Abstract: A microtool for embossing structures into a substrate is fastened to an object, such as a press plate, by sintering, preferably pressure sintering. An insight underlying the invention is the fact that such a sintering or pressure sintering method provides a sufficiently reliable, strong, heat conducting and/or dimensionally stable connection, even for a hot embossing process, where at elevated temperatures, pressures of 10-300 bar and tensile forces of up to 100-200 bar may act upon the connection, and where a dimensional stability of down to the micrometer scale may be required. According to a preferred embodiment, the forming temperature of a pressure sintered connection equals the embossing temperature, i.e. the working temperature of the tool.

Abstract: The invention is related to a multi-chip-module and to a method for its manufacture. The module comprises a base carrier, on which at least in some areas signal conductor tracks and signal contact surfaces arranged at least in a single layer are located, and with at least one semiconductor component operating in the signal range and connected with the signal conductor track and signal contact surfaces. The purpose is to achieve a high degree of integration with a multi-chip-module of this type. To do so, in addition at least in some areas on the base carrier power conductor tracks and power contact surfaces arranged in at least one layer are located. Furthermore, at least one power electronics component operating in the power range is provided, which is connected with at least one power conductor track, at least one power contact surface and at least one signal conductor track.

Abstract: For the method for manufacturing electrically conducting structures one produces or prepares an electrically insulating layer so that it has a surface with recesses at the locations at which the electrically conducting structures are to arise. At least some of the recesses, perpendicular to a surface of the substrate, have a cross section in which the aspect ratio (the ratio between depth (t) and width (b) of the structures) is between 1:5 and 5:1, for example at least 2:3. The substrate surface is provided with an electrically conducting layer which is thin in comparison to the characteristic dimensions of the recesses. Subsequently the surface of the substrate is galvanised for so long until the recesses are filled.