Patents by Inventor Philippe Supiot

Philippe Supiot has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for making microchannels on a substrate, and substrate including such microchannels
    Patent number: 8962487
    Abstract: The present invention relates to a process for fabricating microchannels on a substrate and to a substrate comprising these microchannels, the invention being especially applicable to the fabrication of microstructured substrates for microelectronic, microfluidic and/or micromechanical systems. The process includes a step (a) of producing at least one or at least two patterns 2 on the surface of a bottom layer 1 and a step (b) of depositing, on top of the bottom layer and the pattern or patterns, a layer 3 of polymer material obtained by polymerizing an organic or organometallic monomer that contains siloxane functional groups, for example tetramethyldisiloxane, in a plasma-enhanced, optionally remote plasma-enhanced, chemical vapor deposition reactor (PECVD or optionally RPECVD) reactor.
    Type: Grant
    Filed: February 24, 2010
    Date of Patent: February 24, 2015
    Assignee: Universite des Sciences et Technologies de Lille
    Inventors: Abdennour Abbas, Didier Guillochon, Bertrand Bocquet, Philippe Supiot
  • Method for making microchannels on a substrate, and substrate including such microchannels
    Publication number: 20120043649
    Abstract: The present invention relates to a process for fabricating microchannels on a substrate and to a substrate comprising these microchannels, the invention being especially applicable to the fabrication of microstructured substrates for microelectronic, microfluidic and/or micromechanical systems. The process includes a step (a) of producing at least one or at least two patterns 2 on the surface of a bottom layer 1 and a step (b) of depositing, on top of the bottom layer and the pattern or patterns, a layer 3 of polymer material obtained by polymerizing an organic or organometallic monomer that contains siloxane functional groups, for example tetramethyldisiloxane, in a plasma-enhanced, optionally remote plasma-enhanced, chemical vapor deposition reactor (PECVD or optionally RPECVD) reactor.
    Type: Application
    Filed: February 24, 2010
    Publication date: February 23, 2012
    Applicant: UNIVERSITE DES SCIENCES ET TECHNOLOGIES DE LILLE
    Inventors: Abdennour Abbas, Didier Guillochon, Bertrand Bocquet, Philippe Supiot