Abstract: A method of optical and electrical simulation of an optoelectronic device, the surface of which is intended to be illuminated has a texture formed of regular cones, under the effect of the illumination of the surface by an incident light beam having an intensity spectrum determined on the basis of the wavelength, the method being implemented by computer and comprising: modelling the device in the form of a structure for which the illuminated surface is modelled by a planar surface, modelling the incident light beam by: a first light beam inclined relative to the normal to the surface with a first non-zero angle, simulating an angle of incidence of the incident beam on the texture of the surface of the device, and for which the intensity is equal to that of the incident beam.

Abstract: The invention relates to a reflective device for a photovoltaic module formed by a plurality of bifacial photovoltaic cells or rows of said cells spaced apart from one another, each cell having an active front face and an active rear face that can capture photons from incident light rays falling on the front and rear faces. The device comprises at least one reflective module to be placed under the cells substantially in line with the gap(s) separating two adjacent cells or two rows of adjacent cells. The reflective module comprises: a first portion, of which the surfaces that are oriented towards the gap have a first curvature such as to send all or part of the incident photons towards the rear face of the cells; and a second portion mounted on the first portion, of which the surfaces oriented towards the gap have a second curvature such as to send all or part of the incident photons towards the rear face of the cells, the second curvature being different from the first curvature.

Abstract: A method of manufacturing an optical reflector including an alternating stack of at least one first layer of complex refraction index n1 and at least one second layer of complex refraction index n2, in which the first layer includes semiconductor nanocrystals, including the following steps: calculation of the total number of layers of the stack, of the thicknesses of each of the layers and of the values of complex refraction indices n1 and n2 on the basis of the characteristics of a desired spectral reflectivity window of the optical reflector, including the use of an optical transfer matrices calculation method; calculation of deposition and annealing parameters of the layers on the basis of the total number of layers and of the values of previously calculated complex refraction indices n1 and n2; deposition and annealing of the layers in accordance with the previously calculated parameters.

Abstract: The present invention relates to a method for forming, on the surface of one of the sides of a silicon substrate, a fibrous layer having a mean lattice pitch of no more than 2 ?m, without requiring soaking. The invention also relates to devices, in particular photovoltaic cells, comprising a silicon substrate produced by means of such a method.

Abstract: A light concentration device includes: a plate including two principal faces and an edge between the two principal faces, a refractive index gradient existing between the two principal faces, and a diffraction grating functioning in reflection or semi-reflection that cooperates with one of the principal faces of the plate having the highest refractive index, the principal face having the lowest refractive index forming a front entry face for the light, at least one exit zone for the light being disposed on the edge.

Abstract: The invention relates to a photovoltaic module comprising a plurality of photovoltaic cells electrically connected in series via connection means comprising electrical conductors. Each connection means comprises an optical device having a reflection-diffractive or transmission-diffractive optical behaviour, and each connection means consists of a sheet formed from a material transparent to incident rays containing at least one network of electrical conductor wires.

Abstract: The invention relates to a photovoltaic cell (1) which includes at least one wafer (2) of a semi-conductor material, with a front surface (21) intended for receiving incident light and a back surface (22) opposite said front surface, as well as to methods for manufacturing said photovoltaic cell. The back surface (22) includes an electric contact (32) and a structure (4), referred to as an optical structure, which is discrete and capable of redirecting the incident light towards the core of the wafer.

Abstract: A method of manufacturing an optical reflector including an alternating stack of at least one first layer of complex refraction index n1 and at least one second layer of complex refraction index n2, in which the first layer includes semiconductor nanocrystals, including the following steps: calculation of the total number of layers of the stack, of the thicknesses of each of the layers and of the values of complex refraction indices n1 and n2 on the basis of the characteristics of a desired spectral reflectivity window of the optical reflector, including the use of an optical transfer matrices calculation method; calculation of deposition and annealing parameters of the layers on the basis of the total number of layers and of the values of previously calculated complex refraction indices n1 and n2; deposition and annealing of the layers in accordance with the previously calculated parameters.

Abstract: The invention relates to a reflective device for a photovoltaic module formed by a plurality of bifacial photovoltaic cells or rows of said cells spaced apart from one another, each cell having an active front face and an active rear face that can capture photons from incident light rays falling on the front and rear faces. The device comprises at least one reflective module to be placed under the cells substantially in line with the gap(s) separating two adjacent cells or two rows of adjacent cells. The reflective module comprises: a first portion, of which the surfaces that are oriented towards the gap have a first curvature such as to send all or part of the incident photons towards the rear face of the cells; and a second portion mounted on the first portion, of which the surfaces oriented towards the gap have a second curvature such as to send all or part of the incident photons towards the rear face of the cells, the second curvature being different from the first curvature.

Abstract: A first circuit element, which is reflective, is formed. A first layer, which is attenuating, is formed. above the first circuit element. A second layer, which is transparent, is formed above the first layer to fill an aperture in the first layer. An overlying lithography resist layer is then exposed to a radiation flux level below a development threshold but high enough that a sum of the radiation flux level and a reflected secondary radiation flux level exceeds the development threshold. The lithography resist layer is developed so as to obtain a mask having an opening through which the first and second layers are removed to form a second aperture which is filled to form a second circuit element.

Abstract: A light concentration device includes: a plate including two principal faces and an edge between the two principal faces, a refractive index gradient existing between the two principal faces, and a diffraction grating functioning in reflection or semi-reflection that cooperates with one of the principal faces of the plate having the highest refractive index, the principal face having the lowest refractive index forming a front entry face for the light, at least one exit zone for the light being disposed on the edge.

