing an intermediate layer such as an aluminum nitride (AlN) or aluminum-gallium nitride (AlGaN) on the annealed substrate, and growing the non-polar m-plane III-Nitride epitaxial layer on the intermediate layer using HVPE. Various alternative methods are disclosed.
    Type: Grant
    Filed: November 6, 2009
    Date of Patent: January 14, 2014
    Assignee: Ostendo Technologies, Inc.
    Inventors: Philippe Spiberg, Hussein S. El-Ghoroury, Alexander Usikov, Alexander Syrkin, Bernard Scanlan, Vitali Soukhoveev
  • Method for Substrate Pretreatment To Achieve High-Quality III-Nitride Epitaxy
    Publication number: 20130337639
    Abstract: The present invention relates to a method for producing a modified surface of a substrate that stimulates the growth of epitaxial layers of group-III nitride semiconductors with substantially improved structural perfection and surface flatness. The modification is conducted outside or inside a growth reactor by exposing the substrate to a gas-product of the reaction between hydrogen chloride (HCl) and aluminum metal (Al). As a single-step or an essential part of the multi-step pretreatment procedure, the modification gains in coherent coordination between the substrate and group-III nitride epitaxial structure to be deposited. Along with epilayer, total epitaxial structure may include buffer inter-layer to accomplish precise substrate-epilayer coordination.
    Type: Application
    Filed: June 26, 2012
    Publication date: December 19, 2013
    Applicant: OSTENDO TECHNOLOGIES, INC.
    Inventors: Vladimir Ivantsov, Anna Volkova, Lisa Shapovalov, Alexander Syrkin, Philippe Spiberg, Hussein S. El-Ghoroury
  • Growth of Planar Non-Polar M-Plane Gallium Nitride With Hydride Vapor Phase Epitaxy (HVPE)
    Publication number: 20110108954
    Abstract: A method of growing planar non-polar m-plane III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane Sapphire substrate, using hydride vapor phase epitaxy (HVPE). The method includes in-situ pretreatment of the substrate at elevated temperatures in the ambient of ammonia and argon, growing an intermediate layer such as an aluminum nitride (AlN) or aluminum-gallium nitride (AlGaN) on the annealed substrate, and growing the non-polar m-plane III-Nitride epitaxial layer on the intermediate layer using HVPE. Various alternative methods are disclosed.
    Type: Application
    Filed: November 6, 2009
    Publication date: May 12, 2011
    Applicant: OSTENDO TECHNOLOGIES, INC.
    Inventors: Philippe Spiberg, Hussein S. El-Ghoroury, Alexander Usikov, Alexander Syrkin, Bernard Scanlan, Vitali Soukhoveev
  • Growth of Planar Non-Polar M-Plane and Semi-Polar Gallium Nitride with Hydride Vapor Phase Epitaxy (HVPE)
    Publication number: 20100012948
    Abstract: A method of growing planar non-polar m-plane or semi-polar III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane Sapphire substrate, using hydride vapor phase epitaxy (HVPE). The method includes in-situ pretreatment of the substrate at elevated temperatures in the ambient of ammonia and argon, growing an intermediate layer such as an aluminum nitride (AlN) or aluminum-gallium nitride (AlGaN) on the annealed substrate, and growing the non-polar m-plane III-Nitride epitaxial layer on the intermediate layer using HVPE.
    Type: Application
    Filed: July 15, 2009
    Publication date: January 21, 2010
    Applicant: OSTENDO TECHNOLOGIES, INC.
    Inventors: Alexander Usikov, Alexander Syrkin, Robert G.W. Brown, Hussein S. El-Ghoroury, Philippe Spiberg, Vladimir Ivantsov, Oleg Kovalenkov, Lisa Shapovalova