Abstract: An integrated electronic circuit includes a cavity buried in a substrate. A surface of the substrate has a depression aligned above the buried cavity. The depression is filled with a material selected so that reflection of a lithography radiation on the substrate surface is attenuated. A resist layer is deposited on the circuit and then exposed to the radiation so that those resist portions which are located above the depression and those located away from the depression receive amounts of radiation that are below and above, respectively, the development threshold of the resist. An etching mask is therefore obtained on the circuit, which is aligned with respect to the cavity and its associated surface depression.

Abstract: An integrated electronic circuit includes a cavity buried in a substrate. A surface of the substrate has a depression aligned above the buried cavity. The depression is filled with a material selected so that reflection of a lithography radiation on the substrate surface is attenuated. A resist layer is deposited on the circuit and then exposed to the radiation so that those resist portions which are located above the depression and those located away from the depression receive amounts of radiation that are below and above, respectively, the development threshold of the resist. An etching mask is therefore obtained on the circuit, which is aligned with respect to the cavity and its associated surface depression.

Abstract: A method is presented for forming two superposed elements within an integrated electronic circuit. In accordance with the method, a first circuit element, which is reflective with respect to lithography radiation, is formed. A first layer, which is attenuating with respect to lithography radiation, is formed above the first circuit element and includes a first aperture exposing at least a portion of the first circuit element. A second layer, which is transparent with respect to lithography radiation, is formed above the first layer to fill the aperture. A lithography resist layer is then deposited above the second layer and exposed to a radiation flux level below a development threshold of the lithography resist layer but high enough that a sum of the radiation flux level and a secondary radiation flux level reflected from the first circuit element exceeds the development threshold of the lithography resist layer.

Abstract: This invention relates to an insolation mask including a transparent substrate (100) and at least one absorber/phase shifter element (112) embedded in the substrate, so as to form a monolithic assembly with the substrate. Application to photolithography.

Abstract: The invention concerns an ultrahigh frequency emitting device, having: at least a first and a second microlaser (22, 24), emitting at two different frequencies &ohgr;1 and &ohgr;2, means of slaving the first and the second microlaser frequency-wise, an array of N elements (N≧2) (52, 54, 56, 58) placed on the path of the beam of the second laser, each element making it possible to impose a phase delay on the beam which passes through it, N means (26, 28, 30, 32) for mixing the beam emitted by the first laser and each of the N delayed beams, and for producing N signals of frequency &ohgr;1-&ohgr;2, N antenna-forming means (34, 36, 38, 40) for emitting radiation at the frequency &ohgr;1-&ohgr;2.

Abstract: The invention relates to a microlaser cavity (10) having:a solid active medium (2) emitting at least in a wavelength range between 1.5 and 1.6 .mu.m, anda saturable absorber (4) of formula CaF.sub.2 :Co.sup.2+ or MgF.sub.2 :Co.sup.2+ or SrF.sub.2 :Co.sup.2+ or BaF.sub.2 :Co.sup.2+ or La.sub.0.9 Mg.sub.0.5-x Co.sub.x Al.sub.11.433 O.sub.19 or YAlO.sub.3 :Co.sup.2+ (or YAl.sub.5-2x Co.sub.x Si.sub.x O.sub.3) or Y.sub.3 Al.sub.5-x-y Ga.sub.x Sc.sub.y O.sub.12 :Co.sup.2+ (or .sub.-3 Al.sub.5-x-y2z Ga.sub.x Sc.sub.y Co.sub.z Si.sub.z O.sub.12) or Y.sub.3-x Lu.sub.x Al.sub.5 O.sub.12 Co.sup.2+ (or Y.sub.3-x Lu.sub.x Al.sub.5-2y Co.sub.y Si.sub.y O.sub.3) or Sr.sub.1-x Mg.sub.x La.sub.y Al.sub.12-y O.sub.12 :Co.sup.2+ (or Sr.sub.1-x Mg.sub.x-y Co.sub.y La.sub.z Al.sub.12-z O.sub.12, with o<y<x).

Abstract: A microlaser having input and output mirrors defining a microlaser cavity, a solid active dielectric medium disposed in the microlaser cavity, and a pumping mechanism which pumps the microlaser and which includes at least one vertical cavity semiconductor laser. The microlaser may also include a microoptical focusing device, passive and/or active cavity switches. A plurality of such microlasers can be assembled to form a bidimensional network.

Abstract: The invention relates to a microlaser cavity switched with the aid of an electrooptical material (54). Electrodes (84, 86) are produced on support elements (80, 82) and the latter are then applied on either side of the electrooptical element. Solid electrodes can also be applied on either side of the electrooptical material.

Abstract: The invention relates to a microlaser cavity (10) having: a solid active medium (2) emitting at least in a wavelength range between 1.5 and 1.6 &mgr;m, and a saturable absorber (4) of formula CaF2:Co2+ or MgF2:Co2+ or SrF2:Co2+ or BaF2:Co2+ or La0.9Mg0.5-xCoxAl11.433O19 or YalO3:Co2+ (or YAl5-2xCoxSixO3 YAl(1-2x)CoxSixO3) or Y3Al5-x-yGaxScyO12:Co2+ (or -3Al5-x-y2zGaxScyCozSizO12 Y3Al5-x-y-2zGaxScyCozSizO12) or Y3-xLuxAl5O12:Co2+ (or Y3-xLuxAl5-2yCoySiyO3) or Sr1-xMgxLayAl12-yO12:Co2+ (or Sr1-xMgx-yCoyLazAl12-zO12, with 0<y<x) Sr1-xLaxMgxAl12-xO19:Co2+ (or Sr1-xLaxMgx-yCoyAl12-xO19 , with 0<y<x).